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24LC04BT-E/SNG

Microchip Technology

24LC04BT-E/SNG by Microchip Technology

24LC04BT-E/SNG by Microchip Technology is a 512x8 EEPROM with I2C control byte. Operating at 5V, it offers 1000000 write/erase cycles and endurance of 200s. Ideal for automotive applications due to its TS16949 screening level and -40 to 125°C temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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VNN

France . 2,933 parts In-Stock

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Vyrian

USA . 2,077 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Corohmni

South Africa . 273 parts In-Stock

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$3.428

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Aztec Data Supply Inc.

USA . 4,803 parts In-Stock

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$3.496

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AZTECH Wire

Italy . 276 parts In-Stock

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Semicontronic

India . 1,299 parts In-Stock

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$20.000

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$19.500

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$19.400

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Ampacity Inc.

Singapore . 1,173 parts In-Stock

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$28.000

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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Microchip USA

USA . 7,162 parts In-Stock

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Continental Prestige Electronics

USA . 6,827 parts In-Stock

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Fulton Briggs Corp.

USA . 6,163 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Argo Parts USA

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Overview

Unlock the power of reliable data storage with the 24LC04BT-E/SNG EEPROM by Microchip Technology. Perfect for automotive applications, this small outline memory chip offers 512x8 organization and 1,000,000 write/erase cycles, ensuring long-lasting performance. With a maximum operating temperature of 125°C and a minimum operating temperature of -40°C, this EEPROM is built to withstand extreme conditions. Trust in the quality of Microchip Technology and experience seamless data storage solutions for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and helps protect the internal components of the EEPROM, making it a reliable choice for various applications.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and data transfers, enhancing the performance and efficiency of the EEPROM.

Nominal Supply Voltage / Vsup (V): 5

The standard 5V supply voltage makes it compatible with many systems and makes installation and integration easier.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and makes it suitable for compact devices and applications.

Temperature Grade: AUTOMOTIVE

With automotive-grade temperature tolerance, this EEPROM can withstand harsh environmental conditions, making it ideal for automotive applications.

Endurance: 1000000 Write/Erase Cycles

With a high endurance level, this EEPROM can handle frequent read/write operations without wearing out quickly, ensuring long-term reliability.

Technical Specifications

EEPROM 24LC04BT-E/SNG attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010XXMR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

5

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512X8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Programming Voltage (V):

5

Qualification:

Not Qualified

Screening Level:

TS 16949

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24LC04BT-E/SNG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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