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CAT24M01YE-GT3

Onsemi

CAT24M01YE-GT3 by Onsemi

CAT24M01YE-GT3 by Onsemi is an EEPROM with 128KX8 organization, operating at 3.3V. It offers 1MHz clock frequency, SPI serial bus type, and 1000000 write/erase cycles endurance. Ideal for automotive applications due to its -40 to 125 °C temperature range and small outline package style.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 76,000 parts In-Stock

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Vyrian

USA . 7,776 parts In-Stock

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Digiode

USA . 299 parts In-Stock

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Native Components

USA . 471 parts In-Stock

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$4.990

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AZTECH Wire

Italy . 230 parts In-Stock

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$15.750

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SupplyDigital Components

Austria . 8,142 parts In-Stock

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Kulean Microsystems

USA . 8,015 parts In-Stock

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TANS Electronics

Latvia . 4,175 parts In-Stock

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Corphita

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Kepictronics

USA . 1,490 parts In-Stock

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 428 parts In-Stock

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Problanco Electronics

Mexico . 373 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 212 parts In-Stock

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Northwest PG Solutions

USA . 14 parts In-Stock

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Overview

Experience the unmatched quality and reliability of the CAT24M01YE-GT3 EEPROM by Onsemi. Designed with precision and expertise, this versatile memory device offers endless possibilities in various applications. From automotive to industrial settings, this EEPROM provides secure data storage and quick access, ensuring smooth operations and efficiency. Trust in Onsemi's reputation for excellence and innovation, and unlock the potential of your projects with the CAT24M01YE-GT3. Upgrade your systems today and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product long-lasting and reliable.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard voltage level, ensuring compatibility with a wide range of devices.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for various operating environments.

Organization: 128KX8

Offers a large storage capacity with efficient organization, allowing for storing a significant amount of data.

I2C Control Byte: 1010DDMR

Provides a specific control byte for I2C communication, facilitating easy integration into I2C bus systems.

Endurance: 1000000 Write/Erase Cycles

Has a high endurance level, allowing for frequent write and erase operations without degradation in performance.

Serial Bus Type: SPI

Utilizes the popular SPI interface for data transfer, ensuring compatibility with a wide range of microcontrollers and devices.

Technical Specifications

EEPROM CAT24M01YE-GT3 attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDMR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.4 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

CAT24M01YE-GT3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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