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MUN5313DW1T1G

Onsemi

MUN5313DW1T1G by Onsemi

MUN5313DW1T1G by Onsemi is a Small Signal BJT with NPN and PNP types, 2 elements with built-in resistor. Ideal for switching applications, it has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80.

Median Price

$0.076

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 990 parts In-Stock

1+ parts

$0.237

100+ parts

$0.089

1k+ parts

$0.058

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990

$0.237

$0.089

$0.058

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Mouser Electronics

USA . 8,401 parts In-Stock

1+ parts

$0.240

100+ parts

$0.092

1k+ parts

$0.067

10k+ parts

$0.053

8,401

$0.240

$0.092

$0.067

$0.053

DigiKey

USA . 433 parts In-Stock

1+ parts

$0.240

100+ parts

$0.091

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$0.059

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433

$0.240

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$0.059

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Arrow

USA . 66,000 parts In-Stock

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$0.034

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$0.034

Verical

USA . 34,341 parts In-Stock

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Chip1Stop

Japan . 12,000 parts In-Stock

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$0.069

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$0.038

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$0.069

$0.038

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Flip Electronics (Authorized)

USA . 2,550 parts In-Stock

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2,550

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Farnell

UK . 2,125 parts In-Stock

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$0.053

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$0.048

2,125

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-

$0.053

$0.048

Element14

Singapore . 2,010 parts In-Stock

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-

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$0.082

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$0.081

2,010

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-

$0.082

$0.081

Rochester

USA . 341 parts In-Stock

1+ parts

-

100+ parts

$0.034

1k+ parts

$0.028

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$0.025

341

-

$0.034

$0.028

$0.025

Distributors (In-Stock)

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Digiode

USA . 265 parts In-Stock

1+ parts

$0.027

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-

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265

$0.027

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Nova Conductors

Japan . 870 parts In-Stock

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$0.054

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870

$0.054

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Bristol Electronics

USA . 3,969 parts In-Stock

1+ parts

$0.142

100+ parts

$0.071

1k+ parts

$0.029

10k+ parts

$0.021

3,969

$0.142

$0.071

$0.029

$0.021

TME

Poland . 218 parts In-Stock

1+ parts

$0.220

100+ parts

$0.087

1k+ parts

$0.052

10k+ parts

$0.040

218

$0.220

$0.087

$0.052

$0.040

NAC Semi

USA . 240,000 parts In-Stock

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$0.096

240,000

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$0.096

Cyclops Electronics Ltd

UK . 108,000 parts In-Stock

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Chip Stock

USA . 69,500 parts In-Stock

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Vyrian

USA . 44,537 parts In-Stock

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44,537

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IBS Electronics

USA . 24,000 parts In-Stock

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$0.026

24,000

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$0.026

Q Components

USA . 13,800 parts In-Stock

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13,800

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ComSIT Distribution GmbH

Germany . 6,410 parts In-Stock

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Dan-Mar Components

USA . 3,969 parts In-Stock

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Holdelec - ElecDif-Pro

France . 3,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,617 parts In-Stock

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2,617

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Flip Electronics

USA . 2,550 parts In-Stock

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Atlantic Semiconductor

USA . 558 parts In-Stock

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558

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Distributors (Availability)

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Semicontronic

India . 43,891 parts In-Stock

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$0.022

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$0.021

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$0.021

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43,891

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$0.021

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Ampacity Inc.

Singapore . 29,279 parts In-Stock

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$0.022

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29,279

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Corphita

USA . 693 parts In-Stock

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693

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Corohmni

South Africa . 279 parts In-Stock

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$0.026

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279

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Component Stockers USA

USA . 129,866 parts In-Stock

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$0.020

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129,866

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$0.030

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Netroflash

USA . 2,000 parts In-Stock

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$0.054

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2,000

$0.054

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Aztec Data Supply Inc.

USA . 3,689 parts In-Stock

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$0.590

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3,689

$0.590

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Perfect Parts

USA . 2,378,013 parts In-Stock

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2,378,013

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Authorized Procurement Solutions

USA . 1,389,000 parts In-Stock

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Eastek

USA . 390,000 parts In-Stock

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GreenTree Electronics

Israel . 360,000 parts In-Stock

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RC Electronics

USA . 114,057 parts In-Stock

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114,057

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ChipstoGo Electronic ltd

UK . 57,000 parts In-Stock

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Continental Prestige Electronics

USA . 55,341 parts In-Stock

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$0.031

55,341

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$0.031

Kepictronics

USA . 21,000 parts In-Stock

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Lixinc

USA . 18,959 parts In-Stock

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Kulean Microsystems

USA . 7,376 parts In-Stock

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7,376

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SupplyDigital Components

Austria . 6,579 parts In-Stock

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6,579

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Problanco Electronics

Mexico . 5,571 parts In-Stock

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TANS Electronics

Latvia . 1,912 parts In-Stock

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UHIMA Technologies

Türkiye . 580 parts In-Stock

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580

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Argo Parts USA

USA . 394 parts In-Stock

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394

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Overview

Unlock the power of innovation with the MUN5313DW1T1G by Onsemi - a high-quality Small Signal Bipolar Junction Transistor designed for switching applications. Manufactured by Onsemi, known for their excellence in semiconductor technology, this transistor offers customers unbeatable value and reliability. With its NPN and PNP configuration, built-in resistors, and gull wing terminals, this transistor is the perfect solution for your circuit needs. Embrace the future of electronics with the MUN5313DW1T1G and experience the advantages of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type

NPN AND PNP - Offers versatility in circuit design, allowing for different configurations based on the application requirements.

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR - Simplifies circuit design by integrating resistors, reducing component count and board space.

Transistor Application

SWITCHING - Ideal for applications requiring fast switching speeds and high efficiency, such as power supplies and amplifiers.

Surface Mount

YES - Enables easy assembly onto PCBs, saving time and labor during production.

Package Shape

RECTANGULAR - Provides a compact form factor, making it suitable for space-constrained applications.

Terminal Form

GULL WING - Facilitates easy soldering onto PCBs, ensuring a reliable electrical connection.

No. of Elements

2 - Allows for more complex circuit configurations, providing flexibility in design.

No. of Terminals

6 - Offers multiple connections for various circuit configurations and functionalities.

Maximum Power Dissipation (Abs)

0.385 W - Handles high power levels efficiently, ensuring reliable performance in demanding applications.

Package Style (Meter)

SMALL OUTLINE - Provides a low-profile design, suitable for compact electronic devices.

Minimum DC Current Gain (hFE)

80 - Ensures consistent and reliable amplification of current in the circuit.

Maximum Operating Temperature

150 °C - Can withstand high temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage

50 V - Supports high voltage requirements in circuits, enabling a wide range of applications.

Transistor Element Material

SILICON - Offers high performance and reliability, ensuring long-term functionality.

Maximum Collector Current (IC)

0.1 A - Handles high current loads, making it versatile for a variety of applications.

Terminal Finish

MATTE TIN - Provides a reliable and durable finish, ensuring stable electrical connections.

Terminal Position

DUAL - Allows for more flexible mounting options on PCBs.

Maximum Time At Peak Reflow Temperature (s)

30 - Handles reflow processes efficiently, ensuring proper soldering and assembly.

Peak Reflow Temperature °C

260 - Withstands high-temperature soldering processes, ensuring a durable and reliable connection.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN5313DW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN5313DW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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