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24LC01BT-E/MNY

Microchip Technology

24LC01BT-E/MNY by Microchip Technology

24LC01BT-E/MNY by Microchip Technology is an EEPROM with 128x8 organization, 1024-bit memory density, and AEC-Q100 screening for automotive applications. It operates at 5V with a max clock frequency of 0.4 MHz and offers 1,000,000 write/erase cycles endurance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,217 parts In-Stock

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6,217

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VNN

France . 5,427 parts In-Stock

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5,427

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Nova Conductors

Japan . 49 parts In-Stock

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49

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,644 parts In-Stock

1+ parts

$3.001

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2,644

$3.001

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Corohmni

South Africa . 353 parts In-Stock

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$3.870

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353

$3.870

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Ampacity Inc.

Singapore . 764 parts In-Stock

1+ parts

$10.000

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764

$10.000

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AZTECH Wire

Italy . 309 parts In-Stock

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$19.468

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309

$19.468

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Argo Parts USA

USA . 4,608 parts In-Stock

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4,608

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Continental Prestige Electronics

USA . 4,605 parts In-Stock

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4,605

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Fulton Briggs Corp.

USA . 1,288 parts In-Stock

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1,288

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Lixinc

USA . 361 parts In-Stock

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361

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Unlock the power of reliable data storage with the 24LC01BT-E/MNY by Microchip Technology. With a reputation for top-notch quality and innovation, Microchip Technology delivers cutting-edge EEPROM technology perfect for automotive applications and beyond. This compact, high-performance memory solution offers customers peace of mind with its durable construction, easy interface, and lasting endurance of 1,000,000 write/erase cycles. Trust in Microchip Technology to provide the value and efficiency you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM, making it suitable for harsh environments.

Operating Mode: SYNCHRONOUS

The synchronous operation allows for precise timing and coordination between the EEPROM and other components in the system, ensuring efficient data transfer.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage ensures compatibility with many systems and simplifies integration.

Maximum Operating Temperature: 125 °C

The high operating temperature range makes this EEPROM suitable for automotive and industrial applications where temperature fluctuations are common.

Memory Density: 1024 bit

With a high memory density, this EEPROM can store a large amount of data in a compact form factor, making it efficient for data storage applications.

Technical Specifications

EEPROM 24LC01BT-E/MNY attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010XXXR

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Length:

3 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

.8 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000005 Amp

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

2 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24LC01BT-E/MNY Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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