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24AA52-I/ST

Microchip Technology

24AA52-I/ST by Microchip Technology

24AA52-I/ST by Microchip Technology is an EEPROM with 256x8 organization, I2C control byte 1010DDDR, and 1000000 write/erase cycles. It operates at -40 to 85 °C, has a max clock frequency of 0.1 MHz, and is ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

$0.545

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 22,485 parts In-Stock

1+ parts

$0.480

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$0.450

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$0.430

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$0.410

22,485

$0.480

$0.450

$0.430

$0.410

Mouser Electronics

USA . 755 parts In-Stock

1+ parts

$0.610

100+ parts

$0.511

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755

$0.610

$0.511

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NAC Semi

USA . 18,000 parts In-Stock

1+ parts

$0.520

100+ parts

$0.470

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$0.420

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-

18,000

$0.520

$0.470

$0.420

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Vyrian

USA . 4,054 parts In-Stock

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4,054

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VNN

France . 483 parts In-Stock

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483

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Bristol Electronics

USA . 310 parts In-Stock

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310

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Flex Direct, LLC

USA . 310 parts In-Stock

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310

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Nova Conductors

Japan . 150 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 536 parts In-Stock

1+ parts

$0.408

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536

$0.408

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Corohmni

South Africa . 347 parts In-Stock

1+ parts

$5.053

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347

$5.053

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Marpe Global Electronics

Taiwan . 6,963 parts In-Stock

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QualityLine Systems

Poland . 6,963 parts In-Stock

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XL Components Corporation

Australia . 6,963 parts In-Stock

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Continental Prestige Electronics

USA . 4,513 parts In-Stock

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Argo Parts USA

USA . 145 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Overview

Unlock a world of possibilities with the 24AA52-I/ST by Microchip Technology, a top-tier EEPROM that guarantees quality and reliability. Ideal for a wide range of applications, this small but powerful memory chip offers unparalleled value and benefits to customers. With an impressive endurance of 1,000,000 write/erase cycles and a maximum clock frequency of 1 MHz, this industrial-grade EEPROM ensures seamless performance and data retention. Trust in Microchip Technology to deliver superior technology that exceeds expectations. Elevate your projects with the 24AA52-I/ST - the perfect choice for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM, making it suitable for various applications in different environments.

Surface Mount: YES

Easy to install and saves space on the circuit board, making it efficient for design and reducing production costs.

Nominal Supply Voltage / Vsup (V): 2.5

Operates at a low voltage, which can be beneficial for power efficiency and extending battery life in portable devices.

Operating Mode: SYNCHRONOUS

Allows for precise timing and control of data transfer, ensuring reliability and accuracy in data storage and retrieval.

Memory Density: 2048 bit

Offers a decent amount of storage capacity, suitable for storing code, configuration data, or small amounts of user information in embedded systems.

Endurance: 1000000 Write/Erase Cycles

High endurance rating ensures longevity and reliability of the EEPROM, making it suitable for applications that require frequent read/write operations.

Technical Specifications

EEPROM 24AA52-I/ST attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.1 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.4 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Programming Voltage (V):

2.5

Qualification:

Not Qualified

Screening Level:

TS 16949

Maximum Seated Height:

1.2 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

24AA52-I/ST Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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