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CAT25M01VE-GT3

Onsemi

CAT25M01VE-GT3 by Onsemi

CAT25M01VE-GT3 by Onsemi is a 128KX8 EEPROM with 1048576 bit memory density. It operates at 5V, has a clock frequency of 10 MHz, and uses SPI serial bus type. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and small outline package style.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 49,000 parts In-Stock

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Vyrian

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Digiode

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Native Components

USA . 137 parts In-Stock

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$1.002

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Northwest PG Solutions

USA . 52 parts In-Stock

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Corohmni

South Africa . 306 parts In-Stock

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$3.029

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Advanced Electronics

New Zealand . 97 parts In-Stock

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$6.663

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$6.063

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$5.464

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AZTECH Wire

Italy . 62 parts In-Stock

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$18.580

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TANS Electronics

Latvia . 7,980 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 2,398 parts In-Stock

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SupplyDigital Components

Austria . 1,878 parts In-Stock

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UHIMA Technologies

Türkiye . 811 parts In-Stock

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Corphita

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Robosynatics

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Lucentia Tech

USA . 500 parts In-Stock

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Microchip USA

USA . 244 parts In-Stock

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Overview

Enhance your automotive electronics with the CAT25M01VE-GT3 EEPROM by Onsemi. With a trusted manufacturer like Onsemi, you can expect top-notch quality and reliability. This versatile memory device is perfect for a wide range of applications, offering seamless integration and efficient performance. Unlock the value of this product with its fast write cycle time, high memory density, and user-friendly SPI serial bus interface. Upgrade your automotive systems with the CAT25M01VE-GT3 and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components of the EEPROM, making it suitable for various environments.

Surface Mount: YES

Allows for easy installation of the EEPROM on circuit boards, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Enables efficient data transfer and communication between devices, leading to faster performance.

Nominal Supply Voltage / Vsup (V): 5

Stable voltage supply ensures reliable operation of the EEPROM at the specified voltage level.

No. of Terminals: 8

Simple and straightforward connection setup for interfacing the EEPROM with other components in a circuit.

Maximum Operating Temperature: 125 °C

Wide temperature range allows the EEPROM to function optimally in both regular and extreme temperature conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the EEPROM energy-efficient and reliable.

Memory Density: 1048576 bit

High memory capacity allows for storing a large amount of data in the EEPROM, making it suitable for complex applications.

Technical Specifications

EEPROM CAT25M01VE-GT3 attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

10 MHz

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Trade Compliance

CAT25M01VE-GT3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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