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MUN5312DW1T1G

Onsemi

MUN5312DW1T1G by Onsemi

MUN5312DW1T1G by Onsemi is a Small Signal BJT with NPN and PNP channels. It features 2 elements with built-in resistor, suitable for switching applications. With a max collector-emitter voltage of 50V and max operating temp of 150°C, it's ideal for surface mount designs.

Median Price

$0.074

Lifecycle Status

Suppliers In-Stock

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1k+

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DigiKey

USA . 26,726 parts In-Stock

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$0.240

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$0.091

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$0.059

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$0.240

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Mouser Electronics

USA . 7,679 parts In-Stock

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$0.240

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$0.092

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$0.059

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$0.045

7,679

$0.240

$0.092

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$0.045

Element14

Singapore . 1,528 parts In-Stock

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$274.000

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$81.000

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$38.000

1,528

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$81.000

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$38.000

EBV Elektronik

Germany . 1,479,000 parts In-Stock

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Arrow

USA . 669,000 parts In-Stock

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Verical

USA . 669,000 parts In-Stock

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669,000

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Rochester

USA . 489,000 parts In-Stock

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$0.034

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$0.028

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$0.025

489,000

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$0.034

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Chip1Stop

Japan . 26,194 parts In-Stock

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$0.074

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$0.051

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26,194

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Flip Electronics (Authorized)

USA . 2,440 parts In-Stock

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Digiode

USA . 462 parts In-Stock

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$0.027

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Nova Conductors

Japan . 100 parts In-Stock

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$0.053

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100

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TME

Poland . 2,850 parts In-Stock

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$0.150

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$0.075

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$0.054

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$0.034

2,850

$0.150

$0.075

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$0.034

IBS Electronics

USA . 1,155,000 parts In-Stock

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NAC Semi

USA . 666,000 parts In-Stock

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Vyrian

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Chip Stock

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Flip Electronics

USA . 5,440 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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Inventory MP

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Bristol Electronics

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LIBRA Elektronik GmbH

Germany . 2,329 parts In-Stock

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PC Components Company LLC

USA . 622 parts In-Stock

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LWI Electronics Inc

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Ampacity Inc.

Singapore . 305,185 parts In-Stock

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Corphita

USA . 2,067 parts In-Stock

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Corohmni

South Africa . 316 parts In-Stock

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Component Stockers USA

USA . 196,652 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Perfect Parts

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GreenTree Electronics

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Eastek

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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TANS Electronics

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Kulean Microsystems

USA . 3,309 parts In-Stock

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Argo Parts USA

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SupplyDigital Components

Austria . 1,098 parts In-Stock

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Computer Components Inc. - USA

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Continental Prestige Electronics

USA . 520 parts In-Stock

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UHIMA Technologies

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Problanco Electronics

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Overview

Discover the MUN5312DW1T1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance in switching applications. With separate NPN and PNP elements and a built-in resistor configuration, this transistor delivers reliable operation and efficient power dissipation. Ideal for a wide range of electronics projects, this component is designed for surface mount installation and features a durable plastic/epoxy package body. Trust Onsemi's reputation for excellence and innovation, and unlock the potential of your designs with the MUN5312DW1T1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for flexibility in circuit design and compatibility with different applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and ensures stable operation, making the transistor easier to use.

Transistor Application: SWITCHING

Ideal for switching applications, providing fast response times and efficient performance.

Surface Mount: YES

Suitable for automated assembly processes, saving time and labor costs.

Package Shape: RECTANGULAR

The rectangular shape allows for compact placement on circuit boards, saving space.

Maximum Power Dissipation (Abs): 0.15 W

Can handle a moderate amount of power, suitable for many common applications.

Minimum DC Current Gain (hFE): 60

A high DC current gain ensures reliable and consistent amplification in circuits.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to moderate voltage applications, providing a wide range of use cases.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in various conditions.

Minimum Operating Temperature: -55 °C

Can operate in extremely cold environments without issues.

Maximum Collector Current (IC): 0.1 A

Can handle moderate current flow, suitable for many common circuit designs.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures stable connections in circuit assemblies.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a short duration during assembly processes.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during the soldering process without damage.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN5312DW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN5312DW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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