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11AA160T-I/CS16K

Microchip Technology

11AA160T-I/CS16K by Microchip Technology

Microchip Technology's 11AA160T-I/CS16K is a 2Kx8 EEPROM with 16384-bit memory density. Operating at 5V, it offers synchronous mode and serial interface with software write protection. Ideal for industrial applications, it has a max clock frequency of 3MHz and endurance of 1M cycles.

Median Price

$0.380

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 97 parts In-Stock

1+ parts

$0.380

100+ parts

-

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97

$0.380

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VNN

France . 4,803 parts In-Stock

1+ parts

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4,803

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Vyrian

USA . 2,508 parts In-Stock

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2,508

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.380

100+ parts

$0.372

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-

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50

$0.380

$0.372

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Corohmni

South Africa . 67 parts In-Stock

1+ parts

$4.395

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67

$4.395

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Modulus Dynamics

Lithuania . 3,816 parts In-Stock

1+ parts

$5.408

100+ parts

$5.408

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$5.408

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-

3,816

$5.408

$5.408

$5.408

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AZTECH Wire

Italy . 806 parts In-Stock

1+ parts

$19.630

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806

$19.630

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Ampacity Inc.

Singapore . 44,531 parts In-Stock

1+ parts

$27.000

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44,531

$27.000

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RGB Technical Solutions

Ukraine . 8,016 parts In-Stock

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8,016

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Argo Parts USA

USA . 3,513 parts In-Stock

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3,513

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Microchip USA

USA . 2,503 parts In-Stock

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2,503

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Continental Prestige Electronics

USA . 597 parts In-Stock

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597

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Overview

Unlock endless possibilities with the 11AA160T-I/CS16K by Microchip Technology. This high-quality EEPROM offers reliability and durability for a wide range of applications. With its industrial-grade technology and impressive endurance of 1,000,000 write/erase cycles, this product provides exceptional value and benefits to customers seeking a dependable memory solution. Say goodbye to data loss worries and hello to seamless operation with the 11AA160T-I/CS16K.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy package body material provides durability and protection to the EEPROM chip, ensuring long-term reliability.

Surface Mount: YES

Surface mount capability allows for easy integration of the EEPROM chip onto circuit boards, saving space and simplifying assembly processes.

Nominal Supply Voltage / Vsup (V): 5

A nominal supply voltage of 5V ensures compatibility with a wide range of systems and provides stable power for the EEPROM chip.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise control and timing of data transfer, enhancing overall performance and efficiency.

Memory Density: 16384 bit

With a high memory density of 16384 bits, this EEPROM chip can store a large amount of data in a compact space.

Endurance: 1000000 Write/Erase Cycles

High endurance of 1000000 write/erase cycles ensures longevity and reliability for frequent data storage and retrieval tasks.

Serial Bus Type: 1-WIRE

Utilizing a 1-Wire serial bus type simplifies communication and data transfer, making the EEPROM chip efficient and easy to integrate into various systems.

Technical Specifications

EEPROM 11AA160T-I/CS16K attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

3 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B4

JESD-609 Code:

e1

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

4

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2KX8

Output Characteristics:

TOTEM POLE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA4,2X2,35/16

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

2/5

Qualification:

Not Qualified

Ready or Busy:

NO

Reverse Pinout:

NO

Screening Level:

TS 16949

Maximum Seated Height:

.55 mm

Serial Bus Type:

1-WIRE

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

SOFTWARE

Trade Compliance

11AA160T-I/CS16K Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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