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24LC64T-E/SM

Microchip Technology

24LC64T-E/SM by Microchip Technology

24LC64T-E/SM by Microchip Technology is an EEPROM with 8KX8 organization, 65536 bit memory density, and 1000000 Write/Erase Cycles endurance. It operates in synchronous mode at a max clock frequency of 0.4 MHz and is ideal for automotive applications requiring reliable non-volatile memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,739 parts In-Stock

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VNN

France . 2,499 parts In-Stock

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2,499

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Huijzer Components

Netherlands . 1,260 parts In-Stock

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1,260

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Nova Conductors

Japan . 92 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,244 parts In-Stock

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$4.910

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$4.910

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Corohmni

South Africa . 514 parts In-Stock

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$5.584

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514

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AZTECH Wire

Italy . 843 parts In-Stock

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$5.800

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843

$5.800

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Ampacity Inc.

Singapore . 1,156 parts In-Stock

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$30.000

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$30.000

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Continental Prestige Electronics

USA . 7,000 parts In-Stock

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West Coast Incorporated

USA . 5,891 parts In-Stock

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Argo Parts USA

USA . 3,878 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Unlock the potential of your automotive applications with the 24LC64T-E/SM from Microchip Technology. This high-quality EEPROM offers a reliable and durable solution for your memory storage needs. With a wide operating temperature range and AEC-Q100 screening level, this product ensures optimal performance even in challenging environments. Trust in the expertise of Microchip Technology to deliver superior products that provide lasting value and benefits to your projects. Choose the 24LC64T-E/SM for dependable memory storage in your automotive designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the EEPROM, ensuring long-term reliability and performance.

Operating Mode: SYNCHRONOUS

Allows for efficient and synchronized data transfer within the EEPROM, enhancing overall speed and operation.

Nominal Supply Voltage / Vsup (V): 4.5

Optimal supply voltage for stable and consistent performance of the EEPROM.

I2C Control Byte: 1010DDDR

Follows the I2C protocol for efficient communication and control of the EEPROM in various applications.

Endurance: 1000000 Write/Erase Cycles

High number of write/erase cycles ensures reliability and longevity of the EEPROM for multiple data storage and retrieval operations.

Technical Specifications

EEPROM 24LC64T-E/SM attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Additional Features:

DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

5.245 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Programming Voltage (V):

4.5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

2.03 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

5.25 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24LC64T-E/SM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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