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24LC256T-I/SMG

Microchip Technology

24LC256T-I/SMG by Microchip Technology

24LC256T-I/SMG by Microchip Technology is a 32Kx8 EEPROM with 262144-bit memory density. It operates at 3.6V, has a max clock frequency of 0.4 MHz, and supports I2C serial bus type. Ideal for industrial applications requiring reliable data storage with 1000000 write/erase cycles endurance.

Median Price

$1.160

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,100 parts In-Stock

1+ parts

$1.188

100+ parts

$1.133

1k+ parts

$1.078

10k+ parts

-

1,100

$1.188

$1.133

$1.078

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Verical

USA . 1,100 parts In-Stock

1+ parts

-

100+ parts

$1.133

1k+ parts

$1.078

10k+ parts

-

1,100

-

$1.133

$1.078

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 64 parts In-Stock

1+ parts

$1.523

100+ parts

-

1k+ parts

-

10k+ parts

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64

$1.523

-

-

-

VNN

France . 2,571 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,571

-

-

-

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Vyrian

USA . 1,161 parts In-Stock

1+ parts

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1,161

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,623 parts In-Stock

1+ parts

$1.400

100+ parts

$1.365

1k+ parts

$1.358

10k+ parts

-

1,623

$1.400

$1.365

$1.358

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Ampacity Inc.

Singapore . 1,560 parts In-Stock

1+ parts

$1.400

100+ parts

-

1k+ parts

-

10k+ parts

-

1,560

$1.400

-

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Argo Parts USA

USA . 3,978 parts In-Stock

1+ parts

$1.523

100+ parts

-

1k+ parts

-

10k+ parts

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3,978

$1.523

-

-

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Continental Prestige Electronics

USA . 1,885 parts In-Stock

1+ parts

$1.523

100+ parts

-

1k+ parts

-

10k+ parts

$1.492

1,885

$1.523

-

-

$1.492

Corohmni

South Africa . 302 parts In-Stock

1+ parts

$3.293

100+ parts

-

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10k+ parts

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302

$3.293

-

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Aztec Data Supply Inc.

USA . 4,952 parts In-Stock

1+ parts

$4.480

100+ parts

-

1k+ parts

-

10k+ parts

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4,952

$4.480

-

-

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Advanced Electronics

New Zealand . 33 parts In-Stock

1+ parts

$4.933

100+ parts

$4.686

1k+ parts

$4.686

10k+ parts

-

33

$4.933

$4.686

$4.686

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XL Components Corporation

Australia . 5,237 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,237

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QualityLine Systems

Poland . 5,207 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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5,207

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Marpe Global Electronics

Taiwan . 3,887 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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3,887

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Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$1.492

1k+ parts

$1.446

10k+ parts

$1.416

100

-

$1.492

$1.446

$1.416

Overview

Unlock the power of reliable data storage with the Microchip Technology 24LC256T-I/SMG EEPROM. Manufactured by a trusted industry leader, this small outline package offers seamless integration for a wide range of applications. With a high endurance of 1,000,000 write/erase cycles and industrial-grade temperature support, this EEPROM delivers exceptional performance and durability. Whether you're designing automotive systems or consumer electronics, the 24LC256T-I/SMG provides unmatched value, efficiency, and peace of mind for your data storage needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the EEPROM lightweight and durable.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation of the EEPROM onto circuit boards.

Screening Level: AEC-Q100

With AEC-Q100 screening level, this EEPROM is suitable for automotive applications where high reliability is required.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient use of space on circuit boards.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise and synchronized data transfer for reliable performance.

Nominal Supply Voltage / Vsup: 3.6 V

The 3.6V supply voltage provides stable power to the EEPROM for consistent operation.

Power Supplies (V): 3/5

The dual power supply options of 3V and 5V make this EEPROM versatile and compatible with various systems.

No. of Terminals: 8

The 8 terminals allow for easy connectivity and integration of the EEPROM into circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and makes the EEPROM suitable for compact designs.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures the EEPROM can withstand harsh environmental conditions.

Organization: 32KX8

The 32K x 8 organization provides a large memory capacity for storing data efficiently.

Output Characteristics: OPEN-DRAIN

The open-drain output characteristics ensure compatibility with various logic levels for seamless communication.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C allows the EEPROM to function in cold environments.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish enhances the durability and reliability of the terminal connections.

I2C Control Byte: 1010DDDR

The specific I2C control byte simplifies communication and control of the EEPROM within a system.

Terminal Position: DUAL

The dual terminal position allows for flexibility in the orientation and placement of the EEPROM on a circuit board.

Write Protection: HARDWARE

The hardware write protection feature ensures data security by preventing unauthorized write access to the EEPROM.

Maximum Seated Height: 2.03 mm

The low maximum seated height enables the EEPROM to be used in space-constrained applications.

Maximum Clock Frequency (fCLK): 0.4 MHz

The high maximum clock frequency of 0.4 MHz allows for fast data transfer and efficient operation.

Width: 5.25 mm

The compact width of 5.25mm makes the EEPROM suitable for use in small electronic devices.

Minimum Supply Voltage (Vsup): 2.5 V

The minimum supply voltage of 2.5V ensures the EEPROM can operate even in low power conditions.

Maximum Time At Peak Reflow Temperature (s): 40

The maximum time at peak reflow temperature of 40 seconds ensures proper soldering during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures reliable soldering of the EEPROM onto circuit boards.

Length: 5.26 mm

The length of 5.26mm allows for a compact design and easy integration of the EEPROM into electronic systems.

Programming Voltage (V): 4.5

The programming voltage of 4.5V enables easy and efficient programming of data into the EEPROM.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures the EEPROM can operate in a wide range of temperature conditions.

Technology: CMOS

The CMOS technology used in the EEPROM offers low power consumption and high performance.

Parallel or Serial: SERIAL

The serial interface allows for easy integration and communication with other components in a circuit.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections for the EEPROM on circuit boards.

Maximum Supply Current: 3 mA

The low maximum supply current of 3mA ensures efficient power consumption and minimal heat dissipation.

No. of Words: 32768 words

The large number of words storage capacity allows for extensive data storage in the EEPROM.

Memory Width: 8

The memory width of 8 bits enables the EEPROM to store data in byte-sized chunks for easy retrieval.

Minimum Data Retention Time: 200

The minimum data retention time of 200 years ensures long-term storage of data without loss.

Terminal Pitch: 1.27 mm

The terminal pitch of 1.27mm allows for precise and secure connections on circuit boards.

No. of Words Code: 32K

The 32K words code signifies the ample memory capacity of the EEPROM for storing large amounts of data.

Maximum Supply Voltage (Vsup): 5.5 V

The high maximum supply voltage of 5.5V ensures the EEPROM can handle varying power input levels.

Endurance: 1000000 Write/Erase Cycles

The high endurance rating of 1,000,000 write/erase cycles ensures long-lasting performance and data retention.

Serial Bus Type: I2C

The I2C serial bus type allows for easy interfacing and communication with other components in the system.

Maximum Write Cycle Time (tWC): 5 ms

The fast maximum write cycle time of 5ms ensures quick and efficient data writing operations.

Memory Density: 262144 bit

The high memory density of 262,144 bits allows for extensive data storage in a compact EEPROM package.

Memory IC Type: EEPROM

The EEPROM memory IC type offers non-volatile storage capabilities for retaining data even without power.

Maximum Standby Current: 0.0000015 Amp

The extremely low maximum standby current consumption of 0.0000015A ensures minimal power drain when the EEPROM is idle.

Technical Specifications

EEPROM 24LC256T-I/SMG attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

5.26 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Programming Voltage (V):

4.5

Qualification:

Not Qualified

Reverse Pinout:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

2.03 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.0000015 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3.6

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

5.25 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24LC256T-I/SMG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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