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CAT24AA04WI-GT3

Onsemi

CAT24AA04WI-GT3 by Onsemi

CAT24AA04WI-GT3 by Onsemi is an EEPROM with 512x8 organization, operating at 1.8V, and offering 1000000 write/erase cycles. It is ideal for industrial applications requiring a small outline package, synchronous operation, and I2C serial bus communication.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 44,000 parts In-Stock

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Vyrian

USA . 9,744 parts In-Stock

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Digiode

USA . 775 parts In-Stock

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Native Components

USA . 482 parts In-Stock

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$0.058

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$0.055

482

$0.058

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$0.055

Ampacity Inc.

Singapore . 1,045 parts In-Stock

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$2.000

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$2.000

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AZTECH Wire

Italy . 544 parts In-Stock

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$14.880

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Infinite Electronics LLP (Excess)

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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SupplyDigital Components

Austria . 5,655 parts In-Stock

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Kulean Microsystems

USA . 5,631 parts In-Stock

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Kepictronics

USA . 5,250 parts In-Stock

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Problanco Electronics

Mexico . 3,043 parts In-Stock

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Perfect Parts

USA . 2,408 parts In-Stock

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TANS Electronics

Latvia . 2,356 parts In-Stock

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Corphita

USA . 1,073 parts In-Stock

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UHIMA Technologies

Türkiye . 413 parts In-Stock

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Microchip USA

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Northwest PG Solutions

USA . 350 parts In-Stock

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Corohmni

South Africa . 306 parts In-Stock

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Overview

Unlock the power of reliable data storage with the CAT24AA04WI-GT3 EEPROM by Onsemi. Trust in the quality and expertise of Onsemi to deliver top-notch electronic components for all your memory needs. This versatile EEPROM is perfect for a wide range of applications, offering seamless integration and high performance. Benefit from its durability, efficiency, and ease of use, making it a valuable addition to any project. Experience the advantage of superior technology with the CAT24AA04WI-GT3 by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the EEPROM, ensuring reliable operation in various environments.

Surface Mount: YES

Enhances ease of assembly onto circuit boards, making the integration process more efficient.

Operating Mode: SYNCHRONOUS

Allows for synchronized communication and data transfer, reducing the likelihood of errors.

Nominal Supply Voltage / Vsup (V): 1.8

Low power consumption at a nominal voltage of 1.8V, resulting in energy efficiency.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial applications where heat resistance is important.

Endurance: 1000000 Write/Erase Cycles

High endurance rating ensures long-lasting performance and reliability for frequent read/write operations.

Serial Bus Type: I2C

Utilizes I2C communication protocol for serial data transfer, enabling efficient and streamlined connectivity.

Technical Specifications

EEPROM CAT24AA04WI-GT3 attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

101000MR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

CAT24AA04WI-GT3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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