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M24C32-FDW5TP

STMicroelectronics

M24C32-FDW5TP by STMicroelectronics

M24C32-FDW5TP by STMicroelectronics is a 32Kb EEPROM with I2C interface, ideal for automotive applications due to its AEC-Q100 screening. It operates at 1.8-5.5V and features a max clock frequency of 400kHz, ensuring efficient data handling. With a robust endurance of 1M write/erase cycles, it's perfect for reliable memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,123 parts In-Stock

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Digiode

USA . 3,008 parts In-Stock

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3,008

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Anansix

USA . 1,504 parts In-Stock

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1,504

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 636 parts In-Stock

1+ parts

$2.718

100+ parts

-

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$2.446

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636

$2.718

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Microchip USA

USA . 470 parts In-Stock

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$4.227

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470

$4.227

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MKK Technologies

India . 1,176 parts In-Stock

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$5.110

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$5.110

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DigiPath Technology Company

USA . 1,176 parts In-Stock

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$5.110

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$5.110

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AZTECH Wire

Italy . 1,016 parts In-Stock

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$17.000

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1,016

$17.000

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Perfect Parts

USA . 15,154 parts In-Stock

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Kepictronics

USA . 3,739 parts In-Stock

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3,739

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Corphita

USA . 3,624 parts In-Stock

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3,624

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Parana Technologies

USA . 1,947 parts In-Stock

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$3.249

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1,947

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$3.249

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Overview

Unlock the power of reliable data storage with the M24C32-FDW5TP EEPROM from STMicroelectronics. Renowned for their commitment to quality, STMicroelectronics ensures superior performance and longevity, making this small yet mighty component ideal for automotive applications and consumer electronics. With its low power consumption, robust endurance, and space-saving design, you gain peace of mind and efficiency—perfect for innovative projects that demand top-tier performance without compromise!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material enhances the reliability and longevity of the EEPROM in various applications.

Surface Mount: YES

Surface mount technology allows for compact and efficient PCB design, making it suitable for space-constrained applications.

Screening Level: AEC-Q100

Meeting AEC-Q100 standards ensures that the product is reliable and suitable for automotive applications.

Package Shape: RECTANGULAR

Rectangular packaging optimizes space on PCBs and facilitates easier integration into various designs.

Operating Mode: SYNCHRONOUS

Synchronous operation improves data transfer efficiency, resulting in faster communication speeds.

Nominal Supply Voltage / Vsup (V): 1.8

Low voltage operation reduces power consumption, making it ideal for battery-powered devices.

Power Supplies (V): 1.8/5

Dual supply voltage options provide flexibility in design and integration with other components.

No. of Terminals: 8

A compact terminal design allows for simpler connections and integration into PCB layouts.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Thin profile design is excellent for modern compact devices, allowing for high-density component placement.

Maximum Operating Temperature: 85 °C

High operational temperature rating means the EEPROM can function in a wide range of environments.

Organization: 4KX8

An organized memory structure optimizes data handling and storage efficiency.

Minimum Operating Temperature: -20 °C

Low minimum operating temperature expands the range of applications in adverse conditions.

Terminal Finish: TIN LEAD

Tin-lead terminal finish offers good solderability and conductivity, ensuring reliable connections.

I2C Control Byte: 1010DDDR

The I2C control interface provides a simple and efficient communication protocol for diverse applications.

Terminal Position: DUAL

Dual terminal position assists in better routing options on PCB layouts for improved design flexibility.

Write Protection: HARDWARE

Hardware write protection feature enhances data integrity and security against accidental changes.

Maximum Seated Height: 1.2 mm

Compact height improves compatibility with low-profile device designs.

Maximum Clock Frequency (fCLK): 0.4 MHz

Adequate clock frequency for many applications allows for satisfactory data transfer rates.

Width: 3 mm

Slim width allows for dense PCB layouts, essential for modern electronics.

Minimum Supply Voltage (Vsup): 1.7 V

Operating at a lower supply voltage improves efficiency and reduces overall power consumption.

Length: 4.4 mm

Short length contributes to the compact design, making it ideal for small electronic devices.

Technology: CMOS

CMOS technology provides low power consumption and high-speed operation, suitable for a range of applications.

Parallel or Serial: SERIAL

Serial communication simplifies wiring and reduces PCB space usage compared to parallel alternatives.

Terminal Form: GULL WING

Gull wing terminals enable easy soldering and efficient assembly processes.

Maximum Supply Current: 5 mA

Relatively low supply current requirement aids in energy-efficient designs, especially important in battery-operated devices.

No. of Words: 4096 words

Offers sufficient memory capacity for storing a variety of data in embedded applications.

Memory Width: 8

8-bit memory width supports standard data sizes and efficient data handling in applications.

Minimum Data Retention Time: 40

Ensures long-term data validity, crucial for applications where data loss cannot be tolerated.

Terminal Pitch: 0.65 mm

The 0.65 mm pitch is compatible with various PCB designs and components, making it versatile.

No. of Words Code: 4K

4K word code provides a manageable memory size that strikes a balance between space and usability.

Maximum Supply Voltage (Vsup): 5.5 V

Higher supply voltage capability allows compatibility with a wider range of devices and systems.

Endurance: 1000000 Write/Erase Cycles

High endurance rating ensures reliability and longevity, even in write-intensive applications.

Serial Bus Type: I2C

The I2C interface standard simplifies integration with multiple devices and reduces design complexity.

Maximum Write Cycle Time (tWC): 5 ms

Quick write cycle time enhances overall system performance by reducing latency during write operations.

Memory Density: 32768 bit

Sufficient memory density for various applications, supporting efficient data storage for embedded systems.

Memory IC Type: EEPROM

As an EEPROM, it provides non-volatile data storage capabilities, maintaining integrity even during power loss.

Maximum Standby Current: 0.000001 Amp

Extremely low standby current helps conserve battery life, making it ideal for portable devices.

Technical Specifications

EEPROM M24C32-FDW5TP attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.4 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

4KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

1.8/5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

M24C32-FDW5TP Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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