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CAT25010ZI-GT3D

Onsemi

CAT25010ZI-GT3D by Onsemi

CAT25010ZI-GT3D by Onsemi is an EEPROM with 128x8 organization, SPI serial bus type, and 1024-bit memory density. Operating at -40 to 85 °C, it offers 1000000 write/erase cycles endurance. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 45,000 parts In-Stock

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Vyrian

USA . 6,583 parts In-Stock

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Digiode

USA . 1,460 parts In-Stock

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Native Components

USA . 199 parts In-Stock

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$0.790

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Northwest PG Solutions

USA . 1,346 parts In-Stock

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$0.869

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$0.869

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AZTECH Wire

Italy . 485 parts In-Stock

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$9.210

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Component Stockers USA

USA . 616 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 8,072 parts In-Stock

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TANS Electronics

Latvia . 7,658 parts In-Stock

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Microchip USA

USA . 6,391 parts In-Stock

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SupplyDigital Components

Austria . 6,354 parts In-Stock

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Problanco Electronics

Mexico . 3,086 parts In-Stock

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Corphita

USA . 1,934 parts In-Stock

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Corohmni

South Africa . 137 parts In-Stock

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UHIMA Technologies

Türkiye . 95 parts In-Stock

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Overview

Unlock endless possibilities with the CAT25010ZI-GT3D EEPROM by Onsemi. Crafted with precision and quality, this versatile memory module offers unparalleled reliability and performance for a wide range of applications. Whether you're designing IoT devices, automotive systems, or industrial equipment, this EEPROM's advanced features, including hardware/software write protection and high endurance, ensure your data is secure and accessible when you need it most. Trust Onsemi to deliver cutting-edge technology that empowers your creations to reach new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the EEPROM, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Allows for easy and secure installation on PCBs, saving space and making the product suitable for compact designs.

Operating Mode: SYNCHRONOUS

Enables efficient data transfer and communication with other synchronous devices in the system.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage level, ensuring compatibility with most systems and devices.

Memory IC Type: EEPROM

Being an EEPROM, this product offers non-volatile memory storage, allowing data retention even when power is turned off.

Technical Specifications

EEPROM CAT25010ZI-GT3D attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

10 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Length:

3 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000002 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CAT25010ZI-GT3D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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