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PCF8582C-2T/03,112

NXP Semiconductors

PCF8582C-2T/03,112 by NXP Semiconductors

PCF8582C-2T/03,112 by NXP Semiconductors is an I2C-controlled EEPROM with 256x8 organization. Operating at 3.3V, it offers a max clock frequency of 0.1 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

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7

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1k+

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Vyrian

USA . 7,033 parts In-Stock

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Digiode

USA . 3,606 parts In-Stock

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Anansix

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Nova Conductors

Japan . 500 parts In-Stock

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Martec Srl

Italy . 46 parts In-Stock

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ComSIT USA

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QIE Inc.

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Corohmni

South Africa . 1,205 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,806 parts In-Stock

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AZTECH Wire

Italy . 223 parts In-Stock

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One Stop Electronics

USA . 331 parts In-Stock

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$18.000

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Ampacity Inc.

Singapore . 472 parts In-Stock

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Continental Prestige Electronics

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Microchip USA

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Argo Parts USA

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Corphita

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Aranea Global

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GreenTree Electronics

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Overview

Unlock endless possibilities with the NXP Semiconductors PCF8582C-2T/03,112 EEPROM. Built with precision and reliability in mind, this device offers unparalleled performance for a wide range of applications. From smart home devices to industrial automation systems, this EEPROM is designed to meet your needs with its high endurance, low power consumption, and industrial-grade temperature range. Trust NXP Semiconductors to deliver quality products that provide value and innovation, empowering you to create cutting-edge solutions. Experience the difference with the PCF8582C-2T/03,112 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM, making it suitable for various operating environments.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal voltage supply ensures stable performance and efficient operation of the EEPROM.

Maximum Operating Temperature: 85 °C

The high operating temperature range allows the EEPROM to function reliably in industrial settings where temperature fluctuations may occur.

Memory Density: 2048 bit

High memory density allows for storage of a large amount of data in a compact EEPROM, making it a practical choice for memory-intensive applications.

Endurance: 1000000 Write/Erase Cycles

The high endurance rating ensures longevity and reliability of the EEPROM, making it suitable for frequent read/write operations.

Serial Bus Type: I2C

The I2C serial bus type enables easy interfacing with other devices, simplifying the integration of the EEPROM into electronic systems.

Technical Specifications

EEPROM PCF8582C-2T/03,112 attributes and parameters. Explore more EEPROM devices from NXP Semiconductors

Specs

Maximum Clock Frequency (fCLK):

.1 MHz

Minimum Data Retention Time:

10

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.0000035 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

10 ms

Trade Compliance

PCF8582C-2T/03,112 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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