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24AA16HT-I/SN

Microchip Technology

24AA16HT-I/SN by Microchip Technology

24AA16HT-I/SN by Microchip Tech is an EEPROM with 256x8 organization, I2C control byte 1010MMMR, and 1000000 write/erase cycles. It operates at -40 to 85 °C, has a max clock frequency of 0.1 MHz, and is used in industrial applications for serial data storage.

Median Price

$0.370

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 22,000 parts In-Stock

1+ parts

$0.370

100+ parts

$0.350

1k+ parts

$0.340

10k+ parts

$0.300

22,000

$0.370

$0.350

$0.340

$0.300

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 19,800 parts In-Stock

1+ parts

$0.400

100+ parts

$0.360

1k+ parts

$0.330

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-

19,800

$0.400

$0.360

$0.330

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Vyrian

USA . 4,207 parts In-Stock

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VNN

France . 1,624 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 921 parts In-Stock

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Bristol Electronics

USA . 921 parts In-Stock

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$0.357

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$0.266

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921

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$0.266

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Dan-Mar Components

USA . 921 parts In-Stock

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921

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Distributors (Availability)

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Corohmni

South Africa . 136 parts In-Stock

1+ parts

$2.782

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136

$2.782

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Ampacity Inc.

Singapore . 1,123 parts In-Stock

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$4.000

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1,123

$4.000

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AZTECH Wire

Italy . 72 parts In-Stock

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$16.810

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72

$16.810

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West Coast Incorporated

USA . 4,247 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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500

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Unlock endless possibilities with the 24AA16HT-I/SN EEPROM by Microchip Technology. Known for its superior quality and reliability, Microchip Technology delivers cutting-edge technology that exceeds industry standards. This versatile memory device is perfect for a wide range of applications, offering fast and efficient data storage solutions. With its high endurance and low power consumption, this EEPROM provides unmatched value and performance for customers seeking top-notch memory solutions. Experience the difference with Microchip Technology and revolutionize your projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for easy handling and long-lasting use.

Surface Mount: YES

Ease of integration into circuit boards, reducing space and improving overall design efficiency.

Screening Level: TS 16949

High-quality standard ensuring reliable performance and adherence to industry requirements.

Operating Mode: SYNCHRONOUS

Synchronous operation for efficient data transfer and synchronization with other components.

Nominal Supply Voltage / Vsup (V): 2.5

Optimal supply voltage for stable and efficient operation.

Memory Density: 2048 bit

High memory density for storing a large amount of data in a compact space.

Memory IC Type: EEPROM

EEPROM technology for non-volatile data storage with easy read/write capability.

Endurance: 1000000 Write/Erase Cycles

High endurance for long-term data retention and frequent read/write operations.

Technical Specifications

EEPROM 24AA16HT-I/SN attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.1 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010MMMR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.23

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Programming Voltage (V):

2.5

Qualification:

Not Qualified

Screening Level:

TS 16949

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24AA16HT-I/SN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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