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MUN5240T1G

Onsemi

MUN5240T1G by Onsemi

MUN5240T1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a min hFE of 120, max VCE of 50V, and max IC of 0.1A. This small outline package with gull wing terminals is ideal for surface mount designs.

Median Price

$0.020

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 159,000 parts In-Stock

1+ parts

-

100+ parts

$0.020

1k+ parts

$0.017

10k+ parts

$0.015

159,000

-

$0.020

$0.017

$0.015

DigiKey

USA . 159,000 parts In-Stock

1+ parts

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159,000

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Verical

USA . 159,000 parts In-Stock

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159,000

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Distributors (In-Stock)

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Digiode

USA . 2,480 parts In-Stock

1+ parts

$0.024

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2,480

$0.024

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Chip Stock

USA . 17,000 parts In-Stock

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17,000

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Vyrian

USA . 346 parts In-Stock

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346

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Distributors (Availability)

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Corphita

USA . 2,076 parts In-Stock

1+ parts

$0.022

100+ parts

-

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2,076

$0.022

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Corohmni

South Africa . 160 parts In-Stock

1+ parts

$0.025

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160

$0.025

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Component Stockers USA

USA . 235,919 parts In-Stock

1+ parts

$0.030

100+ parts

$0.020

1k+ parts

$0.020

10k+ parts

$0.020

235,919

$0.030

$0.020

$0.020

$0.020

AZTECH Wire

Italy . 346 parts In-Stock

1+ parts

$19.850

100+ parts

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346

$19.850

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Continental Prestige Electronics

USA . 159,000 parts In-Stock

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$0.020

159,000

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$0.020

QUARKTWIN TECHNOLOGY LTD

USA . 16,624 parts In-Stock

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16,624

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Problanco Electronics

Mexico . 5,491 parts In-Stock

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5,491

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SupplyDigital Components

Austria . 2,063 parts In-Stock

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2,063

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Kulean Microsystems

USA . 1,322 parts In-Stock

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1,322

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UHIMA Technologies

Türkiye . 740 parts In-Stock

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740

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TANS Electronics

Latvia . 508 parts In-Stock

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508

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Overview

Unlock a world of possibilities with the MUN5240T1G by Onsemi, a top-tier manufacturer known for its commitment to quality. This small signal bipolar junction transistor (BJT) with NPN polarity and built-in resistor is perfect for switching applications. Its compact size, gull wing terminals, and high DC current gain make it ideal for a wide range of projects. Trust in Onsemi's expertise and innovation to bring you a reliable and efficient solution that exceeds expectations. Elevate your designs with the MUN5240T1G and experience the value and performance that only Onsemi can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package material offers good durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering good performance and reliability.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space on the PCB, making it a convenient choice for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation in electronic circuits.

Surface Mount: YES

Surface mount design allows for easy and secure mounting on PCBs, saving assembly time and ensuring a compact layout.

Package Shape: RECTANGULAR

Rectangular shape offers good compatibility with standard PCB layouts and makes it easy to handle and mount the transistor.

Terminal Form: GULL WING

Gull wing terminals provide reliable electrical connections and facilitate automated assembly processes, ensuring consistent quality.

No. of Terminals: 3

Three terminals provide the necessary connections for input, output, and control signals, enabling versatile use in different circuit configurations.

Maximum Power Dissipation (Abs): 0.31 W

High power dissipation capability allows the transistor to handle moderate power levels, ensuring reliable performance under varying load conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for high-density mounting, making it ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures efficient signal amplification and allows the transistor to drive loads effectively in various applications.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating offers good voltage tolerance, making the transistor suitable for different voltage levels in circuits.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material that provides good performance characteristics and reliability for the transistor.

Maximum Collector Current (IC): 0.1 A

Maximum collector current rating of 0.1 A allows the transistor to drive moderate current loads, making it versatile for various applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish with annealing process ensures good solderability and long-term reliability of the terminal connections in the transistor.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and connection options, allowing for easy integration into different electronic designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN5240T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN5240T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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