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CAT25010VE-GT3D

Onsemi

CAT25010VE-GT3D by Onsemi

CAT25010VE-GT3D by Onsemi is an EEPROM with 128x8 organization, 1024-bit memory density, and SPI serial bus type. It operates at a max clock frequency of 10 MHz and has a write protection feature. Ideal for automotive applications due to its temperature grade and endurance of 1M Write/Erase cycles.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

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Vyrian

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Digiode

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Native Components

USA . 558 parts In-Stock

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Northwest PG Solutions

USA . 1,420 parts In-Stock

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$9.395

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AZTECH Wire

Italy . 690 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,460 parts In-Stock

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Problanco Electronics

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TANS Electronics

Latvia . 7,452 parts In-Stock

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Microchip USA

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Kulean Microsystems

USA . 4,598 parts In-Stock

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Corphita

USA . 1,997 parts In-Stock

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SupplyDigital Components

Austria . 1,923 parts In-Stock

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UHIMA Technologies

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Overview

Unlock unparalleled performance and reliability with the CAT25010VE-GT3D EEPROM by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and cutting-edge technology in all their products. The CAT25010VE-GT3D is perfect for automotive applications, offering exceptional endurance with 1,000,000 write/erase cycles. With a compact design and serial bus type SPI, this EEPROM delivers fast and efficient data storage capabilities. Trust Onsemi to provide you with the best-in-class solution for your memory needs. Experience the difference with the CAT25010VE-GT3D today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for electronic components, providing durability and protection for the EEPROM chip.

Nominal Supply Voltage / Vsup (V): 5

Having a standard supply voltage of 5V makes it compatible with a wide range of systems and applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this EEPROM can withstand harsh environments and extended use.

Organization: 128X8

The organization of 128 words with a width of 8 bits allows for efficient storage and retrieval of data.

Write Protection: HARDWARE/SOFTWARE

With both hardware and software write protection options, this EEPROM offers flexibility in data security measures.

Temperature Grade: AUTOMOTIVE

Being automotive-grade means that this EEPROM is designed to meet the rigorous requirements and environmental conditions of automotive applications.

Endurance: 1000000 Write/Erase Cycles

High endurance of write/erase cycles ensures longevity and reliability of data storage in the EEPROM.

Serial Bus Type: SPI

Using Serial Peripheral Interface (SPI) bus type allows for fast and efficient communication with other devices.

Technical Specifications

EEPROM CAT25010VE-GT3D attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 5MHZ AT 1.8MIN

Maximum Clock Frequency (fCLK):

10 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000002 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CAT25010VE-GT3D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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