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24LC64XT-E/ST

Microchip Technology

24LC64XT-E/ST by Microchip Technology

24LC64XT-E/ST by Microchip Tech is an EEPROM with 8KX8 organization, 65536-bit memory density, and 1000000 write/erase cycles. Operating in automotive grade at -40 to 125 °C, it uses I2C serial bus for applications requiring reliable non-volatile memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 5,188 parts In-Stock

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VNN

France . 40 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$4.599

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$4.553

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$4.369

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$4.599

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Corohmni

South Africa . 14 parts In-Stock

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$5.204

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Ampacity Inc.

Singapore . 1,494 parts In-Stock

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AZTECH Wire

Italy . 855 parts In-Stock

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$17.040

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855

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Authorized Procurement Solutions

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West Coast Incorporated

USA . 5,975 parts In-Stock

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Continental Prestige Electronics

USA . 1,619 parts In-Stock

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Argo Parts USA

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Netroflash

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Overview

Unlock the power of data storage with the 24LC64XT-E/ST by Microchip Technology. As a leader in EEPROM technology, Microchip ensures reliability and quality in every product. Ideal for automotive applications, this EEPROM offers 8Kx8 organization, 1000000 write/erase cycles, and a wide operating temperature range of -40 to 125°C. With its small outline, thin profile package, and I2C serial bus type, the 24LC64XT-E/ST provides seamless integration and efficient performance. Trust Microchip to deliver cutting-edge solutions for your data storage needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the EEPROM chip, ensuring long-term reliability.

Surface Mount: YES

Being surface mountable allows for easy integration onto circuit boards, saving space and assembly time.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and communication with other devices in the system.

Nominal Supply Voltage / Vsup (V): 4.5

The 4.5V supply voltage offers a stable power source for the EEPROM chip to function optimally.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this EEPROM can withstand harsh environmental conditions, making it suitable for automotive applications.

Endurance: 1000000 Write/Erase Cycles

With a high endurance level of 1 million write/erase cycles, this EEPROM chip is reliable for frequent data read/write operations.

Technical Specifications

EEPROM 24LC64XT-E/ST attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Additional Features:

DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.4 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Programming Voltage (V):

4.5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24LC64XT-E/ST Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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