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M24C32-WBN6P

STMicroelectronics

M24C32-WBN6P by STMicroelectronics

STMicroelectronics M24C32-WBN6P is an EEPROM with 4Kx8 organization, operating at 2.7V, and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz and is suitable for industrial applications requiring reliable non-volatile memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Cogito LLC

Ukraine . 11,227 parts In-Stock

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11,227

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Vyrian

USA . 8,364 parts In-Stock

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8,364

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ComSIT Distribution GmbH

Germany . 7,392 parts In-Stock

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7,392

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Digiode

USA . 2,852 parts In-Stock

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2,852

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Anansix

USA . 1,839 parts In-Stock

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1,839

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Avant Electronics Limited

UK . 1,000 parts In-Stock

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1,000

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Resion

USA . 167 parts In-Stock

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167

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Pegasus Components GmbH

Germany . 150 parts In-Stock

1+ parts

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150

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LIBRA Elektronik GmbH

Germany . 100 parts In-Stock

1+ parts

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100

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Speed Components Ltd

Israel . 28 parts In-Stock

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28

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LWI Electronics Inc

India . 24 parts In-Stock

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24

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LittleDiode

UK . 5 parts In-Stock

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5

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 49 parts In-Stock

1+ parts

$5.311

100+ parts

-

1k+ parts

$4.780

10k+ parts

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49

$5.311

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$4.780

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MKK Technologies

India . 1,130 parts In-Stock

1+ parts

$9.987

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1,130

$9.987

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DigiPath Technology Company

USA . 1,130 parts In-Stock

1+ parts

$9.987

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1,130

$9.987

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Microchip USA

USA . 452 parts In-Stock

1+ parts

$12.697

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452

$12.697

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AZTECH Wire

Italy . 326 parts In-Stock

1+ parts

$15.030

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326

$15.030

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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Corphita

USA . 2,800 parts In-Stock

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2,800

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Parana Technologies

USA . 2,155 parts In-Stock

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$6.350

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2,155

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$6.350

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Perfect Parts

USA . 1,620 parts In-Stock

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1,620

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Kepictronics

USA . 1,226 parts In-Stock

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1,226

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GreenTree Electronics

Israel . 135 parts In-Stock

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135

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Overview

Unlock endless possibilities with the M24C32-WBN6P EEPROM by STMicroelectronics. This high-quality memory IC offers unparalleled reliability and performance, making it ideal for a wide range of industrial applications. With a compact design and advanced features like hardware write protection and low power consumption, this EEPROM is a versatile solution that provides exceptional value to customers looking for dependable storage solutions. Experience the difference with STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM, ensuring a longer lifespan.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and data transmission, making the EEPROM reliable and efficient.

Nominal Supply Voltage / Vsup (V): 2.7

The low supply voltage requirement of 2.7V helps in reducing power consumption and is suitable for various applications.

No. of Terminals: 8

Having 8 terminals provides flexibility in connecting to other components, enhancing the versatility of the EEPROM.

Memory Density: 32768 bit

High memory density allows for storing a large amount of data in a compact space, making the EEPROM efficient for data storage purposes.

Endurance: 1000000 Write/Erase Cycles

The high endurance rating ensures reliable performance over a long period of time, making the EEPROM a durable and trustworthy choice.

Technical Specifications

EEPROM M24C32-WBN6P attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

9.27 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

5.33 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000002 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

2.7

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

M24C32-WBN6P Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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