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M24M01-HRMN6TP

STMicroelectronics

M24M01-HRMN6TP by STMicroelectronics

M24M01-HRMN6TP by STMicroelectronics is a 256Kx8 EEPROM with a synchronous operating mode and I2C interface. It operates b/w -40 °C to 85°C, supporting supply voltages from 1.8V to 5.5V. Ideal for industrial applications, it offers high endurance with up to 1M write/erase cycles.

Median Price

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Lifecycle Status

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8

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1k+

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Chip Stock

USA . 9,000 parts In-Stock

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Anansix

USA . 2,754 parts In-Stock

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Vyrian

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Digiode

USA . 1,145 parts In-Stock

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Technoshack Inc.

Canada . 155 parts In-Stock

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Prism Electronics

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J & M Industries LLC

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NexGen Digital

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IDEA Electronic Components Group

UK . 2,184 parts In-Stock

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$4.714

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$4.243

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Microchip USA

USA . 490 parts In-Stock

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$6.679

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MKK Technologies

India . 14 parts In-Stock

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$8.865

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DigiPath Technology Company

USA . 14 parts In-Stock

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$8.865

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AZTECH Wire

Italy . 336 parts In-Stock

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Kepictronics

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A-Z Elektronik GmbH

Germany . 7,259 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,839 parts In-Stock

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Corphita

USA . 3,987 parts In-Stock

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Parana Technologies

USA . 2,006 parts In-Stock

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$5.636

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Perfect Parts

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Overview

Unlock the power of reliable data storage with the M24M01-HRMN6TP EEPROM from STMicroelectronics. Renowned for its quality and innovation, STMicroelectronics delivers a robust solution perfect for industrial applications, offering exceptional endurance and low power consumption. With its compact design and advanced write protection features, this EEPROM ensures secure, efficient performance, making it an ideal choice for your next project. Experience unparalleled reliability and pave the way for your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliable protection for the internal components against environmental factors.

Surface Mount: YES

Surface mount technology allows for compact designs, making it suitable for modern electronic devices with limited space.

Package Shape: RECTANGULAR

The rectangular shape optimizes PCB space and allows for efficient layout in electronic designs.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances performance by ensuring faster data transactions and synchronization with the clock signal.

Nominal Supply Voltage / Vsup: 2.5V

A nominal supply voltage of 2.5V allows compatibility with low-power applications, improving energy efficiency.

Power Supplies (V): 2/5

Flexibility in power supply options increases versatility in design, accommodating various systems.

No. of Terminals: 8

Having 8 terminals facilitates a clear and organized connection layout, simplifying integration into circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to space-saving designs and easier assembly on PCBs.

Maximum Operating Temperature: 85 °C

An operating temperature of up to 85 °C supports industrial applications where higher temperatures may be encountered.

Organization: 256KX8

Offers a well-structured memory organization, providing efficient storage and data access.

Minimum Operating Temperature: -40 °C

The ability to operate in extreme cold conditions expands its usability in demanding environmental settings.

Terminal Finish: NICKEL PALLADIUM GOLD

High-quality terminal finish enhances durability and minimizes contact resistance, ensuring reliability in performance.

I2C Control Byte: 1010DDMR

Supports I2C communication, allowing for easy integration with various microcontrollers and devices.

Terminal Position: DUAL

Dual terminal positioning supports flexible mounting options, facilitating straightforward PCB designs.

Write Protection: HARDWARE

Integrated hardware write protection safeguards data integrity, preventing accidental overwrites.

Maximum Seated Height: 1.75 mm

A low seated height contributes to compact designs and can improve signal integrity for high-speed applications.

Maximum Clock Frequency (fCLK): 1 MHz

1 MHz clock frequency provides a balanced performance for a wide range of applications.

Width: 3.9 mm

Compact width allows for efficient layout and integration into smaller electronic devices.

Minimum Supply Voltage (Vsup): 1.8 V

Low minimum supply voltage enhances compatibility with a variety of low-power systems.

Maximum Time At Peak Reflow Temperature (s): 40

Accommodates modern soldering processes, ensuring reliability during manufacturing.

Peak Reflow Temperature °C: 260

A high peak reflow temperature tolerance ensures robustness during the soldering process.

Length: 4.9 mm

Its small length makes it suitable for compact PCB layouts and high-density electronic assemblies.

Temperature Grade: INDUSTRIAL

Designed for industrial temperature grades, making it reliable for use in harsh environments.

Technology: CMOS

CMOS technology supports low power consumption and high durability, making it ideal for modern applications.

Parallel or Serial: SERIAL

Serial communication reduces pin count and allows for simpler designs and more efficient data transfer.

Terminal Form: GULL WING

Gull wing terminals ensure secure connections on the PCB, enhancing reliability and ease of soldering.

Maximum Supply Current: 5 mA

Low maximum supply current contributes to overall energy efficiency in electronic designs.

No. of Words: 262144 words

A substantial number of words offers ample storage capacity for a wide range of applications.

Memory Width: 8

8-bit memory width design allows for convenient data handling and compatibility with standard architectures.

Minimum Data Retention Time: 40

Extended minimum data retention time ensures data integrity over prolonged periods of power loss.

Terminal Pitch: 1.27 mm

A standard terminal pitch supports compatibility with widespread assembly techniques and equipment.

No. of Words Code: 256K

The clear word count coding makes it easy to understand and integrate into different applications.

Maximum Supply Voltage (Vsup): 5.5 V

Allows flexibility in power supply options, making it adaptable to various system requirements.

Endurance: 1000000 Write/Erase Cycles

High endurance rating indicates durability and reliability for applications requiring frequent data updates.

Serial Bus Type: I2C

Utilizing the I2C bus type promotes simpler inter-device communication and efficient usage of system resources.

Maximum Write Cycle Time (tWC): 5 ms

Fast write cycle time enhances overall performance, enabling quick data updates without delays.

Memory Density: 2097152 bit

High memory density offers extensive data storage within a compact form factor, increasing design flexibility.

Memory IC Type: EEPROM

As an EEPROM, it supports non-volatile data storage, preserving data even when power is removed.

Maximum Standby Current: 0.000001 Amp

Extremely low standby current consumption enhances energy efficiency, making it suitable for battery-operated devices.

Technical Specifications

EEPROM M24M01-HRMN6TP attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDMR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

M24M01-HRMN6TP Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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