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M24C08-RDS6G

STMicroelectronics

M24C08-RDS6G by STMicroelectronics

M24C08-RDS6G from STMicroelectronics is a 1Kx8 EEPROM with a wide supply voltage range of 1.8V to 5.5V and an industrial temperature grade (-40 °C to 85 °C). It features I2C interface for synchronous communication and offers up to 1M write/erase cycles, ideal for data storage in compact devices. Its small outline package ensures efficient use of space in electronic applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 10,562 parts In-Stock

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10,562

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Digiode

USA . 1,029 parts In-Stock

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1,029

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Anansix

USA . 86 parts In-Stock

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86

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IDEA Electronic Components Group

UK . 1,059 parts In-Stock

1+ parts

$2.174

100+ parts

-

1k+ parts

$1.957

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$2.174

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$1.957

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MKK Technologies

India . 1,464 parts In-Stock

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$4.088

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$4.088

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DigiPath Technology Company

USA . 1,464 parts In-Stock

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$4.088

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1,464

$4.088

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Microchip USA

USA . 456 parts In-Stock

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$10.281

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456

$10.281

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AZTECH Wire

Italy . 320 parts In-Stock

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$21.180

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320

$21.180

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Corphita

USA . 4,105 parts In-Stock

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Parana Technologies

USA . 1,372 parts In-Stock

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$2.599

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$2.599

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Overview

Experience reliability and performance with the M24C08-RDS6G EEPROM from STMicroelectronics, a leader in innovative technology. Engineered for a wide range of applications, this compact and durable memory solution offers exceptional data retention and endurance, making it ideal for industrial environments. With robust write protection and versatile supply voltage options, you can trust this EEPROM to enhance your designs while maximizing efficiency and longevity. Elevate your projects with ST’s commitment to quality and excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors.

Surface Mount: YES

Surface mount technology allows for compact designs and easier assembly in modern circuits.

Package Shape: SQUARE

Square packages facilitate efficient space usage on PCB layouts.

Operating Mode: SYNCHRONOUS

The synchronous operating mode enhances data transfer speed and reliability.

Nominal Supply Voltage / Vsup (V): 5

A nominal supply voltage of 5V is common and widely supported in various applications.

Power Supplies (V): 2/5

Versatile power supply options (2V and 5V) cater to different electronic designs.

No. of Terminals: 8

Eight terminals provide sufficient connectivity options for various applications.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

This package style is ideal for space-constrained designs.

Maximum Operating Temperature: 85 °C

Rated for 85 °C operation, making it suitable for industrial applications.

Organization: 1KX8

The organization of 1Kx8 allows for efficient data storage and retrieval.

Minimum Operating Temperature: -40 °C

A minimum operating temperature of -40 °C ensures reliability in extreme environments.

Terminal Finish: NICKEL PALLADIUM GOLD

This finish enhances solderability and protects against corrosion.

I2C Control Byte: 1010DMMR

I2C compatibility allows for easy integration into numerous devices.

Terminal Position: DUAL

Dual terminal position provides flexible mounting options.

Write Protection: HARDWARE

Hardware write protection ensures data integrity against accidental writes.

Maximum Seated Height: 1.1 mm

Low profile minimizes the height on the PCB, ideal for compact designs.

Maximum Clock Frequency (fCLK): 0.4 MHz

Suitable clock frequency for standard EEPROM applications.

Width: 3 mm

Compact width aids in designing dense electronic layouts.

Minimum Supply Voltage (Vsup): 1.8 V

Supports lower voltage operation, making it versatile for battery-powered applications.

Length: 3 mm

Short length contributes to space-saving designs.

Temperature Grade: INDUSTRIAL

Industrial grade indicates robustness for various challenging environments.

Technology: CMOS

CMOS technology offers low power consumption and high performance.

Parallel or Serial: SERIAL

Serial communication simplifies the circuit design and reduces pin count.

Terminal Form: GULL WING

Gull wing terminals ensure strong mechanical support and reliable contacts.

Maximum Supply Current: 0.8 mA

Low supply current helps in reducing overall power consumption.

No. of Words: 1024 words

1024 words provide ample storage space for many applications.

Memory Width: 8

An 8-bit memory width matches common data sizes for ease of handling.

Minimum Data Retention Time: 40

Data retention guarantees the integrity of saved information over extended periods.

Terminal Pitch: 0.65 mm

A terminal pitch of 0.65 mm is standard for compact layouts and allows for fine designs.

No. of Words Code: 1K

This indicates a well-structured memory organization for data storage.

Maximum Supply Voltage (Vsup): 5.5 V

A maximum voltage of 5.5V ensures compatibility with various supply systems.

Endurance: 1,000,000 Write/Erase Cycles

High endurance ensures longevity and reliability in frequent data modification scenarios.

Serial Bus Type: I2C

I2C bus type supports multiple devices on a single bus, facilitating integration.

Maximum Write Cycle Time (tWC): 5 ms

A quick write cycle time enhances performance in time-sensitive applications.

Memory Density: 8192 bit

8192 bits of memory density provide ample room for diverse data storage needs.

Memory IC Type: EEPROM

As an EEPROM, it supports non-volatile data storage, perfect for critical data retention.

Maximum Standby Current: 0.000001 Amp

Ultra-low standby current contributes to energy efficiency, especially in battery-operated devices.

Technical Specifications

EEPROM M24C08-RDS6G attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DMMR

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Length:

3 mm

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

.8 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

M24C08-RDS6G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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