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MUN5214DW1T1G

Onsemi

MUN5214DW1T1G by Onsemi

MUN5214DW1T1G by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. Ideal for switching applications due to its small outline package style and surface mount capability.

Median Price

$0.078

Lifecycle Status

Suppliers In-Stock

36

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 30,000 parts In-Stock

1+ parts

$0.026

100+ parts

$0.025

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$0.022

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30,000

$0.026

$0.025

$0.022

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Arrow

USA . 9,209 parts In-Stock

1+ parts

$0.087

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$0.032

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$0.016

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$0.013

9,209

$0.087

$0.032

$0.016

$0.013

Mouser Electronics

USA . 55,505 parts In-Stock

1+ parts

$0.240

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$0.092

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$0.059

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55,505

$0.240

$0.092

$0.059

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DigiKey

USA . 50,342 parts In-Stock

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$0.240

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$0.091

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$0.059

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50,342

$0.240

$0.091

$0.059

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Newark

USA . 239 parts In-Stock

1+ parts

$0.273

100+ parts

$0.111

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$0.063

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$0.060

239

$0.273

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Future Electronics

Canada . 801,000 parts In-Stock

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EBV Elektronik

Germany . 162,000 parts In-Stock

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Farnell

UK . 75,473 parts In-Stock

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$0.070

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$0.053

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$0.047

75,473

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$0.070

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$0.047

Element14

Singapore . 75,418 parts In-Stock

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$0.118

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$0.081

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Flip Electronics (Authorized)

USA . 27,000 parts In-Stock

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Verical

USA . 9,209 parts In-Stock

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9,209

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Chip1Stop

Japan . 620 parts In-Stock

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$0.058

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$0.054

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620

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Distributors (In-Stock)

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Digiode

USA . 1,319 parts In-Stock

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$0.025

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Nova Conductors

Japan . 700 parts In-Stock

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$0.055

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700

$0.055

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Bristol Electronics

USA . 22,375 parts In-Stock

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$0.150

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$0.075

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$0.030

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$0.019

22,375

$0.150

$0.075

$0.030

$0.019

Maritex

Poland . 151 parts In-Stock

1+ parts

$0.179

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$0.047

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$0.032

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$0.027

151

$0.179

$0.047

$0.032

$0.027

TME

Poland . 12,985 parts In-Stock

1+ parts

$0.220

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$0.088

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$0.054

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$0.039

12,985

$0.220

$0.088

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$0.039

Cyclops Electronics Ltd

UK . 607,968 parts In-Stock

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NAC Semi

USA . 225,000 parts In-Stock

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Chip Stock

USA . 141,500 parts In-Stock

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Diverse Electronics

Canada . 135,000 parts In-Stock

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IBS Electronics

USA . 99,000 parts In-Stock

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Vyrian

USA . 68,621 parts In-Stock

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ComSIT Distribution GmbH

Germany . 58,295 parts In-Stock

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Martec Srl

Italy . 42,934 parts In-Stock

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Component Sense

UK . 37,127 parts In-Stock

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Microfarads

USA . 4,564 parts In-Stock

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Flip Electronics

USA . 3,000 parts In-Stock

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Elcom Components

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Partservice

France . 3,000 parts In-Stock

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$0.157

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$0.028

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$0.028

Micros sp.j. W. Kędra i J. Lic

Poland . 3,000 parts In-Stock

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$0.168

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$0.030

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$0.030

PC Components Company LLC

USA . 2,021 parts In-Stock

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South Electronics

USA . 1,119 parts In-Stock

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Contempo Components LLC

USA . 331 parts In-Stock

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331

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Prism Electronics

USA . 54 parts In-Stock

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Cogito LLC

Ukraine . 3 parts In-Stock

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Distributors (Availability)

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Component Stockers USA

USA . 403,440 parts In-Stock

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$0.010

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$0.010

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$0.020

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$0.010

403,440

$0.010

$0.010

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$0.010

Ampacity Inc.

Singapore . 67,625 parts In-Stock

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Corohmni

South Africa . 315 parts In-Stock

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Corphita

USA . 1,641 parts In-Stock

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$0.023

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Argo Parts USA

USA . 3,881 parts In-Stock

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$0.055

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$0.053

3,881

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Netroflash

USA . 1,000 parts In-Stock

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$0.055

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$0.055

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Continental Prestige Electronics

USA . 91,193 parts In-Stock

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$0.233

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$0.095

1k+ parts

$0.041

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$0.233

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$0.041

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Aztec Data Supply Inc.

USA . 3,939 parts In-Stock

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$1.778

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$1.778

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Perfect Parts

USA . 2,051,709 parts In-Stock

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GreenTree Electronics

Israel . 384,000 parts In-Stock

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Authorized Procurement Solutions

USA . 360,000 parts In-Stock

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Eastek

USA . 252,000 parts In-Stock

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RC Electronics

USA . 142,004 parts In-Stock

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Kepictronics

USA . 36,654 parts In-Stock

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iodParts Technologies Inc.

India . 35,070 parts In-Stock

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Lixinc

USA . 15,918 parts In-Stock

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Futuretech Components

Singapore . 8,980 parts In-Stock

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Problanco Electronics

Mexico . 7,508 parts In-Stock

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Kulean Microsystems

USA . 6,524 parts In-Stock

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SupplyDigital Components

Austria . 3,275 parts In-Stock

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TANS Electronics

Latvia . 3,070 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 253 parts In-Stock

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Overview

Discover the unparalleled performance and reliability of the MUN5214DW1T1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality small signal bipolar junction transistors, making them ideal for various switching applications. With its separate elements and built-in resistor configuration, this NPN transistor offers unmatched value and benefits to customers. Whether you're looking for a durable and efficient component for your electronic projects, the MUN5214DW1T1G is the perfect choice. Experience the difference with Onsemi's innovative technology today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Allows for easy integration into NPN circuit designs, making it versatile for different electronic projects.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Offers flexibility in circuit design and saves space with a built-in resistor, enhancing efficiency.

Transistor Application: SWITCHING

Ideal for applications that require fast switching speeds, making it a reliable choice for switching circuits.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and reducing production costs.

Package Shape: RECTANGULAR

Fits well in compact spaces and allows for easy placement on a circuit board.

Terminal Form: GULL WING

Facilitates easy soldering and ensures secure connections for reliable performance.

No. of Elements: 2

Provides a dual element design for enhanced functionality and performance in electronic circuits.

No. of Terminals: 6

Offers multiple terminals for connecting to different components, allowing for a wide range of circuit configurations.

Maximum Power Dissipation (Abs): 0.385 W

Can handle high power dissipation levels, ensuring reliability and longevity in operation.

Package Style (Meter): SMALL OUTLINE

Compact size with a small outline makes it suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 80

High minimum DC current gain ensures consistent and reliable amplification in various circuit designs.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without exceeding the maximum operating limit, increasing reliability.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage rating, it can handle moderate voltage levels in a circuit.

Transistor Element Material: SILICON

Silicon material ensures high performance, reliability, and longevity in various electronic applications.

Maximum Collector Current (IC): 0.1 A

Can handle moderate collector currents, making it suitable for low-power applications.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and ensures stable connections for long-term use.

Terminal Position: DUAL

Dual terminal position offers flexibility in component placement and easy integration into circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a specific duration, ensuring proper soldering during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability ensures secure soldering and reliability during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN5214DW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN5214DW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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