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M24C04-RDS6G

STMicroelectronics

M24C04-RDS6G by STMicroelectronics

M24C04-RDS6G from STMicroelectronics is a 4096-bit EEPROM with I2C interface, ideal for industrial applications. It operates at a supply voltage of 1.8V to 5.5V and features a max clock frequency of 400 kHz. With a temperature range of -40 °C to 85 °C, it ensures reliability in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,975 parts In-Stock

1+ parts

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8,975

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Digiode

USA . 2,639 parts In-Stock

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2,639

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Anansix

USA . 1,323 parts In-Stock

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1,323

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,206 parts In-Stock

1+ parts

$4.951

100+ parts

-

1k+ parts

$4.455

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2,206

$4.951

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$4.455

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MKK Technologies

India . 1,009 parts In-Stock

1+ parts

$9.309

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-

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1,009

$9.309

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DigiPath Technology Company

USA . 1,009 parts In-Stock

1+ parts

$9.309

100+ parts

-

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1,009

$9.309

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AZTECH Wire

Italy . 185 parts In-Stock

1+ parts

$15.180

100+ parts

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185

$15.180

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Microchip USA

USA . 153 parts In-Stock

1+ parts

$32.722

100+ parts

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153

$32.722

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Corphita

USA . 4,563 parts In-Stock

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4,563

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Parana Technologies

USA . 1,273 parts In-Stock

1+ parts

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$5.919

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1,273

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$5.919

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Overview

Elevate your designs with the M24C04-RDS6G EEPROM from STMicroelectronics, renowned for its exceptional quality and reliability. This compact memory solution ensures seamless integration in a variety of applications, from industrial automation to consumer electronics. With excellent endurance and robust performance even in extreme temperatures, it empowers your projects with unmatched efficiency and longevity. Trust STMicroelectronics for innovation that drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This robust material ensures durability and reliability in various applications.

Surface Mount: YES

The surface mount design allows for compact integration on circuit boards, saving space in electronic devices.

Package Shape: SQUARE

The square package shape offers uniform dimensions, making it easy to place accurately in automated assembly processes.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer and efficient memory access, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 2.5

Low nominal supply voltage ensures energy efficiency, making the product suitable for battery-operated devices.

Power Supplies (V): 2/5

The flexibility in power supply voltages accommodates a range of applications, ensuring compatibility with different systems.

No. of Terminals: 8

The 8-terminal configuration facilitates a simple interface, making it user-friendly in various circuit designs.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

This compact package style is ideal for space-constrained applications, such as mobile devices and wearables.

Maximum Operating Temperature: 85 °C

Adequate temperature tolerance ensures reliable performance in industrial applications, even in high-heat environments.

Organization: 512X8

This memory organization provides structured data storage, making it easy to manage and access data efficiently.

Minimum Operating Temperature: -40 °C

Wide temperature range suitability makes this EEPROM ideal for extreme environmental conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

Premium terminal finish improves corrosion resistance and electrical conductivity, enhancing longevity.

I2C Control Byte: 1010DDMR

The I2C control byte simplifies communication and integration with microcontrollers and other devices.

Terminal Position: DUAL

Dual terminal position aids in easier soldering and improves connection reliability on circuit boards.

Write Protection: HARDWARE

Hardware write protection safeguards critical data from unintended modifications, ensuring data integrity.

Maximum Seated Height: 1.1 mm

Low seated height enables better stacking and usability in multi-layer circuit designs.

Maximum Clock Frequency (fCLK): 0.4 MHz

A reasonable clock frequency balances speed and stability, facilitating reliable data transactions.

Width: 3 mm

Compact width makes this EEPROM suitable for small form factor applications.

Minimum Supply Voltage (Vsup): 1.8 V

Operating at a low minimum supply voltage enhances energy efficiency, making it ideal for low-power applications.

Length: 3 mm

Short length complements its width for a compact design, ensuring ease of integration.

Temperature Grade: INDUSTRIAL

Rated for industrial temperatures, making it robust for varied application environments.

Technology: CMOS

CMOS technology enables low power consumption while maintaining high performance.

Parallel or Serial: SERIAL

Serial communication simplifies wiring and allows for more efficient data transfer in controlled environments.

Terminal Form: GULL WING

Gull wing terminal design provides excellent soldering and connection reliability in PCB assembly.

Maximum Supply Current: 0.8 mA

Low supply current consumption ensures longer battery life for portable devices.

No. of Words: 512 words

Adequate memory capacity for many applications, providing ample storage for configuration and data.

Memory Width: 8

8-bit memory width supports efficient data handling for many standard applications.

Minimum Data Retention Time: 40 years

Long data retention time ensures that stored data remains intact for extended periods, critical for applications requiring longevity.

Terminal Pitch: 0.65 mm

A compact terminal pitch is advantageous for high-density PCB layouts and improved space utilization.

No. of Words Code: 512

The coding provides structured access to memory, ensuring organized data management.

Maximum Supply Voltage (Vsup): 5.5 V

High maximum supply voltage allows compatibility with a variety of systems and power sources.

Endurance: 1000000 Write/Erase Cycles

High endurance supports frequent write/erase operations, making it reliable for data logging and dynamic applications.

Serial Bus Type: I2C

The I2C bus type allows multiple devices to be connected via a two-wire interface, enhancing system flexibility.

Maximum Write Cycle Time (tWC): 10 ms

Quick write cycle time ensures fast updates and responsiveness in critical applications.

Memory Density: 4096 bit

Suitable density for diverse applications, providing a balance of performance and storage capacity.

Memory IC Type: EEPROM

EEPROM technology offers non-volatile storage, retaining data even without power.

Maximum Standby Current: 0.000001 Amp

Very low standby current ensures minimal power loss during inactive periods, beneficial for energy-sensitive applications.

Technical Specifications

EEPROM M24C04-RDS6G attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDMR

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Length:

3 mm

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

.8 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE

Trade Compliance

M24C04-RDS6G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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