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CAT24AA08WI-GT3

Onsemi

CAT24AA08WI-GT3 by Onsemi

CAT24AA08WI-GT3 by Onsemi is an 8-terminal EEPROM with 1KX8 organization, operating at 1.8V and 5V. It features I2C control byte, hardware write protection, and endurance of 1M cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 65,000 parts In-Stock

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Vyrian

USA . 8,704 parts In-Stock

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Digiode

USA . 1,727 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 407 parts In-Stock

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407

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Bristol Electronics

USA . 407 parts In-Stock

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407

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Dan-Mar Components

USA . 407 parts In-Stock

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407

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Native Components

USA . 635 parts In-Stock

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$1.670

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635

$1.670

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Northwest PG Solutions

USA . 805 parts In-Stock

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$1.837

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805

$1.837

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$3.007

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$2.736

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$2.466

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3,000

$3.007

$2.736

$2.466

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Corohmni

South Africa . 130 parts In-Stock

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$4.404

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130

$4.404

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AZTECH Wire

Italy . 161 parts In-Stock

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$17.710

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$17.710

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RC Electronics

USA . 9,000 parts In-Stock

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Kulean Microsystems

USA . 7,530 parts In-Stock

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TANS Electronics

Latvia . 6,883 parts In-Stock

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SupplyDigital Components

Austria . 6,526 parts In-Stock

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Perfect Parts

USA . 6,002 parts In-Stock

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Kepictronics

USA . 5,240 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Problanco Electronics

Mexico . 3,434 parts In-Stock

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Corphita

USA . 2,193 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,200 parts In-Stock

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UHIMA Technologies

Türkiye . 332 parts In-Stock

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Microchip USA

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Overview

Unlock the power of reliable data storage with the CAT24AA08WI-GT3 by Onsemi. This high-quality EEPROM is designed to meet the demands of industrial applications, offering durability and efficiency. With a focus on ease of use and long-term performance, Onsemi delivers a product that provides value and peace of mind to customers. Trust in the expertise of the manufacturer and experience seamless data management with the CAT24AA08WI-GT3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body makes the EEPROM durable and resistant to external factors, ensuring a longer lifespan.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for precise control and timing, making data transfer more efficient and reliable.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low voltage of 1.8V helps in reducing power consumption and heat generation, making the EEPROM energy-efficient.

No. of Terminals: 8

Having 8 terminals provides flexibility in connecting the EEPROM to other components or devices, allowing for versatile integration.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures the EEPROM can function reliably in various environmental conditions.

Memory Density: 8192 bit

With a memory density of 8192 bits, this EEPROM can store a large amount of data in a compact form, making it suitable for applications requiring storage space.

Endurance: 1000000 Write/Erase Cycles

The high endurance of 1,000,000 write/erase cycles ensures long-term reliability and durability, making this EEPROM a reliable choice for frequent data read/write operations.

Technical Specifications

EEPROM CAT24AA08WI-GT3 attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

10100MMR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

CAT24AA08WI-GT3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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