Loading...

MUN5114DW1T1

Onsemi

MUN5114DW1T1 by Onsemi

MUN5114DW1T1 by Onsemi is a PNP BJT with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly.

Median Price

$0.071

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 105,000 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

105,000

-

$0.066

$0.055

$0.049

DigiKey

USA . 105,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.080

105,000

-

-

-

$0.080

Farnell

UK . 105,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.076

105,000

-

-

-

$0.076

Verical

USA . 72,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

72,000

-

-

-

$0.061

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 374 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

-

10k+ parts

-

374

$0.051

-

-

-

Vyrian

USA . 1,792 parts In-Stock

1+ parts

$0.054

100+ parts

-

1k+ parts

-

10k+ parts

-

1,792

$0.054

-

-

-

DigiKey Marketplace

USA . 105,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

105,000

-

-

-

-

Chip Stock

USA . 78,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

78,000

-

-

-

-

Zilex Electronics Inc.

Canada . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,000

-

-

-

-

Pegasus Components GmbH

Germany . 1,550 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,550

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 329 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

-

10k+ parts

-

329

$0.049

-

-

-

Component Stockers USA

USA . 153,339 parts In-Stock

1+ parts

$0.050

100+ parts

$0.050

1k+ parts

$0.050

10k+ parts

$0.050

153,339

$0.050

$0.050

$0.050

$0.050

Corohmni

South Africa . 120 parts In-Stock

1+ parts

$0.054

100+ parts

-

1k+ parts

-

10k+ parts

-

120

$0.054

-

-

-

Continental Prestige Electronics

USA . 105,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.052

10k+ parts

-

105,000

-

-

$0.052

-

QUARKTWIN TECHNOLOGY LTD

USA . 24,745 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24,745

-

-

-

-

RC Electronics

USA . 22,500 parts In-Stock

1+ parts

-

100+ parts

$0.080

1k+ parts

$0.080

10k+ parts

$0.080

22,500

-

$0.080

$0.080

$0.080

SupplyDigital Components

Austria . 5,351 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,351

-

-

-

-

TANS Electronics

Latvia . 5,013 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,013

-

-

-

-

Problanco Electronics

Mexico . 4,315 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,315

-

-

-

-

Kulean Microsystems

USA . 2,528 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,528

-

-

-

-

UHIMA Technologies

Türkiye . 874 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

874

-

-

-

-

Overview

Upgrade your electronic projects with the MUN5114DW1T1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. With its durable plastic/epoxy package and PNP configuration featuring 2 elements with built-in resistors, this transistor offers reliable performance and ease of installation. Whether you're a DIY enthusiast or a professional, this versatile component delivers exceptional value and efficiency. Trust Onsemi's expertise in semiconductor manufacturing and elevate your designs with the MUN5114DW1T1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used for high-side switching applications, making this transistor versatile and suitable for a variety of circuit designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Having 2 elements with built-in resistor allows for easier circuit design and implementation, saving time and effort for the user.

Transistor Application: SWITCHING

Specifically designed for switching applications, this transistor is optimized for fast switching speeds and efficiency in electronic circuits.

Surface Mount: YES

Surface mount capability facilitates easy and efficient integration onto circuit boards, making this transistor ideal for compact and space-constrained applications.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and soldering onto circuit boards, ensuring a secure connection and stable operation.

Minimum DC Current Gain (hFE): 80

High DC current gain of 80 ensures reliable and consistent amplification in transistor circuits, enhancing overall performance.

Maximum Collector-Emitter Voltage: 50 V

With a maximum voltage rating of 50V, this transistor can handle a wide range of voltages, making it versatile and suitable for various applications.

Maximum Collector Current (IC): 0.1 A

Capable of handling a maximum collector current of 0.1A, this transistor is suitable for low-power applications where a moderate current load is required.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN5114DW1T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN5114DW1T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20