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EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.

EEPROM

Available Parts 850

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
M95512-DRDW6TP by STMicroelectronics

M95512-DRDW6TP

STMicroelectronics

STMicroelectronics M95512-DRDW6TP is an EEPROM with 64KX8 organization, SPI serial bus type, and 5 MHz clock frequency. It operates in industrial temperature range (-40 to 85 °C) and offers 1000000 write/erase cycles. Ideal for applications requiring low power consumption and high endurance memory solutions.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

4.4 mm

524288 bit

EEPROM

8

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

NOT SPECIFIED

2/5

Not Qualified

1.2 mm

SPI

.000005 Amp

EEPROMs

8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

NOT SPECIFIED

3 mm

5 ms

HARDWARE/SOFTWARE

M95512-DRMN6TP by STMicroelectronics

M95512-DRMN6TP

STMicroelectronics

STMicroelectronics M95512-DRMN6TP is a 64KX8 EEPROM with SPI interface, operating at 5 MHz clock frequency. It has 1000000 Write/Erase Cycles endurance and supports hardware/software write protection. Ideal for industrial applications requiring small outline package, with temperature range of -40 to 85 °C.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

524288 bit

EEPROM

8

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

2/5

Not Qualified

1.75 mm

SPI

.000005 Amp

EEPROMs

8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

5 ms

HARDWARE/SOFTWARE

M95512-RMB6TG by STMicroelectronics

M95512-RMB6TG

STMicroelectronics

M95512-RMB6TG by STMicroelectronics is an EEPROM with 64KX8 organization, SPI serial bus type, and 1000000 write/erase cycles endurance. It operates at a max clock frequency of 5 MHz and has a memory density of 524288 bit. Ideal for industrial applications requiring reliable non-volatile memory storage.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-N8

e4

3 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

.6 mm

SPI

.000005 Amp

EEPROMs

8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE/SOFTWARE

24AA128-I/ST by Microchip Technology

24AA128-I/ST

Microchip Technology

24AA128-I/ST by Microchip Tech is an EEPROM with 16KX8 organization, 131072-bit memory density, and 1000000 write/erase cycles. It operates at 0.4 MHz clock frequency in industrial temperature grade applications. Suitable for I2C serial bus systems, it offers a max supply voltage of 5.5V and endurance of 1M cycles.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.4 mm

131072 bit

EEPROM

8

1

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

OPEN-DRAIN

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

1.2 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

AT17LV256-10PC by Atmel

AT17LV256-10PC

Atmel

AT17LV256-10PC by Atmel is a 256KX1 EEPROM with 3.3V supply, 10MHz clock frequency, and 75ns access time. It is ideal for configuration memory applications due to its synchronous operation and 3-STATE output characteristics. The package style is IN-LINE with DUAL terminals in a RECTANGULAR shape, making it suitable for various commercial temperature grade environments.

75 ns

IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO

10 MHz

R-PDIP-T8

e0

9.271 mm

262144 bit

CONFIGURATION MEMORY

1

1

1

8

262144 words

256K

SYNCHRONOUS

70 Cel

0 Cel

256KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3.3

Not Qualified

5.334 mm

.00005 Amp

EEPROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

AT17LV512-10JC by Atmel

AT17LV512-10JC

Atmel

AT17LV512-10JC by Atmel is a 512KX1 EEPROM chip with synchronous operation, 15 MHz clock frequency, and 524288-bit memory density. It is used in configuration memory applications, operates at 3.3V supply voltage, and has a max temperature of 70°C.

IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO

15 MHz

S-PQCC-J20

e0

8.9662 mm

524288 bit

CONFIGURATION MEMORY

1

2

1

20

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX1

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.572 mm

EEPROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

8.9662 mm

HARDWARE

AT17C256-10PI by Atmel

AT17C256-10PI

Atmel

AT17C256-10PI by Atmel is a 256KX1 EEPROM with 3-STATE output, operating at 5V. It features a max clock frequency of 12.5 MHz and industrial temperature grade. Ideal for configuration memory applications due to its serial interface and compact IN-LINE package style.

55 ns

12.5 MHz

R-PDIP-T8

e0

9.398 mm

262144 bit

CONFIGURATION MEMORY

1

1

8

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

4.318 mm

.00015 Amp

EEPROMs

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

AT17C128-10SI by Atmel

AT17C128-10SI

Atmel

AT17C128-10SI by Atmel is a 128KX1 EEPROM with 131072 bit memory density. It operates at 5V, has a max access time of 55ns, and is ideal for configuration memory applications in industrial settings.

55 ns

R-PDSO-G20

e0

12.8 mm

131072 bit

CONFIGURATION MEMORY

1

1

20

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

2.65 mm

.002 Amp

EEPROMs

10 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

7.5 mm

AT28C010E-15TI by Atmel

AT28C010E-15TI

Atmel

Atmel's AT28C010E-15TI is a 128Kx8 EEPROM with 100,000 Write/Erase cycles. Operating at 5V, it offers a max access time of 150ns and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

150 ns

AUTOMATIC WRITE

NO

YES

100000 Write/Erase Cycles

R-PDSO-G32

e0

18.4 mm

1048576 bit

EEPROM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

128

PARALLEL

240

5

5

Not Qualified

1.2 mm

.0002 Amp

EEPROMs

40 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

8 mm

10 ms

M24C32-WBN6 by STMicroelectronics

M24C32-WBN6

STMicroelectronics

STMicroelectronics M24C32-WBN6 is an EEPROM with 4Kx8 organization, operating at 5V. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e0

9.27 mm

32768 bit

EEPROM

8

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

AEC-Q100

5.33 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

10 ms

HARDWARE

M24C32-WMN6T by STMicroelectronics

M24C32-WMN6T

STMicroelectronics

M24C32-WMN6T by STMicroelectronics is an EEPROM with 4Kx8 organization, I2C serial bus type, and 1000000 write/erase cycles endurance. It operates at a max clock frequency of 0.4 MHz and has a memory density of 32768 bits. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.9 mm

32768 bit

EEPROM

8

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

AEC-Q100

1.75 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE

M24C64-WMN6T by STMicroelectronics

M24C64-WMN6T

STMicroelectronics

M24C64-WMN6T by STMicroelectronics is an 8KX8 EEPROM with I2C control byte 1010DDDR. It operates at a max clock frequency of 0.4 MHz and has a memory density of 65536 bit. Ideal for industrial applications requiring reliable data storage with up to 1000000 write/erase cycles.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.9 mm

65536 bit

EEPROM

8

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE

M93C46-WBN6 by STMicroelectronics

M93C46-WBN6

STMicroelectronics

M93C46-WBN6 by STMicroelectronics is an EEPROM with 64x16 organization, 1024-bit memory density, and 1000000 write/erase cycles endurance. It operates at a max clock frequency of 2 MHz in industrial temperature grade applications. The serial bus type is MICROWIRE for synchronous operation with software write protection.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDIP-T8

e0

9.27 mm

1024 bit

EEPROM

16

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

SOFTWARE

M93C56-WBN6 by STMicroelectronics

M93C56-WBN6

STMicroelectronics

M93C56-WBN6 by STMicroelectronics is a 2048-bit EEPROM with 128x16 organization, operating at 2 MHz. It features a synchronous mode, software write protection, and MICROWIRE serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact 8-terminal package.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDIP-T8

e0

9.27 mm

2048 bit

EEPROM

16

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X16

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

MICROWIRE

.00001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

SOFTWARE

M93C76-WMN6T by STMicroelectronics

M93C76-WMN6T

STMicroelectronics

M93C76-WMN6T by STMicroelectronics is a 512x16 EEPROM with 2MHz clock frequency, 1000000 write/erase cycles endurance, and MICROWIRE serial bus. It operates at -40 to 85 °C, has software write protection, and is ideal for industrial applications requiring small outline packages.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

8192 bit

EEPROM

16

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

MICROWIRE

.00001 Amp

EEPROMs

1.5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

SOFTWARE

M93C46-WMN6T by STMicroelectronics

M93C46-WMN6T

STMicroelectronics

M93C46-WMN6T by STMicroelectronics is a 1024-bit EEPROM with 64x16 organization, operating at up to 2 MHz clock frequency. It features software write protection, industrial temperature grade, and MICROWIRE serial bus type. Ideal for applications requiring low power consumption and reliable non-volatile memory storage in compact designs.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

1024 bit

EEPROM

16

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

SOFTWARE

M93C46-WMN6 by STMicroelectronics

M93C46-WMN6

STMicroelectronics

M93C46-WMN6 by STMicroelectronics is a 1024-bit EEPROM with 64x16 organization, operating at 2MHz clock frequency. It features software write protection, industrial temperature grade, and MICROWIRE serial bus type. Ideal for applications requiring low power consumption and reliable non-volatile memory storage in compact designs.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

1024 bit

EEPROM

16

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

SOFTWARE

M93C56-WMN6T by STMicroelectronics

M93C56-WMN6T

STMicroelectronics

M93C56-WMN6T by STMicroelectronics is a 2048-bit EEPROM with 128x16 organization, operating at up to 2 MHz clock frequency. It features software write protection and MICROWIRE serial bus type, suitable for industrial temperature grade applications. With a small outline package style and low standby current of 0.000005A, it offers reliable non-volatile memory storage solutions.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

2048 bit

EEPROM

16

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/5

Not Qualified

1.75 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

5 ms

SOFTWARE

M93C66-WMN6T by STMicroelectronics

M93C66-WMN6T

STMicroelectronics

M93C66-WMN6T by STMicroelectronics is a 4096-bit EEPROM with 256x16 organization, operating at up to 2 MHz clock frequency. It features software write protection, MICROWIRE serial bus type, and industrial temperature grade. Ideal for applications requiring low power consumption and reliable non-volatile memory storage in compact designs.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

4096 bit

EEPROM

16

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

MICROWIRE

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

SOFTWARE

M93C66-WMN6 by STMicroelectronics

M93C66-WMN6

STMicroelectronics

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Qualification: Not Qualified;

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

4096 bit

EEPROM

16

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

MICROWIRE

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

SOFTWARE

M93C86-WMN6 by STMicroelectronics

M93C86-WMN6

STMicroelectronics

M93C86-WMN6 by STMicroelectronics is a 16K EEPROM with 1Kx16 organization, operating at up to 2MHz clock frequency. It features software write protection and offers 1000000 Write/Erase cycles endurance. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

16384 bit

EEPROM

16

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

MICROWIRE

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

SOFTWARE

M93C46-BN6 by STMicroelectronics

M93C46-BN6

STMicroelectronics

M93C46-BN6 by STMicroelectronics is a 1024-bit EEPROM with 64x16 organization, operating at 5V. It features a MICROWIRE serial bus, 2MHz clock frequency, and software write protection. Ideal for industrial applications requiring reliable non-volatile memory in a compact IN-LINE package.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDIP-T8

e0

9.27 mm

1024 bit

EEPROM

16

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

5.33 mm

MICROWIRE

.00005 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

SOFTWARE

M93C46-MN6T by STMicroelectronics

M93C46-MN6T

STMicroelectronics

M93C46-MN6T by STMicroelectronics is a 1024-bit EEPROM with 64x16 organization, operating at up to 2 MHz clock frequency. It features a serial interface, software write protection, and industrial temperature grade. Ideal for applications requiring low power consumption and reliable non-volatile memory storage in compact designs.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

1024 bit

EEPROM

16

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

MICROWIRE

.00005 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

SOFTWARE

M93C46-MN6 by STMicroelectronics

M93C46-MN6

STMicroelectronics

M93C46-MN6 by STMicroelectronics is a 1024-bit EEPROM with 64x16 organization, operating at 5V. It features a serial interface using MICROWIRE protocol and offers 1000000 write/erase cycles. This small outline package IC is ideal for industrial applications requiring reliable non-volatile memory storage.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

1024 bit

EEPROM

16

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

MICROWIRE

.00005 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

SOFTWARE

M93C56-MN6T by STMicroelectronics

M93C56-MN6T

STMicroelectronics

M93C56-MN6T by STMicroelectronics is a 2048-bit EEPROM with 128x16 organization, operating at 2MHz clock frequency. It features software write protection, synchronous operation, and MICROWIRE serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact 8-terminal package.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

2048 bit

EEPROM

16

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

MICROWIRE

.000015 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

SOFTWARE

M93C66-MN6T by STMicroelectronics

M93C66-MN6T

STMicroelectronics

M93C66-MN6T by STMicroelectronics is a 4096-bit EEPROM with 256x16 organization, operating at 2MHz clock frequency. It features software write protection, MICROWIRE serial bus type, and 1000000 write/erase cycles endurance. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

4096 bit

EEPROM

16

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

MICROWIRE

.000015 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

SOFTWARE

M93C66-MN6 by STMicroelectronics

M93C66-MN6

STMicroelectronics

M93C66-MN6 by STMicroelectronics is a 4096-bit EEPROM with 256x16 organization, operating at 2MHz clock frequency. It features software write protection, synchronous operation, and MICROWIRE serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

4096 bit

EEPROM

16

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

MICROWIRE

.000015 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

SOFTWARE

M93C86-MN6T by STMicroelectronics

M93C86-MN6T

STMicroelectronics

STMicroelectronics M93C86-MN6T is a 16K-bit EEPROM with 1Kx16 organization, operating at 2MHz clock frequency. It features software write protection, industrial temperature grade, and MICROWIRE serial bus type. Ideal for applications requiring low power consumption and high endurance in a compact small outline package.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

16384 bit

EEPROM

16

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

MICROWIRE

.000015 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

SOFTWARE

M93C86-MN6 by STMicroelectronics

M93C86-MN6

STMicroelectronics

M93C86-MN6 by STMicroelectronics is a 16K-bit EEPROM with 1Kx16 organization, operating at 5V. It features a serial interface, 2MHz clock frequency, and software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

8

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

16384 bit

EEPROM

16

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

MICROWIRE

.000015 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

SOFTWARE

M24C01-WBN6 by STMicroelectronics

M24C01-WBN6

STMicroelectronics

M24C01-WBN6 by STMicroelectronics is an EEPROM with 128x8 organization, operating at 5V. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e0

9.27 mm

1024 bit

EEPROM

8

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C02-WBN6 by STMicroelectronics

M24C02-WBN6

STMicroelectronics

STMicroelectronics M24C02-WBN6 is an EEPROM with 256x8 organization, I2C serial bus type, and 2048-bit memory density. It operates at a max clock frequency of 0.4 MHz and has a write protection feature for hardware security. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e0

9.27 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C04-WBN6 by STMicroelectronics

M24C04-WBN6

STMicroelectronics

The STMicroelectronics M24C04-WBN6 is an EEPROM with 512x8 organization, operating at 5V. It features a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

e0

9.27 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M93S56-WBN6 by STMicroelectronics

M93S56-WBN6

STMicroelectronics

STMicroelectronics M93S56-WBN6 is a 2048-bit EEPROM with 128x16 organization, operating at 2MHz clock frequency. It features hardware/software write protection and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

2 MHz

40

1000000 Write/Erase Cycles

R-PDIP-T8

e0

9.27 mm

2048 bit

EEPROM

16

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X16

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

M93S66-WBN6 by STMicroelectronics

M93S66-WBN6

STMicroelectronics

M93S66-WBN6 by STMicroelectronics is a 256x16 EEPROM with 2MHz clock frequency, 1000000 write/erase cycles, and MICROWIRE serial bus. It operates at -40 to 85 °C, has 8 terminals in an IN-LINE package style, and offers hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage.

2 MHz

40

1000000 Write/Erase Cycles

R-PDIP-T8

e0

9.27 mm

4096 bit

EEPROM

16

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X16

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

M24256-WMW6 by STMicroelectronics

M24256-WMW6

STMicroelectronics

M24256-WMW6 by STMicroelectronics is a 32KX8 EEPROM with 262144 bit memory density. It operates at 5V, has a max clock frequency of 0.4 MHz, and supports I2C serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage in small outline packages.

.4 MHz

40

100000 Write/Erase Cycles

1010000R

R-PDSO-G8

e0

5.3 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

2.03 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

5.25 mm

10 ms

HARDWARE

M24C02-RDW6T by STMicroelectronics

M24C02-RDW6T

STMicroelectronics

STMicroelectronics M24C02-RDW6T is an EEPROM with 256x8 organization, operating at 2.5V, and featuring I2C control byte 1010DDDR. It has a max clock frequency of 0.4 MHz, suitable for industrial applications requiring up to 1000000 write/erase cycles.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.4 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2/5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.65 mm

DUAL

3 mm

10 ms

HARDWARE

M95080-WMN6T by STMicroelectronics

M95080-WMN6T

STMicroelectronics

M95080-WMN6T by STMicroelectronics is an EEPROM with 1KX8 organization, SPI serial bus type, and 2 MHz clock frequency. It is used in industrial applications for data storage due to its 1000000 write/erase cycles endurance and small outline package style.

MINIMUM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

8192 bit

EEPROM

8

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE/SOFTWARE

M95080-WMN6 by STMicroelectronics

M95080-WMN6

STMicroelectronics

M95080-WMN6 by STMicroelectronics is an EEPROM with 1KX8 organization, SPI serial bus type, and 2 MHz clock frequency. It is used in industrial applications for data storage due to its 1000000 write/erase cycles endurance and small outline package style.

MINIMUM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

8192 bit

EEPROM

8

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE/SOFTWARE

M95160-WMN6 by STMicroelectronics

M95160-WMN6

STMicroelectronics

M95160-WMN6 by STMicroelectronics is an EEPROM with 2Kx8 organization, SPI serial bus type, and 16384-bit memory density. It operates at a max clock frequency of 2MHz and has a write protection feature for hardware/software security. Ideal for industrial applications requiring reliable non-volatile memory storage.

MINIMUM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE/SOFTWARE

M24C01-WMN6T by STMicroelectronics

M24C01-WMN6T

STMicroelectronics

M24C01-WMN6T by STMicroelectronics is a 1024-bit EEPROM with I2C serial bus, offering 1000000 write/erase cycles. Operating at 5V, it has an endurance of 40 years and supports a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.9 mm

1024 bit

EEPROM

8

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24C02-WDW6T by STMicroelectronics

M24C02-WDW6T

STMicroelectronics

M24C02-WDW6T by STMicroelectronics is an EEPROM with 256x8 organization, I2C control byte 1010DDDR, and 2048-bit memory density. It operates in synchronous mode at a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable data storage with hardware write protection.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.4 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

3/5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

M24C02-WMN6 by STMicroelectronics

M24C02-WMN6

STMicroelectronics

M24C02-WMN6 by STMicroelectronics is an EEPROM with 256x8 organization, I2C serial bus type, and 2048-bit memory density. It operates at a max clock frequency of 0.4 MHz and has a write protection feature for hardware security. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.9 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24C04-WDW6T by STMicroelectronics

M24C04-WDW6T

STMicroelectronics

M24C04-WDW6T by STMicroelectronics is an EEPROM with 512x8 organization, I2C control byte 1010DDMR, and 1000000 write/erase cycles. It operates in synchronous mode at a max clock frequency of 0.4 MHz and is ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e0

4.4 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

3/5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

M24C04-WMN6T by STMicroelectronics

M24C04-WMN6T

STMicroelectronics

M24C04-WMN6T by STMicroelectronics is a 4096-bit EEPROM with 512x8 organization, operating at 5V. It features I2C control byte 1010DDMR and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e0

4.9 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24C04-WMN6 by STMicroelectronics

M24C04-WMN6

STMicroelectronics

The STMicroelectronics M24C04-WMN6 is a 4096-bit EEPROM with 512x8 organization, operating at 5V. It features I2C serial bus, hardware write protection, and endurance of 1M cycles. Ideal for industrial applications requiring reliable non-volatile memory in a small outline package.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e0

4.9 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M34C02-WMN6T by STMicroelectronics

M34C02-WMN6T

STMicroelectronics

M34C02-WMN6T by STMicroelectronics is a 256x8 EEPROM with I2C control byte. It operates at 5V, has 2048 bit memory density, and supports up to 0.4 MHz clock frequency. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.9 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.0000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE/SOFTWARE

M93S46-WMN6T by STMicroelectronics

M93S46-WMN6T

STMicroelectronics

M93S46-WMN6T by STMicroelectronics is a 1024-bit EEPROM with 64x16 organization, operating at up to 2 MHz clock frequency. It features hardware/software write protection and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

1024 bit

EEPROM

16

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

M93S46-WMN6 by STMicroelectronics

M93S46-WMN6

STMicroelectronics

M93S46-WMN6 by STMicroelectronics is a 1024-bit EEPROM with 64x16 organization, operating at 2MHz clock frequency. It features synchronous operation, hardware/software write protection, and MICROWIRE serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

1024 bit

EEPROM

16

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE