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MUN5112T1

Onsemi

MUN5112T1 by Onsemi

MUN5112T1 by Onsemi is a PNP BJT with built-in resistor for switching applications. It has hFE of 60, VCE of 50V, and IC of 0.1A. The transistor is in a small outline package with Gull Wing terminals, suitable for surface mount assembly.

Median Price

$0.050

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 774,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

774,000

-

$0.053

$0.044

$0.039

DigiKey

USA . 774,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.050

774,000

-

-

-

$0.050

Verical

USA . 774,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

774,000

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,957 parts In-Stock

1+ parts

$0.041

100+ parts

-

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1,957

$0.041

-

-

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Vyrian

USA . 878 parts In-Stock

1+ parts

$0.041

100+ parts

-

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878

$0.041

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R&J Components

USA . 26,515 parts In-Stock

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26,515

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,021 parts In-Stock

1+ parts

$0.039

100+ parts

-

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-

1,021

$0.039

-

-

-

Component Stockers USA

USA . 910,982 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.040

10k+ parts

$0.040

910,982

$0.040

$0.040

$0.040

$0.040

Corohmni

South Africa . 401 parts In-Stock

1+ parts

$0.041

100+ parts

-

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-

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-

401

$0.041

-

-

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Continental Prestige Electronics

USA . 774,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.041

10k+ parts

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774,000

-

-

$0.041

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Assy Fe

Spain . 26,000 parts In-Stock

1+ parts

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100+ parts

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26,000

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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25,000

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QUARKTWIN TECHNOLOGY LTD

USA . 17,834 parts In-Stock

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17,834

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Metaverse IC Inc.

Canada . 12,000 parts In-Stock

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12,000

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Kepictronics

USA . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 7,435 parts In-Stock

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7,435

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TANS Electronics

Latvia . 4,478 parts In-Stock

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4,478

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Kulean Microsystems

USA . 3,439 parts In-Stock

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3,439

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SupplyDigital Components

Austria . 317 parts In-Stock

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317

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UHIMA Technologies

Türkiye . 242 parts In-Stock

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242

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Overview

Looking for a reliable small signal BJT? Look no further than the MUN5112T1 by Onsemi. With its high-quality construction and efficient design, this PNP transistor is perfect for switching applications. The built-in resistor simplifies installation, making it a top choice for engineers. Its compact size and surface mount capabilities make it versatile for a wide range of projects. Trust Onsemi for superior performance and value with the MUN5112T1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the transistor from external elements.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by already including a resistor, saving time and space.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast response time and efficient performance.

Surface Mount: YES

Can be easily mounted on PCBs, saving assembly time and space.

Package Shape: RECTANGULAR

Allows for easy placement and alignment on the circuit board.

Terminal Form: GULL WING

Ensures secure connections and easy soldering during PCB assembly.

No. of Terminals: 3

Simple and straightforward connection setup.

Maximum Power Dissipation (Abs): 0.15 W

Can handle moderate power levels effectively.

Package Style (Meter): SMALL OUTLINE

Compact package size suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 60

Provides stable and reliable amplification of the input signal.

Maximum Collector-Emitter Voltage: 50 V

Can withstand voltages up to 50V across collector and emitter terminals.

Transistor Element Material: SILICON

High-quality material known for its reliability and performance in semiconductor devices.

Maximum Collector Current (IC): 0.1 A

Capable of handling currents up to 0.1A without any issues.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides a reliable and durable finish for the terminals.

Terminal Position: DUAL

Allows for easy and secure connection to the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds during assembly.

Peak Reflow Temperature °C: 235

Can handle peak reflow temperatures of up to 235 °C during the soldering process.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN5112T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN5112T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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