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CAT24C512YI-G

Onsemi

CAT24C512YI-G by Onsemi

CAT24C512YI-G by Onsemi is a 64KX8 EEPROM with I2C control byte. Operating at 5V, it offers 1000000 write/erase cycles and 524288 bit memory density. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

Median Price

$0.990

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8,800 parts In-Stock

1+ parts

$0.990

100+ parts

$0.970

1k+ parts

$0.950

10k+ parts

-

8,800

$0.990

$0.970

$0.950

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 538 parts In-Stock

1+ parts

$0.940

100+ parts

-

1k+ parts

-

10k+ parts

-

538

$0.940

-

-

-

Chip Stock

USA . 32,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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32,000

-

-

-

-

Vyrian

USA . 11,805 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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11,805

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,748 parts In-Stock

1+ parts

$0.891

100+ parts

-

1k+ parts

-

10k+ parts

-

1,748

$0.891

-

-

-

Corohmni

South Africa . 468 parts In-Stock

1+ parts

$0.990

100+ parts

-

1k+ parts

-

10k+ parts

-

468

$0.990

-

-

-

Native Components

USA . 243 parts In-Stock

1+ parts

$5.677

100+ parts

-

1k+ parts

-

10k+ parts

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243

$5.677

-

-

-

AZTECH Wire

Italy . 464 parts In-Stock

1+ parts

$20.060

100+ parts

-

1k+ parts

-

10k+ parts

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464

$20.060

-

-

-

TANS Electronics

Latvia . 7,194 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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7,194

-

-

-

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SupplyDigital Components

Austria . 7,146 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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7,146

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-

-

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Kulean Microsystems

USA . 4,946 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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4,946

-

-

-

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Problanco Electronics

Mexico . 4,536 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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4,536

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-

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Microchip USA

USA . 1,946 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,946

-

-

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UHIMA Technologies

Türkiye . 590 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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590

-

-

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Northwest PG Solutions

USA . 439 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$5.563

10k+ parts

-

439

-

-

$5.563

-

Overview

Unlock endless possibilities with the CAT24C512YI-G by Onsemi. Crafted with precision and quality, this EEPROM device offers reliable data storage and retrieval for a wide range of industrial applications. With a high endurance of 1,000,000 write/erase cycles and low standby current, this product ensures long-term performance and efficiency. Trust in Onsemi's expertise and innovation to elevate your projects to new heights. Choose the CAT24C512YI-G for seamless integration, durability, and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the EEPROM, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Surface mount capability makes installation and assembly of the EEPROM easier and more convenient.

Nominal Supply Voltage: 5V

Operating at a standard 5V supply voltage makes integration with other electronic components seamless.

Maximum Operating Temperature: 85 °C

With a high operating temperature, this EEPROM can function reliably even in demanding industrial environments.

Memory Density: 524288 bit

High memory density allows for storing a large amount of data, making it suitable for various applications that require extensive memory storage.

Technical Specifications

EEPROM CAT24C512YI-G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Additional Features:

ALSO OPERATES WITH 1.8V MIN AT 4 KHZ

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.4 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000002 Amp

Maximum Supply Current:

2.5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

CAT24C512YI-G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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