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CAT25040LI-GD

Onsemi

CAT25040LI-GD by Onsemi

CAT25040LI-GD by Onsemi is an EEPROM with 512x8 organization, SPI serial bus type, and 10 MHz clock frequency. It operates at -40 to 85 °C, has a 5V nominal voltage, and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 53,000 parts In-Stock

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Vyrian

USA . 10,423 parts In-Stock

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Digiode

USA . 1,019 parts In-Stock

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Native Components

USA . 625 parts In-Stock

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$6.445

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AZTECH Wire

Italy . 381 parts In-Stock

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$9.820

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QUARKTWIN TECHNOLOGY LTD

USA . 19,960 parts In-Stock

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SupplyDigital Components

Austria . 5,075 parts In-Stock

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Microchip USA

USA . 4,465 parts In-Stock

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Kulean Microsystems

USA . 4,445 parts In-Stock

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Problanco Electronics

Mexico . 2,311 parts In-Stock

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Corphita

USA . 1,988 parts In-Stock

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Northwest PG Solutions

USA . 1,913 parts In-Stock

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TANS Electronics

Latvia . 1,456 parts In-Stock

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UHIMA Technologies

Türkiye . 638 parts In-Stock

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Corohmni

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Overview

Unlock the power of reliable data storage with the CAT25040LI-GD by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and performance. This EEPROM device offers endless possibilities for applications in various industries, providing a seamless experience with its advanced features and technology. Experience peace of mind knowing your data is safe and secure with the CAT25040LI-GD, offering high endurance and reliability. Upgrade your systems today and enjoy the benefits of superior data management with Onsemi's innovative product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the EEPROM, making it suitable for various industrial applications.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for precise and coordinated data transfer, ensuring reliable performance in data storage and retrieval.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures the EEPROM operates efficiently and reliably within the specified power range.

Write Protection: HARDWARE/SOFTWARE

The availability of both hardware and software write protection options adds an extra layer of security to prevent unauthorized data modification or deletion.

Maximum Clock Frequency (fCLK): 10 MHz

The high maximum clock frequency of 10 MHz enables fast data transfer and processing speeds, making the EEPROM suitable for applications requiring quick access to stored information.

Endurance: 1000000 Write/Erase Cycles

With a high endurance rating of 1,000,000 write/erase cycles, this EEPROM offers reliable and long-lasting data storage capabilities for repeated use.

Serial Bus Type: SPI

Utilizing the SPI serial bus type allows for efficient and streamlined communication between the EEPROM and other devices, enhancing compatibility and data transfer efficiency.

Technical Specifications

EEPROM CAT25040LI-GD attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

10 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e4

Length:

9.27 mm

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

5.33 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000002 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CAT25040LI-GD Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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