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M24256-BHRDW6TP

STMicroelectronics

M24256-BHRDW6TP by STMicroelectronics

M24256-BHRDW6TP by STMicroelectronics is a 32Kx8 EEPROM with a compact SOIC package, operating b/w -40 °C to 85°C. It features synchronous I2C communication and hardware write protection, making it ideal for industrial applications requiring reliable data storage. With a max clock frequency of 1 MHz and endurance of 1M cycles, it's perfect for demanding environments.

Median Price

-

Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 7,203 parts In-Stock

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Digiode

USA . 993 parts In-Stock

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Anansix

USA . 775 parts In-Stock

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775

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IDEA Electronic Components Group

UK . 554 parts In-Stock

1+ parts

$5.217

100+ parts

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$4.696

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554

$5.217

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Microchip USA

USA . 379 parts In-Stock

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$6.642

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379

$6.642

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MKK Technologies

India . 196 parts In-Stock

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$9.811

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$9.811

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DigiPath Technology Company

USA . 196 parts In-Stock

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$9.811

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196

$9.811

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AZTECH Wire

Italy . 135 parts In-Stock

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$21.510

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135

$21.510

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Corphita

USA . 1,285 parts In-Stock

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Parana Technologies

USA . 367 parts In-Stock

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$6.238

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Overview

Unlock unmatched reliability and performance with the M24256-BHRDW6TP EEPROM from STMicroelectronics. Designed for industrial applications, this compact and power-efficient memory solution ensures exceptional data integrity even in extreme temperatures. With robust write protection and an impressive endurance of over a million cycles, it’s perfect for your high-demand projects. Trust in STMicroelectronics' legacy of innovation for quality you can count on, enhancing your designs with stability and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material enhances durability and resistance to environmental factors, making it suitable for a variety of applications.

Surface Mount: YES

Surface mount capability allows for compact designs and easy integration into modern electronics.

Package Shape: RECTANGULAR

Rectangular shape optimizes space on PCBs and enables high-density mounting.

Operating Mode: SYNCHRONOUS

Synchronous operation facilitates faster data transfers compared to asynchronous modes.

Nominal Supply Voltage / Vsup: 2.5 V

The nominal supply voltage of 2.5 V ensures compatibility with low-power systems, optimizing energy efficiency.

Power Supplies (V): 2/5

Flexible power supply range (2 to 5 V) makes the EEPROM adaptable for various applications.

No. of Terminals: 8

Eight terminals provide a simple connection interface while supporting essential functionality.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

A slim profile package helps in minimizing the footprint and is ideal for space-constrained designs.

Maximum Operating Temperature: 85 °C

An operating temperature of 85 °C ensures reliability in industrial applications where heat is a consideration.

Organization: 32KX8

The organization of 32Kx8 allows for efficient data storage with easy access to individual bytes.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this EEPROM is suitable for harsh environmental conditions.

I2C Control Byte: 1010DDDR

I2C control enables easy integration with a wide range of devices in a multi-master configuration.

Terminal Position: DUAL

Dual terminal positioning supports efficient routing in PCB designs.

Write Protection: HARDWARE

Hardware write protection safeguards critical data against accidental changes or damage.

Maximum Seated Height: 1.2 mm

The low seated height allows for compact layouts, contributing to overall design efficiency.

Maximum Clock Frequency (fCLK): 1 MHz

A maximum clock frequency of 1 MHz provides sufficient data transfer rates for most applications.

Width: 3 mm

Compact width enhances the suitability of this EEPROM for space-critical applications.

Minimum Supply Voltage (Vsup): 1.8 V

Operating at a minimum supply voltage of 1.8 V contributes to lower power consumption.

Length: 4.4 mm

The short length further aids in optimized board layout, making it ideal for miniaturized designs.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures reliability and performance in demanding environments.

Technology: CMOS

CMOS technology allows for low power consumption, making it an excellent choice for battery-powered devices.

Parallel or Serial: SERIAL

Serial communication simplifies connections and helps reduce the number of pins required.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and robust mechanical connections.

Maximum Supply Current: 5 mA

A maximum supply current of 5 mA ensures power efficiency, especially in battery-operated devices.

No. of Words: 32768 words

The high word count supports significant data storage needs for a variety of applications.

Memory Width: 8

An 8-bit memory width allows for straightforward data handling and compatibility with common data structures.

Minimum Data Retention Time: 40

A minimum data retention time of 40 years guarantees long-term data integrity.

Terminal Pitch: 0.65 mm

The narrow terminal pitch allows for high-density packaging and efficient use of PCB space.

No. of Words Code: 32K

The 32K words code capacity makes it versatile for various applications requiring significant memory.

Maximum Supply Voltage (Vsup): 5.5 V

Supporting up to 5.5 V ensures compatibility with a range of power supply configurations.

Endurance: 1000000 Write/Erase Cycles

High endurance rating provides assurance of long-term data storage capabilities.

Serial Bus Type: I2C

Using I2C as the serial bus type simplifies interfacing with microcontrollers and other peripherals.

Maximum Write Cycle Time (tWC): 5 ms

With a fast write cycle time of 5 ms, it enhances overall system responsiveness.

Memory Density: 262144 bit

A memory density of 262144 bits provides ample storage for diverse applications.

Memory IC Type: EEPROM

As an EEPROM, it provides non-volatile memory for retaining data even without power.

Maximum Standby Current: 0.000002 Amp

Extremely low standby current minimizes power consumption in idle states, enhancing overall efficiency.

Technical Specifications

EEPROM M24256-BHRDW6TP attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

Length:

4.4 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000002 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

M24256-BHRDW6TP Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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