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EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.

EEPROM

Available Parts 850

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
XC17S100APD8C by Xilinx

XC17S100APD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Finish: Tin/Lead (Sn85Pb15);

COMMON

R-PDIP-T8

e0

9.3599 mm

781216 bit

CONFIGURATION MEMORY

1

1

1

8

781216 words

781216

SYNCHRONOUS

70 Cel

0 Cel

781216X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S100APD8I by Xilinx

XC17S100APD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Supply Current: 15 mA;

COMMON

R-PDIP-T8

e0

9.3599 mm

781216 bit

CONFIGURATION MEMORY

1

1

1

8

781216 words

781216

SYNCHRONOUS

85 Cel

-40 Cel

781216X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S100ASO20C by Xilinx

XC17S100ASO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Supply Current: 15 mA;

COMMON

R-PDSO-G20

e0

12.8 mm

781216 bit

CONFIGURATION MEMORY

1

3

1

20

781216 words

781216

SYNCHRONOUS

70 Cel

0 Cel

781216X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S100ASO20I by Xilinx

XC17S100ASO20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Width: 7.5 mm;

COMMON

R-PDSO-G20

e0

12.8 mm

781216 bit

CONFIGURATION MEMORY

1

3

1

20

781216 words

781216

SYNCHRONOUS

85 Cel

-40 Cel

781216X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S100AVO8C by Xilinx

XC17S100AVO8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Width: 3.9 mm;

COMMON

R-PDSO-G8

e0

4.9 mm

781216 bit

CONFIGURATION MEMORY

1

3

1

8

781216 words

781216

SYNCHRONOUS

70 Cel

0 Cel

781216X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S100AVO8I by Xilinx

XC17S100AVO8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Memory Density: 781216 bit;

COMMON

R-PDSO-G8

e0

4.9 mm

781216 bit

CONFIGURATION MEMORY

1

3

1

8

781216 words

781216

SYNCHRONOUS

85 Cel

-40 Cel

781216X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S150APD8C by Xilinx

XC17S150APD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-609 Code: e0;

COMMON

R-PDIP-T8

e0

9.3599 mm

1040096 bit

CONFIGURATION MEMORY

1

1

1

8

1040096 words

1040096

SYNCHRONOUS

70 Cel

0 Cel

1040096X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S150APD8I by Xilinx

XC17S150APD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

COMMON

R-PDIP-T8

e0

9.3599 mm

1040096 bit

CONFIGURATION MEMORY

1

1

1

8

1040096 words

1040096

SYNCHRONOUS

85 Cel

-40 Cel

1040096X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S150ASO20C by Xilinx

XC17S150ASO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

COMMON

R-PDSO-G20

e0

12.8 mm

1040096 bit

CONFIGURATION MEMORY

1

3

1

20

1040096 words

1040096

SYNCHRONOUS

70 Cel

0 Cel

1040096X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S150ASO20I by Xilinx

XC17S150ASO20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; No. of Words Code: 1040096;

COMMON

R-PDSO-G20

e0

12.8 mm

1040096 bit

CONFIGURATION MEMORY

1

3

1

20

1040096 words

1040096

SYNCHRONOUS

85 Cel

-40 Cel

1040096X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S150AVO8C by Xilinx

XC17S150AVO8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Memory Width: 1;

COMMON

R-PDSO-G8

e0

4.9 mm

1040096 bit

CONFIGURATION MEMORY

1

3

1

8

1040096 words

1040096

SYNCHRONOUS

70 Cel

0 Cel

1040096X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S15APD8C by Xilinx

XC17S15APD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Package Equivalence Code: DIP8,.3;

COMMON

R-PDIP-T8

e0

9.3599 mm

197696 bit

CONFIGURATION MEMORY

1

1

1

8

197696 words

197696

SYNCHRONOUS

70 Cel

0 Cel

197696X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S15APD8I by Xilinx

XC17S15APD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-609 Code: e0;

COMMON

R-PDIP-T8

e0

9.3599 mm

197696 bit

CONFIGURATION MEMORY

1

1

1

8

197696 words

197696

SYNCHRONOUS

85 Cel

-40 Cel

197696X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S15ASO20C by Xilinx

XC17S15ASO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Organization: 197696X1;

COMMON

R-PDSO-G20

e0

12.8 mm

197696 bit

CONFIGURATION MEMORY

1

3

1

20

197696 words

197696

SYNCHRONOUS

70 Cel

0 Cel

197696X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S15AVO8C by Xilinx

XC17S15AVO8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL;

COMMON

R-PDSO-G8

e0

4.9 mm

197696 bit

CONFIGURATION MEMORY

1

3

1

8

197696 words

197696

SYNCHRONOUS

70 Cel

0 Cel

197696X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S15AVO8I by Xilinx

XC17S15AVO8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Input/Output Type: COMMON;

COMMON

R-PDSO-G8

e0

4.9 mm

197696 bit

CONFIGURATION MEMORY

1

3

1

8

197696 words

197696

SYNCHRONOUS

85 Cel

-40 Cel

197696X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S200APD8C by Xilinx

XC17S200APD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Width: 7.62 mm;

COMMON

R-PDIP-T8

e0

9.3599 mm

1335840 bit

CONFIGURATION MEMORY

1

1

1

8

1335840 words

1335840

SYNCHRONOUS

70 Cel

0 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S200APD8I by Xilinx

XC17S200APD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Package Style (Meter): IN-LINE;

COMMON

R-PDIP-T8

e0

9.3599 mm

1335840 bit

CONFIGURATION MEMORY

1

1

1

8

1335840 words

1335840

SYNCHRONOUS

85 Cel

-40 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S200AVO8C by Xilinx

XC17S200AVO8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Standby Current: .001 Amp;

COMMON

R-PDSO-G8

e0

4.9 mm

1335840 bit

CONFIGURATION MEMORY

1

3

1

8

1335840 words

1335840

SYNCHRONOUS

70 Cel

0 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S200AVO8I by Xilinx

XC17S200AVO8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

COMMON

R-PDSO-G8

e0

4.9 mm

1335840 bit

CONFIGURATION MEMORY

1

3

1

8

1335840 words

1335840

SYNCHRONOUS

85 Cel

-40 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S200AVQ44C by Xilinx

XC17S200AVQ44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Memory Density: 1335840 bit;

COMMON

S-PQFP-G44

e0

10 mm

1335840 bit

CONFIGURATION MEMORY

1

3

1

44

1335840 words

1335840

SYNCHRONOUS

70 Cel

0 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

SERIAL

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

10 mm

XC17S30APD8C by Xilinx

XC17S30APD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Form: THROUGH-HOLE;

COMMON

R-PDIP-T8

e0

9.3599 mm

336768 bit

CONFIGURATION MEMORY

1

1

1

8

336768 words

336768

SYNCHRONOUS

70 Cel

0 Cel

336768X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30APD8I by Xilinx

XC17S30APD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Package Style (Meter): IN-LINE;

COMMON

R-PDIP-T8

e0

9.3599 mm

336768 bit

CONFIGURATION MEMORY

1

1

1

8

336768 words

336768

SYNCHRONOUS

85 Cel

-40 Cel

336768X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30ASO20C by Xilinx

XC17S30ASO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 3 V;

COMMON

R-PDSO-G20

e0

12.8 mm

336768 bit

CONFIGURATION MEMORY

1

3

1

20

336768 words

336768

SYNCHRONOUS

70 Cel

0 Cel

336768X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S30ASO20I by Xilinx

XC17S30ASO20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; JESD-609 Code: e0;

COMMON

R-PDSO-G20

e0

12.8 mm

336768 bit

CONFIGURATION MEMORY

1

3

1

20

336768 words

336768

SYNCHRONOUS

85 Cel

-40 Cel

336768X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S30AVO8C by Xilinx

XC17S30AVO8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

COMMON

R-PDSO-G8

e0

4.9 mm

336768 bit

CONFIGURATION MEMORY

1

3

1

8

336768 words

336768

SYNCHRONOUS

70 Cel

0 Cel

336768X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S30AVO8I by Xilinx

XC17S30AVO8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

COMMON

R-PDSO-G8

e0

4.9 mm

336768 bit

CONFIGURATION MEMORY

1

3

1

8

336768 words

336768

SYNCHRONOUS

85 Cel

-40 Cel

336768X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S50APD8C by Xilinx

XC17S50APD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Position: DUAL;

COMMON

R-PDIP-T8

e0

9.3599 mm

559200 bit

CONFIGURATION MEMORY

1

1

1

8

559200 words

559200

SYNCHRONOUS

70 Cel

0 Cel

559200X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S50APD8I by Xilinx

XC17S50APD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

COMMON

R-PDIP-T8

e0

9.3599 mm

559200 bit

CONFIGURATION MEMORY

1

1

1

8

559200 words

559200

SYNCHRONOUS

85 Cel

-40 Cel

559200X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S50ASO20C by Xilinx

XC17S50ASO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G20;

COMMON

R-PDSO-G20

e0

12.8 mm

559200 bit

CONFIGURATION MEMORY

1

3

1

20

559200 words

559200

SYNCHRONOUS

70 Cel

0 Cel

559200X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S50ASO20I by Xilinx

XC17S50ASO20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Package Equivalence Code: SOP20,.4;

COMMON

R-PDSO-G20

e0

12.8 mm

559200 bit

CONFIGURATION MEMORY

1

3

1

20

559200 words

559200

SYNCHRONOUS

85 Cel

-40 Cel

559200X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S50AVO8C by Xilinx

XC17S50AVO8C

Xilinx

The Xilinx XC17S50AVO8C is a 3.3V EEPROM with 559200-bit memory density, operating in synchronous mode. It features a small outline package and Gull Wing terminals, suitable for configuration memory applications. With a max temperature of 70°C, it offers 3-STATE output characteristics and consumes up to 15mA supply current.

COMMON

R-PDSO-G8

e0

4.9 mm

559200 bit

CONFIGURATION MEMORY

1

3

1

8

559200 words

559200

SYNCHRONOUS

70 Cel

0 Cel

559200X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S50AVO8I by Xilinx

XC17S50AVO8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

COMMON

R-PDSO-G8

e0

4.9 mm

559200 bit

CONFIGURATION MEMORY

1

3

1

8

559200 words

559200

SYNCHRONOUS

85 Cel

-40 Cel

559200X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

M24128S-FCU6T/T by STMicroelectronics

M24128S-FCU6T/T

STMicroelectronics

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 4; Package Code: VFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

1 MHz

S-PBGA-B4

.833 mm

131072 bit

EEPROM

8

1

4

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

.3 mm

I2C

5.5 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.4 mm

BOTTOM

NOT SPECIFIED

.833 mm

5 ms

M24256-BWMW6T by STMicroelectronics

M24256-BWMW6T

STMicroelectronics

M24256-BWMW6T by STMicroelectronics is a 32KX8 EEPROM with synchronous operation and I2C control byte. It has 262144 bit memory density, 100000 write/erase cycles endurance, and operates at -40 to 85 °C. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

40

100000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

5.3 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

2.03 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

5.25 mm

5 ms

HARDWARE

24VL014/SN by Microchip Technology

24VL014/SN

Microchip Technology

24VL014/SN by Microchip Tech is an EEPROM with 128x8 organization, operating at 2.5V, and featuring I2C control byte 1010DDDR. It has a max clock frequency of 0.4 MHz and is ideal for applications requiring low power consumption and small footprint in automotive electronics.

1.5V TO 1.8V @ 0.1MHz

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

1024 bit

EEPROM

8

1

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-20 Cel

128X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8/3.3

2.5

Not Qualified

TS 16949

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

3.6 V

1.8 V

2.5

YES

CMOS

OTHER

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

M95M01-RMW6G by STMicroelectronics

M95M01-RMW6G

STMicroelectronics

M95M01-RMW6G by STMicroelectronics is an EEPROM with 128KX8 organization, SPI serial bus type, and 1.27 mm terminal pitch. It operates at a max clock frequency of 5 MHz and has a memory density of 1048576 bit. Ideal for industrial applications requiring reliable non-volatile memory storage.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e3

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

2.5 mm

SPI

.000003 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

30

5.62 mm

5 ms

HARDWARE/SOFTWARE

M95M01-RMW6TG by STMicroelectronics

M95M01-RMW6TG

STMicroelectronics

M95M01-RMW6TG by STMicroelectronics is an EEPROM with 128KX8 organization, SPI serial bus type, and 1000000 write/erase cycles endurance. It operates at a max clock frequency of 5 MHz and has a memory density of 1048576 bit. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e3

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

2.5 mm

SPI

.000003 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

5.62 mm

5 ms

HARDWARE/SOFTWARE

M24C32-WBN6P by STMicroelectronics

M24C32-WBN6P

STMicroelectronics

STMicroelectronics M24C32-WBN6P is an EEPROM with 4Kx8 organization, operating at 2.7V, and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz and is suitable for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.27 mm

32768 bit

EEPROM

8

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

AEC-Q100

5.33 mm

I2C

.000002 Amp

EEPROMs

5 mA

5.5 V

2.5 V

2.7

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

DS28E04S-100 by Maxim Integrated

DS28E04S-100

Maxim Integrated

DS28E04S-100 by Maxim Integrated is a 4Kx1 EEPROM with 50000 cycles endurance. Operating at 3V, it supports parallel/serial modes and uses a 1-Wire serial bus. Ideal for industrial applications requiring reliable non-volatile memory in a small outline package.

50000 Write/Erase Cycles

R-PDSO-G16

e0

9.9 mm

4096 bit

EEPROM

1

1

16

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX1

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

3/5

Not Qualified

1.75 mm

1-WIRE

EEPROMs

5.25 V

2.8 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

24LC024-I/STG by Microchip Technology

24LC024-I/STG

Microchip Technology

24LC024-I/STG by Microchip Tech is an EEPROM with 256x8 organization, operating at 4.5V. It has a max clock frequency of 0.4 MHz and can endure 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.4 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

24LC04B-I/SNG by Microchip Technology

24LC04B-I/SNG

Microchip Technology

24LC04B-I/SNG by Microchip Technology is a 4096-bit EEPROM with 512x8 organization, operating at 5V. It features I2C control byte, hardware write protection, and endurance of 1M cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in compact form factor.

.4 MHz

200

1000000 Write/Erase Cycles

1010XXMR

R-PDSO-G8

e3

4.9 mm

4096 bit

EEPROM

8

3

1

1

5

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

TS 16949

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

24LC04BT-E/SNG by Microchip Technology

24LC04BT-E/SNG

Microchip Technology

24LC04BT-E/SNG by Microchip Technology is a 512x8 EEPROM with I2C control byte. Operating at 5V, it offers 1000000 write/erase cycles and endurance of 200s. Ideal for automotive applications due to its TS16949 screening level and -40 to 125°C temperature range.

.4 MHz

200

1000000 Write/Erase Cycles

1010XXMR

R-PDSO-G8

e3

4.9 mm

4096 bit

EEPROM

8

3

1

1

5

512 words

512

SYNCHRONOUS

125 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

TS 16949

1.75 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

M24C32-FDW5TP by STMicroelectronics

M24C32-FDW5TP

STMicroelectronics

M24C32-FDW5TP by STMicroelectronics is a 32Kb EEPROM with I2C interface, ideal for automotive applications due to its AEC-Q100 screening. It operates at 1.8-5.5V and features a max clock frequency of 400kHz, ensuring efficient data handling. With a robust endurance of 1M write/erase cycles, it's perfect for reliable memory storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.4 mm

32768 bit

EEPROM

8

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-20 Cel

4KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

1.8/5

Not Qualified

AEC-Q100

1.2 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

M24C64-FDW5TP by STMicroelectronics

M24C64-FDW5TP

STMicroelectronics

M24C64-FDW5TP by STMicroelectronics is a 64Kb EEPROM with I2C interface, ideal for low-power applications. It operates at 1.8-5.5V, features a max clock frequency of 400kHz, and supports up to 1M write/erase cycles. Its compact design suits space-constrained devices.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.4 mm

65536 bit

EEPROM

8

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-20 Cel

8KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

1.8/5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

24AA128-I/SNG by Microchip Technology

24AA128-I/SNG

Microchip Technology

24AA128-I/SNG by Microchip Technology is an EEPROM with 16KX8 organization, I2C control byte of 1010DDDR, and max clock frequency of 0.4 MHz. It is used in industrial applications for storing data securely with features like hardware write protection and endurance of 1000000 Write/Erase Cycles.

1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

131072 bit

EEPROM

8

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

24AA64T-I/SNG by Microchip Technology

24AA64T-I/SNG

Microchip Technology

24AA64T-I/SNG by Microchip Technology is an 8KX8 EEPROM with I2C control byte. Operating at 2.5V, it offers 1000000 write/erase cycles and has a memory density of 65536 bits. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

65536 bit

EEPROM

8

3

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

24LC128-I/PG by Microchip Technology

24LC128-I/PG

Microchip Technology

24LC128-I/PG by Microchip Technology is a CMOS EEPROM with a memory density of 131072 bits. It operates in synchronous mode and has a max clock frequency of 0.4 MHz. This EEPROM is commonly used for industrial applications requiring reliable data storage and retrieval.

1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.271 mm

131072 bit

EEPROM

8

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.334 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE