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CAT24C02WE-GT3A

Onsemi

CAT24C02WE-GT3A by Onsemi

CAT24C02WE-GT3A by Onsemi is an EEPROM with 256x8 organization, operating at 3.3V. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for automotive applications due to its small outline package style and wide temperature range of -40 to 125 °C.

Median Price

$4.970

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$4.970

100+ parts

$4.523

1k+ parts

$4.075

10k+ parts

-

500

$4.970

$4.523

$4.075

-

Distributors (In-Stock)

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Digiode

USA . 1,568 parts In-Stock

1+ parts

$4.722

100+ parts

-

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1,568

$4.722

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Chip Stock

USA . 33,000 parts In-Stock

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33,000

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Vyrian

USA . 12,279 parts In-Stock

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12,279

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Speed Components Ltd

Israel . 19 parts In-Stock

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19

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Distributors (Availability)

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Native Components

USA . 63 parts In-Stock

1+ parts

$0.225

100+ parts

-

1k+ parts

-

10k+ parts

$0.216

63

$0.225

-

-

$0.216

Northwest PG Solutions

USA . 228 parts In-Stock

1+ parts

$0.248

100+ parts

-

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$0.218

228

$0.248

-

-

$0.218

Corphita

USA . 255 parts In-Stock

1+ parts

$4.473

100+ parts

-

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255

$4.473

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Corohmni

South Africa . 130 parts In-Stock

1+ parts

$4.812

100+ parts

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130

$4.812

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$4.970

100+ parts

$4.523

1k+ parts

$4.075

10k+ parts

-

500

$4.970

$4.523

$4.075

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AZTECH Wire

Italy . 685 parts In-Stock

1+ parts

$18.430

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685

$18.430

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Problanco Electronics

Mexico . 5,926 parts In-Stock

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5,926

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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SupplyDigital Components

Austria . 4,572 parts In-Stock

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4,572

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Kulean Microsystems

USA . 4,182 parts In-Stock

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4,182

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TANS Electronics

Latvia . 2,448 parts In-Stock

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2,448

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Kepictronics

USA . 2,220 parts In-Stock

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2,220

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Microchip USA

USA . 489 parts In-Stock

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489

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UHIMA Technologies

Türkiye . 127 parts In-Stock

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127

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Overview

Discover the CAT24C02WE-GT3A by Onsemi, a top-quality EEPROM that offers reliability and performance. Manufactured by Onsemi, a trusted name in electronics, this product is perfect for a wide range of applications. With its small outline package and hardware write protection, it ensures data security and longevity. Whether you're in automotive or industrial settings, this EEPROM provides value and convenience with its low power consumption and high endurance. Upgrade your system with the CAT24C02WE-GT3A and experience seamless operation and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the EEPROM, ensuring a longer lifespan.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a standard voltage, suitable for various applications.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for automotive and industrial environments.

Endurance: 1000000 Write/Erase Cycles

Offers a high number of write/erase cycles, ensuring reliability and longevity of data storage.

Memory Density: 2048 bit

Provides sufficient storage capacity for data, ideal for small-scale applications.

Technical Specifications

EEPROM CAT24C02WE-GT3A attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

CAT24C02WE-GT3A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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