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MUN5114T1G

Onsemi

MUN5114T1G by Onsemi

MUN5114T1G by Onsemi is a PNP BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This surface-mount transistor operates up to 150°C, making it suitable for various electronic devices.

Median Price

$0.048

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 9,059 parts In-Stock

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$0.165

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$0.060

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$0.039

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9,059

$0.165

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$0.039

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DigiKey

USA . 1,926 parts In-Stock

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$0.170

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$0.063

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$0.040

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1,926

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Mouser Electronics

USA . 701 parts In-Stock

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$0.170

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$0.063

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$0.040

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$0.038

701

$0.170

$0.063

$0.040

$0.038

Rochester

USA . 238,161 parts In-Stock

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-

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$0.020

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$0.015

238,161

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$0.020

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Verical

USA . 195,000 parts In-Stock

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Arrow

USA . 129,000 parts In-Stock

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$0.026

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Flip Electronics (Authorized)

USA . 51,000 parts In-Stock

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Chip1Stop

Japan . 24,000 parts In-Stock

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$0.026

24,000

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$0.026

EBV Elektronik

Germany . 18,000 parts In-Stock

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Farnell

UK . 9,694 parts In-Stock

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$0.050

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$0.033

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$0.028

9,694

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$0.050

$0.033

$0.028

Element14

Singapore . 9,694 parts In-Stock

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$0.046

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$0.045

9,694

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$0.046

$0.045

Distributors (In-Stock)

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Vyrian

USA . 2,319 parts In-Stock

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$0.020

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Digiode

USA . 2,123 parts In-Stock

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$0.024

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DigiKey Marketplace

USA . 238,161 parts In-Stock

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Chip Stock

USA . 76,000 parts In-Stock

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NAC Semi

USA . 60,000 parts In-Stock

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$0.041

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Flip Electronics

USA . 51,000 parts In-Stock

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Bristol Electronics

USA . 31,168 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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Semi Source

USA . 1,982 parts In-Stock

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Inventory MP

USA . 873 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Component Stockers USA

USA . 365,022 parts In-Stock

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Corphita

USA . 1,843 parts In-Stock

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Corohmni

South Africa . 66 parts In-Stock

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Perfect Parts

USA . 289,763 parts In-Stock

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Continental Prestige Electronics

USA . 238,160 parts In-Stock

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Eastek

USA . 45,000 parts In-Stock

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ChipTracer

USA . 30,295 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 17,291 parts In-Stock

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Kepictronics

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TANS Electronics

Latvia . 6,327 parts In-Stock

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SupplyDigital Components

Austria . 5,751 parts In-Stock

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Lixinc

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Metaverse IC Inc.

Canada . 4,377 parts In-Stock

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Argo Parts USA

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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Aranea Global

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Kulean Microsystems

USA . 1,556 parts In-Stock

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Problanco Electronics

Mexico . 876 parts In-Stock

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Futuretech Components

Singapore . 750 parts In-Stock

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UHIMA Technologies

Türkiye . 456 parts In-Stock

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Overview

Unleash the power of innovation with the MUN5114T1G by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor designed for switching applications. With Onsemi's reputation for quality and reliability, this PNP transistor boasts a single configuration with a built-in resistor for ease of use. Perfect for your next project requiring precision and efficiency, this transistor offers maximum power dissipation of 0.15W and a minimum DC current gain of 80. Say goodbye to limitations and hello to limitless possibilities with the MUN5114T1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal and electrical insulation, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by already including a resistor in the package.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast response times and low power dissipation.

Surface Mount: YES

Enables easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Facilitates a compact and space-saving design layout.

Terminal Form: GULL WING

Provides mechanical stability during soldering and assembly.

Maximum Power Dissipation (Abs): 0.15 W

Suitable for low power applications while maintaining reliability.

Minimum DC Current Gain (hFE): 80

Ensures consistent and stable amplification of the signal.

Maximum Operating Temperature: 150 °C

Can operate in a wide temperature range for versatile usage.

Maximum Collector-Emitter Voltage: 50 V

Can handle moderate voltage levels in the circuit.

Transistor Element Material: SILICON

Provides high performance and reliability.

Maximum Collector Current (IC): 0.1 A

Able to handle medium current levels in the circuit.

Terminal Finish: Matte Tin (Sn) - annealed

Enhances solderability and ensures consistent electrical connections.

Terminal Position: DUAL

Provides flexibility in circuit layout and connectivity.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand reflow soldering without compromising performance.

Peak Reflow Temperature °C: 260

Compatible with standard reflow soldering processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN5114T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN5114T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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