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M95128-RMB6TG

STMicroelectronics

M95128-RMB6TG by STMicroelectronics

STMicroelectronics M95128-RMB6TG is a 16KX8 EEPROM with SPI serial bus, 131072-bit memory density, and 1000000 write/erase cycles. Operating at -40 to 85 °C, it has a max clock frequency of 2 MHz and supports hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

Median Price

$0.638

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.638

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-

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100

$0.638

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Vyrian

USA . 5,311 parts In-Stock

1+ parts

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5,311

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Digiode

USA . 4,797 parts In-Stock

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4,797

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Anansix

USA . 1,972 parts In-Stock

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1,972

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.625

100+ parts

-

1k+ parts

$0.600

10k+ parts

-

2,000

$0.625

-

$0.600

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Corohmni

South Africa . 324 parts In-Stock

1+ parts

$0.638

100+ parts

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324

$0.638

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Argo Parts USA

USA . 4,353 parts In-Stock

1+ parts

$0.638

100+ parts

-

1k+ parts

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10k+ parts

$0.619

4,353

$0.638

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-

$0.619

Continental Prestige Electronics

USA . 2,741 parts In-Stock

1+ parts

$0.638

100+ parts

-

1k+ parts

-

10k+ parts

$0.625

2,741

$0.638

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-

$0.625

Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$0.651

100+ parts

$0.651

1k+ parts

$0.651

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-

20

$0.651

$0.651

$0.651

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IDEA Electronic Components Group

UK . 1,879 parts In-Stock

1+ parts

$4.433

100+ parts

-

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$3.990

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1,879

$4.433

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$3.990

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Aztec Data Supply Inc.

USA . 3,490 parts In-Stock

1+ parts

$4.567

100+ parts

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3,490

$4.567

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MKK Technologies

India . 252 parts In-Stock

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$8.337

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252

$8.337

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DigiPath Technology Company

USA . 252 parts In-Stock

1+ parts

$8.337

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252

$8.337

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Semicontronic

India . 1,092 parts In-Stock

1+ parts

$12.000

100+ parts

$11.700

1k+ parts

$11.640

10k+ parts

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1,092

$12.000

$11.700

$11.640

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AZTECH Wire

Italy . 767 parts In-Stock

1+ parts

$13.870

100+ parts

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767

$13.870

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Ampacity Inc.

Singapore . 954 parts In-Stock

1+ parts

$29.000

100+ parts

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954

$29.000

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Microchip USA

USA . 235 parts In-Stock

1+ parts

$41.187

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235

$41.187

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QUARKTWIN TECHNOLOGY LTD

USA . 18,697 parts In-Stock

1+ parts

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18,697

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Corphita

USA . 1,153 parts In-Stock

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1,153

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Parana Technologies

USA . 638 parts In-Stock

1+ parts

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$5.301

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638

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$5.301

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Overview

Unlock the power of STMicroelectronics' M95128-RMB6TG EEPROM, a cutting-edge memory solution for industrial applications. With a high endurance of 1,000,000 write/erase cycles and a wide operating temperature range, this compact and reliable device offers unmatched reliability and performance. Perfect for embedded systems and data storage, the M95128-RMB6TG ensures seamless operation and data integrity. Trust STMicroelectronics for superior quality and innovation in memory technology. Elevate your product's performance with the M95128-RMB6TG EEPROM today.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy installation on PCBs, saving space and simplifying manufacturing process.

Package Shape: RECTANGULAR

Provides a standard form factor for compatibility with various devices and systems.

Operating Mode: SYNCHRONOUS

Enables fast and efficient communication with other components in the system.

Nominal Supply Voltage / Vsup (V): 2.5

Works within a common voltage range, suitable for a wide range of applications.

Power Supplies (V): 2/5

Allows for flexibility in power input options, accommodating different power sources.

No. of Terminals: 8

Provides an adequate number of connections for interfacing with other components in the system.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Offers a compact and thermal-efficient design for space-constrained applications.

Maximum Operating Temperature: 85 °C

Can operate reliably in high-temperature environments, suitable for industrial use.

Organization: 16KX8

Provides a good balance of storage capacity and data organization for efficient data handling.

Minimum Operating Temperature: -40 °C

Can withstand extremely low temperatures, ideal for use in harsh environments.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Ensures reliable connections and corrosion resistance for long-term performance.

Terminal Position: DUAL

Facilitates easy integration and compatibility with various board layouts.

Write Protection: HARDWARE/SOFTWARE

Offers multiple layers of protection for data security and integrity.

Maximum Seated Height: 0.6 mm

Low-profile design for applications with height restrictions.

Maximum Clock Frequency (fCLK): 2 MHz

Supports high-speed data transfer for quick access to stored information.

Width: 2 mm

Compact form factor for versatile placement in different devices or systems.

Minimum Supply Voltage (Vsup): 1.8 V

Low power operation for energy-efficient use in portable or battery-powered devices.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for reliable soldering during manufacturing processes.

Peak Reflow Temperature °C: 260

Withstands high temperatures during soldering without damage to the component.

Length: 3 mm

Standard length for easy integration and compatibility with standard PCB designs.

Temperature Grade: INDUSTRIAL

Meets industry standards for reliability and performance in demanding environments.

Technology: CMOS

Utilizes low-power technology for efficient operation and extended battery life.

Parallel or Serial: SERIAL

Enables simple and streamlined data transfer for easy integration with other components.

Terminal Form: NO LEAD

Environmentally friendly and compliant with lead-free regulations.

Maximum Supply Current: 3 mA

Low power consumption for energy-efficient operation.

No. of Words: 16384 words

Offers ample storage capacity for storing data and information.

Memory Width: 8

Supports data organization in bytes, ideal for typical data handling applications.

Minimum Data Retention Time: 40

Ensures data integrity and reliability over extended periods of time.

Terminal Pitch: 0.5 mm

Fine pitch spacing for compact and space-saving designs.

No. of Words Code: 16K

Specifies the capacity of the memory for easy identification and integration.

Maximum Supply Voltage (Vsup): 5.5 V

Provides a wide operating voltage range for flexibility in power supply options.

Endurance: 1000000 Write/Erase Cycles

Offers high endurance for frequent read/write operations without data degradation.

Serial Bus Type: SPI

Utilizes a common industry-standard communication protocol for compatibility with various systems.

Maximum Write Cycle Time (tWC): 5 ms

Fast write speeds for efficient data storage and retrieval.

Memory Density: 131072 bit

High memory density for storing a large amount of data in a compact form factor.

Memory IC Type: EEPROM

Offers non-volatile memory storage with electrically erasable programmable read-only memory.

Maximum Standby Current: 0.000003 Amp

Ultra-low standby current for minimal power consumption in idle mode.

Technical Specifications

EEPROM M95128-RMB6TG attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

2 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-XDSO-N8

JESD-609 Code:

e4

Length:

3 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16KX8

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

.6 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000003 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M95128-RMB6TG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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