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AT24C256N-10SU-2.7

Microchip Technology

AT24C256N-10SU-2.7 by Microchip Technology

AT24C256N-10SU-2.7 by Microchip: 32KX8 organization, 1 MHz clock frequency, 262144 bit memory density. Ideal for industrial applications requiring EEPROM with I2C serial bus and 1000000 write/erase cycles endurance.

Median Price

$4.270

Lifecycle Status

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18

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Tomark Electronics Ltd

UK . 100 parts In-Stock

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$0.470

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Component Electronics Inc.

Canada . 19 parts In-Stock

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DF Sales Co.

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DF Sales Co.

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Velocity Electronics

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Prism Electronics

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Nova Conductors

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Digiode

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LIBRA Elektronik GmbH

Germany . 378 parts In-Stock

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Vyrian

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Mil-Aero Solutions, Inc.

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J2 Sourcing AB

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Component Sense

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NexGen Digital

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Semi Source

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J & M Industries LLC

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Corohmni

South Africa . 917 parts In-Stock

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$4.528

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Aztec Data Supply Inc.

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Ampacity Inc.

Singapore . 650 parts In-Stock

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AZTECH Wire

Italy . 650 parts In-Stock

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Semicontronic

India . 1,330 parts In-Stock

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Lixinc

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Alle Elektronik GmbH

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Continental Prestige Electronics

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S.R.D Solutions

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Fulton Briggs Corp.

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Vigor

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Advanced Electronics

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Supply Digital

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GreenTree Electronics

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Overview

Unlock the power of reliable data storage with the AT24C256N-10SU-2.7 by Microchip Technology. This high-quality EEPROM offers industrial-grade endurance, ensuring your valuable information is safe and secure. Perfect for a wide range of applications, from consumer electronics to industrial automation, this EEPROM provides maximum reliability and ease of use. Trust in Microchip Technology's expertise to deliver exceptional value and performance, making your projects run smoothly and efficiently. Elevate your designs with the AT24C256N-10SU-2.7 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM, making it a reliable choice for long-term use.

Surface Mount: YES

The surface mount feature allows for easy installation on circuit boards, saving space and simplifying the manufacturing process.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient use of space on the circuit board.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures smooth and accurate data transfer, enhancing the performance of the EEPROM.

Nominal Supply Voltage: 5V

The 5V supply voltage provides a stable power source for the EEPROM, ensuring consistent performance.

No. of Terminals: 8

The 8 terminals offer versatile connection options, making it compatible with a wide range of systems.

Package Style: SMALL OUTLINE

The small outline package style saves space and allows for efficient board layout, making it ideal for compact designs.

Maximum Operating Temperature: 85°C

The high operating temperature range ensures reliable performance even in harsh environments.

Organization: 32KX8

The 32KX8 organization allows for efficient storage and retrieval of data, making it suitable for various applications.

Minimum Operating Temperature: -40°C

The low operating temperature range ensures the EEPROM can function in extreme cold conditions.

I2C Control Byte: 10100DDR

The I2C control byte facilitates easy communication and control of the EEPROM, enhancing overall functionality.

Technical Specifications

EEPROM AT24C256N-10SU-2.7 attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Additional Features:

ALSO OPERATES AT 0.4MHZ AT 2.7VMIN SUPPLY

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

10100DDR

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Page Size (words):

64

Parallel or Serial:

SERIAL

Programming Voltage (V):

5

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000006 Amp

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

AT24C256N-10SU-2.7 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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