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24AA128-I/SNG

Microchip Technology

24AA128-I/SNG by Microchip Technology

24AA128-I/SNG by Microchip Technology is an EEPROM with 16KX8 organization, I2C control byte of 1010DDDR, and max clock frequency of 0.4 MHz. It is used in industrial applications for storing data securely with features like hardware write protection and endurance of 1000000 Write/Erase Cycles.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 3,296 parts In-Stock

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VNN

France . 812 parts In-Stock

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Nova Conductors

Japan . 62 parts In-Stock

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Corohmni

South Africa . 31 parts In-Stock

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$2.738

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31

$2.738

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Aztec Data Supply Inc.

USA . 300 parts In-Stock

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$4.870

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300

$4.870

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AZTECH Wire

Italy . 892 parts In-Stock

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$9.360

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Ampacity Inc.

Singapore . 910 parts In-Stock

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$13.000

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910

$13.000

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Semicontronic

India . 908 parts In-Stock

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$20.000

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$19.500

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$19.400

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908

$20.000

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$19.400

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LMD Electronica

Estonia . 8,333 parts In-Stock

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Ledger Components

France . 7,939 parts In-Stock

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NIA Electronics

USA . 3,834 parts In-Stock

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Montano Global Distributors

Canada . 3,423 parts In-Stock

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Continental Prestige Electronics

USA . 2,779 parts In-Stock

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LOOK Integrated Logistics

Peru . 2,410 parts In-Stock

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Argo Parts USA

USA . 1,656 parts In-Stock

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Microchip USA

USA . 344 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Unlock the power of reliable data storage with the 24AA128-I/SNG by Microchip Technology. This high-quality EEPROM offers unparalleled endurance with 1,000,000 write/erase cycles, ensuring your valuable information is safely stored. Ideal for industrial applications, this compact device is easy to integrate and operates seamlessly at a wide temperature range. Trust in Microchip Technology's expertise to deliver top-notch performance and reliability. Upgrade your systems today and experience the benefits of secure, long-lasting memory solutions.

Feature Benefit Bullets

Package Body Material

The plastic/epoxy package body material makes the EEPROM durable and resistant to external environmental factors, ensuring reliability and longevity.

Surface Mount

The surface mount feature allows for easy and efficient installation on printed circuit boards, saving time and effort during assembly.

Operating Mode

The synchronous operation mode ensures precise and coordinated data transfer, making the EEPROM suitable for time-sensitive applications.

Nominal Supply Voltage / Vsup (V)

The nominal supply voltage of 2.5V ensures compatibility with a wide range of electronic devices and power sources.

No. of Words Code

With a 16K word code, the EEPROM offers ample storage capacity for data and program code, making it versatile for various applications.

Technical Specifications

EEPROM 24AA128-I/SNG attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Additional Features:

1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24AA128-I/SNG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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