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M24C64S-FCU6T/T

STMicroelectronics

M24C64S-FCU6T/T by STMicroelectronics

M24C64S-FCU6T/T by STMicroelectronics is a 64Kb EEPROM with I2C interface, ideal for industrial applications. It operates at a supply voltage of 1.8V to 5.5V and features a max clock frequency of 1 MHz. Its compact design ensures efficient use in space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,265 parts In-Stock

1+ parts

-

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1k+ parts

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7,265

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-

-

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ComSIT Distribution GmbH

Germany . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,500

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-

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ComSIT USA

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,500

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Anansix

USA . 2,325 parts In-Stock

1+ parts

-

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2,325

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Digiode

USA . 1,136 parts In-Stock

1+ parts

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1,136

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,836 parts In-Stock

1+ parts

$4.971

100+ parts

-

1k+ parts

$4.474

10k+ parts

-

1,836

$4.971

-

$4.474

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AZTECH Wire

Italy . 1,201 parts In-Stock

1+ parts

$8.380

100+ parts

-

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10k+ parts

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1,201

$8.380

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Microchip USA

USA . 376 parts In-Stock

1+ parts

$8.957

100+ parts

-

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10k+ parts

-

376

$8.957

-

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MKK Technologies

India . 1,679 parts In-Stock

1+ parts

$9.347

100+ parts

-

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1,679

$9.347

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DigiPath Technology Company

USA . 1,679 parts In-Stock

1+ parts

$9.347

100+ parts

-

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-

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1,679

$9.347

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Kepictronics

USA . 11,383 parts In-Stock

1+ parts

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11,383

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Corphita

USA . 3,140 parts In-Stock

1+ parts

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3,140

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Perfect Parts

USA . 224 parts In-Stock

1+ parts

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224

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Parana Technologies

USA . 5 parts In-Stock

1+ parts

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100+ parts

$5.943

1k+ parts

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5

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$5.943

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Overview

Elevate your design with the M24C64S-FCU6T/T EEPROM from STMicroelectronics—a leader in innovation and reliability. With its compact form factor and impressive temperature range, this memory solution seamlessly integrates into diverse applications, ensuring superior performance in industrial environments. Experience swift data access, robust durability, and energy efficiency that empower your projects to thrive while reducing overall costs. Choose quality; choose STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides good durability and moisture resistance, ensuring reliability in various environmental conditions.

Surface Mount: YES

Surface mount technology allows for compact designs and improved assembly efficiency, making it suitable for modern electronics.

Package Shape: SQUARE

A square package shape optimizes circuit board space and simplifies layout design, enabling more efficient use of space.

Operating Mode: SYNCHRONOUS

Synchronous operation can lead to faster data transfer rates, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 1.8

A low nominal supply voltage of 1.8V helps reduce power consumption, making it ideal for battery-powered applications.

No. of Terminals: 4

With only 4 terminals, it simplifies connections and design, contributing to more compact and efficient circuit designs.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The very thin profile and fine pitch of the grid array package facilitate high-density mounting on printed circuit boards.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C allows the EEPROM to function in a variety of conditions, suitable for industrial applications.

Organization: 8KX8

An 8Kx8 organization provides a balance of storage capacity and performance, catering to a variety of applications that require moderate memory size.

Minimum Operating Temperature: -40 °C

The ability to operate at a minimum temperature of -40 °C makes this EEPROM suitable for environments with extreme cold conditions.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient soldering and improved electrical performance in surface-mounted applications.

Maximum Seated Height: 0.3 mm

The low maximum seated height supports space-saving designs and is perfect for compact electronic devices.

Maximum Clock Frequency (fCLK): 1 MHz

A clock frequency of 1 MHz enables decent data transfer rates, making it suitable for standard speed applications.

Width: 0.833 mm

The small width allows the component to fit into tight spaces, crucial for compact electronic devices.

Minimum Supply Voltage (Vsup): 1.7 V

A minimum supply voltage of 1.7V ensures compatibility with low-voltage systems, enhancing versatility in applications.

Length: 0.833 mm

A small length enables effective utilization of circuit space, essential for miniaturized electronic designs.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this EEPROM ensures high reliability and performance in challenging environments.

Technology: CMOS

CMOS technology integrates low power consumption with high performance, making this EEPROM efficient in energy use.

Parallel or Serial: SERIAL

The serial data interface simplifies communication lines and reduces the number of required pins on the PCB.

Terminal Form: BALL

Ball terminal form allows for flexible soldering and provides robust connections for reliable device operation.

No. of Words: 8192 words

With 8192 words of memory, this EEPROM has ample storage for various applications, accommodating different data requirements.

Memory Width: 8

An 8-bit memory width aligns well with standard data bus architectures, simplifying integration into typical systems.

Terminal Pitch: 0.4 mm

A 0.4 mm terminal pitch allows for high-density layouts, maximizing the number of components that can be placed on a PCB.

No. of Words Code: 8K

The designation of 8K in word code supports various memory configurations, making it versatile for different applications.

Maximum Supply Voltage (Vsup): 5.5 V

Supporting a maximum supply voltage of 5.5V provides flexibility in design, accommodating a wide range of power levels.

Serial Bus Type: I2C

The I2C bus type offers simple multi-device communication, enabling easy integration into complex systems.

Maximum Write Cycle Time (tWC): 5 ms

A quick write cycle time of 5 ms provides reasonable performance for applications that require frequent updates.

Memory Density: 65536 bit

With a memory density of 65536 bits, this EEPROM offers efficient storage for applications requiring moderate capacity.

Memory IC Type: EEPROM

As an EEPROM, it provides non-volatile memory storage, ensuring data retention even when power is removed.

Technical Specifications

EEPROM M24C64S-FCU6T/T attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

1 MHz

JESD-30 Code:

S-PBGA-B4

Length:

.833 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

4

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.3 mm

Serial Bus Type:

I2C

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

.833 mm

Maximum Write Cycle Time (tWC):

5 ms

Trade Compliance

M24C64S-FCU6T/T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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