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MUN5111T1G

Onsemi

MUN5111T1G by Onsemi

MUN5111T1G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 0.31W, and hFE of 35. Ideal for switching applications, it has a max. collector-emitter voltage of 50V and max. collector current of 0.1A. Package style is small outline with gull wing terminals, suitable for surface mount technology.

Median Price

$0.022

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 10,974 parts In-Stock

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$0.170

100+ parts

$0.063

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$0.040

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10,974

$0.170

$0.063

$0.040

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Adafruit Industries

USA . 3,000 parts In-Stock

1+ parts

$0.854

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$0.777

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$0.700

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3,000

$0.854

$0.777

$0.700

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Arrow

USA . 246,000 parts In-Stock

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$0.022

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Verical

USA . 246,000 parts In-Stock

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$0.022

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Avnet

USA . 99,000 parts In-Stock

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Rochester

USA . 87,000 parts In-Stock

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$0.020

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$0.017

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$0.015

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$0.020

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Flip Electronics (Authorized)

USA . 27,000 parts In-Stock

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Chip1Stop

Japan . 24,000 parts In-Stock

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$0.017

Distributors (In-Stock)

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Digiode

USA . 833 parts In-Stock

1+ parts

$0.024

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833

$0.024

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Nova Conductors

Japan . 100 parts In-Stock

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$0.054

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100

$0.054

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Zilex Electronics Inc.

Canada . 132,000 parts In-Stock

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Chip Stock

USA . 57,000 parts In-Stock

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IBS Electronics

USA . 48,000 parts In-Stock

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Vyrian

USA . 37,552 parts In-Stock

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Flip Electronics

USA . 33,000 parts In-Stock

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Rebound Electronics

UK . 21,000 parts In-Stock

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Bristol Electronics

USA . 8,575 parts In-Stock

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ComSIT Distribution GmbH

Germany . 6,000 parts In-Stock

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ComSIT USA

USA . 6,000 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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$0.056

6,000

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Inventory MP

USA . 2,928 parts In-Stock

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2,928

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Flex Direct, LLC

USA . 2,647 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 35,263 parts In-Stock

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$0.014

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$0.014

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35,263

$0.014

$0.014

$0.014

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Ampacity Inc.

Singapore . 35,000 parts In-Stock

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$0.014

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35,000

$0.014

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Corohmni

South Africa . 389 parts In-Stock

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389

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Corphita

USA . 1,207 parts In-Stock

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$0.022

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Argo Parts USA

USA . 4,583 parts In-Stock

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$0.054

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$0.052

4,583

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Continental Prestige Electronics

USA . 2,012 parts In-Stock

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2,012

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Netroflash

USA . 2,000 parts In-Stock

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$0.053

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2,000

$0.054

$0.053

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$0.854

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$0.777

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$0.700

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3,000

$0.854

$0.777

$0.700

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Aztec Data Supply Inc.

USA . 3,419 parts In-Stock

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$1.022

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$1.022

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Perfect Parts

USA . 624,996 parts In-Stock

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Authorized Procurement Solutions

USA . 150,000 parts In-Stock

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GreenTree Electronics

Israel . 72,000 parts In-Stock

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Kepictronics

USA . 45,000 parts In-Stock

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Eastek

USA . 42,000 parts In-Stock

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RC Electronics

USA . 20,000 parts In-Stock

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$0.050

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$0.050

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$0.050

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$0.050

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Robosynatics

Brazil . 18,086 parts In-Stock

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$1.108

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$1.086

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$1.086

18,086

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$1.108

$1.086

$1.086

Lucentia Tech

USA . 18,086 parts In-Stock

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$1.108

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$1.086

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$1.086

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$1.108

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$1.086

Glotronic Ltd.

UK . 16,800 parts In-Stock

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Infinite Electronics LLP (Excess)

. 9,001 parts In-Stock

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4 Star Electronics, Inc. (Excess)

USA . 7,712 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,434 parts In-Stock

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Kulean Microsystems

USA . 6,139 parts In-Stock

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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ChipTracer

USA . 3,000 parts In-Stock

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Lixinc

USA . 2,038 parts In-Stock

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Problanco Electronics

Mexico . 1,729 parts In-Stock

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TANS Electronics

Latvia . 1,436 parts In-Stock

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Assy Fe

Spain . 1,229 parts In-Stock

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SupplyDigital Components

Austria . 335 parts In-Stock

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335

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UHIMA Technologies

Türkiye . 72 parts In-Stock

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Overview

Unlock the power of reliable performance with the MUN5111T1G by Onsemi. Crafted with precision and quality in mind, this Small Signal Bipolar Junction Transistor (BJT) is designed for switching applications, making it a versatile choice for a wide range of electronic projects. With its PNP polarity, single configuration with built-in resistor, and maximum collector-emitter voltage of 50V, this transistor offers exceptional value and efficiency. Trust in Onsemi's reputation for excellence and experience seamless integration with its surface mount design and Gull Wing terminal form. Elevate your projects with the MUN5111T1G - the perfect choice for quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environmental conditions.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit configurations, enhancing compatibility with existing setups.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by incorporating a built-in resistor, reducing the need for additional components and saving space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance and reliable operation in switching circuits.

Surface Mount: YES

Enables easy and secure mounting on a PCB, saving assembly time and facilitating automated manufacturing processes.

Package Shape: RECTANGULAR

Facilitates easy placement and alignment during PCB assembly, improving manufacturing efficiency.

Terminal Form: GULL WING

Provides a strong mechanical bond to the PCB, enhancing reliability and performance under various operating conditions.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity in circuit layouts.

Maximum Power Dissipation (Abs): 0.31 W

Handles moderate power levels efficiently, ensuring stability and reliability in operation.

Package Style (Meter): SMALL OUTLINE

Saves space on the PCB and allows for high-density mounting of components, ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 35

Ensures consistent and reliable amplification of input signals, maintaining signal integrity in various applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without compromising performance, suitable for applications in demanding environments.

Maximum Collector-Emitter Voltage: 50 V

Capable of handling high voltages, making it suitable for a wide range of voltage applications.

Transistor Element Material: SILICON

Provides high performance and reliability, offering excellent thermal and electrical properties for optimal transistor operation.

Maximum Collector Current (IC): 0.1 A

Suitable for low to moderate current applications, ensuring efficient current handling and reliable operation.

Terminal Finish: Matte Tin (Sn) - annealed

Enhances solderability and reliability of terminal connections, ensuring secure and durable attachment to the PCB.

Terminal Position: DUAL

Facilitates easy and secure connection to external circuitry, ensuring stable and reliable electrical connections.

Maximum Time At Peak Reflow Temperature (s): 40

Withstands peak reflow temperatures for a specified duration, ensuring stable and reliable solder joints during assembly.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during the assembly process, ensuring proper soldering and mechanical integrity.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN5111T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN5111T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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