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M95080-WMN6

STMicroelectronics

M95080-WMN6 by STMicroelectronics

M95080-WMN6 by STMicroelectronics is an EEPROM with 1KX8 organization, SPI serial bus type, and 2 MHz clock frequency. It is used in industrial applications for data storage due to its 1000000 write/erase cycles endurance and small outline package style.

Median Price

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Digiode

USA . 3,258 parts In-Stock

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Zilex Electronics Inc.

Canada . 2,250 parts In-Stock

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Vyrian

USA . 2,133 parts In-Stock

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Anansix

USA . 1,588 parts In-Stock

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Martec Srl

Italy . 1,088 parts In-Stock

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Bristol Electronics

USA . 746 parts In-Stock

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ComSIT Distribution GmbH

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Prism Electronics

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IDEA Electronic Components Group

UK . 697 parts In-Stock

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$2.086

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$1.877

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MKK Technologies

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$3.922

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DigiPath Technology Company

USA . 2,242 parts In-Stock

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AZTECH Wire

Italy . 290 parts In-Stock

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Microchip USA

USA . 163 parts In-Stock

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Component Stockers USA

USA . 734 parts In-Stock

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Corphita

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RC Electronics

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Infinite Electronics LLP (Excess)

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Parana Technologies

USA . 1,282 parts In-Stock

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Perfect Parts

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Overview

Enhance your electronics projects with the M95080-WMN6 EEPROM by STMicroelectronics. With a reputation for high quality and reliability, STMicroelectronics delivers top-notch components for a wide range of applications. This EEPROM offers customers exceptional value with its endurance of 1,000,000 write/erase cycles, ensuring long-lasting performance. Whether you're working on industrial automation or consumer electronics, this versatile product provides the storage capacity and reliability you need. Trust STMicroelectronics to deliver excellence in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers durability and protection for the EEPROM, ensuring longevity and reliability.

Surface Mount: YES

The surface mount feature makes it easy to integrate the EEPROM into various electronic circuit boards, saving space and allowing for efficient assembly.

Operating Mode: SYNCHRONOUS

The synchronous operation allows for precise timing and data transfer, ensuring accurate and efficient performance of the EEPROM.

Nominal Supply Voltage / Vsup (V): 4.5

The 4.5V nominal supply voltage ensures stable and consistent power delivery to the EEPROM, optimizing its functionality.

Power Supplies (V): 3/5

Having options for 3V or 5V power supplies allows for flexibility in different electronic systems, making the EEPROM versatile in its applications.

No. of Terminals: 8

The 8 terminals provide multiple connection points for the EEPROM, enhancing its compatibility and ease of integration with other components.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact design layouts, making the EEPROM suitable for use in various electronic devices.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures reliable performance even in harsh environmental conditions, making the EEPROM durable and resilient.

Organization: 1KX8

The 1KX8 organization means the EEPROM has a capacity of 1 kilobit organized in 8-bit words, offering sufficient memory storage for data storage and retrieval.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow the EEPROM to have three different output states, enabling efficient data transmission and processing.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C ensures the EEPROM can function effectively even in extreme cold conditions, enhancing its reliability.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good connectivity and solderability, ensuring stable connections for the EEPROM within electronic circuits.

Terminal Position: DUAL

The dual terminal position offers flexibility in installation and connection options, making the EEPROM adaptable to different circuit layouts and configurations.

Write Protection: HARDWARE/SOFTWARE

The hardware and software write protection features ensure data security and integrity, preventing unauthorized access or modifications to the stored information.

Maximum Seated Height: 1.75 mm

The low maximum seated height of 1.75 mm allows for slim and compact device designs when incorporating the EEPROM, enhancing the overall aesthetics and functionality.

Maximum Clock Frequency (fCLK): 2 MHz

The high maximum clock frequency of 2 MHz enables fast data transfer and processing speeds, improving the overall performance and efficiency of the EEPROM.

Width: 3.9 mm

The compact width of 3.9 mm makes the EEPROM suitable for space-constrained applications, allowing for efficient utilization of board space.

Minimum Supply Voltage (Vsup): 2.5 V

The minimum supply voltage of 2.5V ensures the EEPROM can operate reliably even with lower power input, making it energy-efficient and versatile.

Length: 4.9 mm

The short length of 4.9 mm contributes to the overall compactness and space-saving design of electronic devices that incorporate the EEPROM, offering efficient use of available space.

Temperature Grade: INDUSTRIAL

The industrial temperature grade designation indicates that the EEPROM is designed to withstand demanding industrial environments, ensuring robust performance and longevity.

Technology: CMOS

The CMOS technology used in the EEPROM results in low power consumption, high noise immunity, and fast switching speeds, enhancing the overall efficiency and reliability of the device.

Parallel or Serial: SERIAL

The serial communication interface simplifies data transfer and allows for easy integration with microcontrollers and other serial devices, offering convenience and compatibility.

Terminal Form: GULL WING

The gull wing terminal form provides secure mounting and soldering connections for the EEPROM, ensuring stability and reliability in the electronic circuit.

Maximum Supply Current: 2 mA

The low maximum supply current of 2 mA results in minimal power consumption, making the EEPROM energy-efficient and suitable for battery-powered devices.

No. of Words: 1024 words

Having 1024 words of memory allows the EEPROM to store a significant amount of data, making it suitable for various data storage and retrieval applications.

Memory Width: 8

With a memory width of 8 bits, the EEPROM can efficiently store and retrieve data in 8-bit increments, offering versatility and compatibility with different data formats.

Minimum Data Retention Time: 40

The minimum data retention time of 40 years ensures long-term reliability and integrity of stored data, making the EEPROM a dependable choice for data storage applications.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch allows for easy soldering and mounting of the EEPROM on circuit boards, facilitating quick and secure connections in electronic assemblies.

No. of Words Code: 1K

The 1K word code signifies the capacity of the EEPROM, indicating that it can store 1 kilobit of data in words, providing sufficient memory storage for various applications.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V ensures compatibility with a wide range of power sources, making the EEPROM versatile and suitable for diverse electronic systems.

Endurance: 1000000 Write/Erase Cycles

The high endurance rating of 1,000,000 write/erase cycles indicates the durability and longevity of the EEPROM, ensuring reliable performance and data retention over multiple cycles of use.

Serial Bus Type: SPI

The SPI (Serial Peripheral Interface) bus type allows for high-speed serial communication and efficient data transfer between the EEPROM and other devices, enhancing overall system performance.

Maximum Write Cycle Time (tWC): 10 ms

The short maximum write cycle time of 10 ms ensures quick and efficient data writing operations, reducing latency and improving the responsiveness of the EEPROM.

Memory Density: 8192 bit

With a memory density of 8192 bits, the EEPROM offers ample storage capacity for data storage and retrieval, making it suitable for a wide range of applications.

Memory IC Type: EEPROM

Being an EEPROM (Electrically Erasable Programmable Read-Only Memory) type IC, this product allows for non-volatile data storage, enabling data retention even when power is removed.

Maximum Standby Current: 0.000002 Amp

The extremely low maximum standby current of 0.000002 Amp minimizes power consumption when the EEPROM is in standby mode, ensuring energy efficiency and prolonged battery life in electronic devices.

Technical Specifications

EEPROM M95080-WMN6 attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Additional Features:

MINIMUM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

Maximum Clock Frequency (fCLK):

2 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000002 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M95080-WMN6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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