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24LC04BHT-E/SN

Microchip Technology

24LC04BHT-E/SN by Microchip Technology

24LC04BHT-E/SN by Microchip Technology is an EEPROM with 512x8 organization, operating at 5V. It features I2C control byte 1010XXMR and offers hardware write protection. With a memory density of 4096 bit, it's ideal for automotive applications due to AEC-Q100 screening level and -40 to 125°C operating temperature range.

Median Price

$0.445

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.445

100+ parts

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150

$0.445

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Vyrian

USA . 8,038 parts In-Stock

1+ parts

-

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1k+ parts

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8,038

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VNN

France . 2,209 parts In-Stock

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2,209

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 1,903 parts In-Stock

1+ parts

$0.445

100+ parts

-

1k+ parts

-

10k+ parts

$0.432

1,903

$0.445

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-

$0.432

Continental Prestige Electronics

USA . 714 parts In-Stock

1+ parts

$0.445

100+ parts

-

1k+ parts

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10k+ parts

$0.436

714

$0.445

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-

$0.436

Ampacity Inc.

Singapore . 851 parts In-Stock

1+ parts

$9.000

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851

$9.000

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AZTECH Wire

Italy . 824 parts In-Stock

1+ parts

$15.281

100+ parts

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824

$15.281

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Fulton Briggs Corp.

USA . 8,252 parts In-Stock

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8,252

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Overview

Unlock the power of reliable data storage with the 24LC04BHT-E/SN EEPROM from Microchip Technology. Designed to meet AEC-Q100 standards, this small outline package offers 512x8 organization, making it perfect for automotive applications. With a minimum data retention time of 200 years and 1,000,000 write/erase cycles, this EEPROM ensures long-lasting performance and durability. Trust in Microchip Technology's cutting-edge technology and quality assurance for your next project's memory needs. Elevate your design with the 24LC04BHT-E/SN and experience seamless data storage like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the EEPROM light-weight and durable, suitable for various applications.

Surface Mount: YES

Being surface mountable, this EEPROM can be easily integrated onto circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage ensures stable and reliable operation of the EEPROM.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for precise timing and control, improving overall performance.

Technology: CMOS

The use of CMOS technology ensures low power consumption and high speed operation.

Endurance: 1000000 Write/Erase Cycles

With a high endurance level, this EEPROM can withstand frequent read and write operations for a long duration.

Serial Bus Type: I2C

The I2C serial bus interface provides easy communication with other devices, making it versatile and compatible with a wide range of systems.

Technical Specifications

EEPROM 24LC04BHT-E/SN attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Data Polling:

YES

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010XXMR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512X8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.23

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Page Size (words):

16

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Programming Voltage (V):

5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24LC04BHT-E/SN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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