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24VL024HT/MNY

Microchip Technology

24VL024HT/MNY by Microchip Technology

24VL024HT/MNY by Microchip Technology is an EEPROM with 256x8 organization, operating at 2.5V, and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz and offers 1000000 write/erase cycles endurance. Ideal for applications requiring low power consumption and reliable non-volatile memory storage in compact designs.

Median Price

$0.664

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.664

100+ parts

-

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10

$0.664

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VNN

France . 13,851 parts In-Stock

1+ parts

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13,851

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Vyrian

USA . 4,886 parts In-Stock

1+ parts

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4,886

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 592 parts In-Stock

1+ parts

$13.819

100+ parts

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1k+ parts

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592

$13.819

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Ampacity Inc.

Singapore . 549 parts In-Stock

1+ parts

$15.000

100+ parts

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549

$15.000

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Fulton Briggs Corp.

USA . 1,238 parts In-Stock

1+ parts

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1,238

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Unlock endless possibilities with the 24VL024HT/MNY EEPROM by Microchip Technology. Built with top-quality materials and rigorous screening, this small outline package offers reliable performance in a wide range of applications. From industrial automation to consumer electronics, this synchronous-operating EEPROM is designed to meet your needs with its hardware write protection and long-lasting endurance. Experience the convenience of I2C control and the peace of mind knowing your data is secure with this versatile and efficient memory solution. Elevate your projects with the Microchip advantage today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the EEPROM, ensuring long-lasting performance.

Surface Mount: YES

Allows for easy installation on PCBs without the need for additional hardware.

Operating Mode: SYNCHRONOUS

Enables synchronized data transfers, improving efficiency and reliability.

Nominal Supply Voltage / Vsup (V): 2.5

Optimal voltage for reliable operation and performance.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for various operating environments.

Memory Density: 2048 bit

Offers ample storage capacity for data storage needs.

Endurance: 1000000 Write/Erase Cycles

Provides high endurance for frequent read/write operations, increasing the lifespan of the EEPROM.

Serial Bus Type: I2C

Supports a popular communication protocol, enabling easy integration with other I2C devices.

Technical Specifications

EEPROM 24VL024HT/MNY attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Additional Features:

1.5V TO 1.8V @ 0.1MHz

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Length:

3 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

256X8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.3

Programming Voltage (V):

2.5

Qualification:

Not Qualified

Screening Level:

TS 16949

Maximum Seated Height:

.8 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

2 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24VL024HT/MNY Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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