Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MPSA42RLRMG
Onsemi
MPSA42RLRMG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 300V and max. collector current of 0.5A, ideal for amplifier applications. With a min. DC current gain of 40 and max. power dissipation of 1.5W, it operates at up to 150°C making it suitable for various electronic designs requiring high performance in a cylindrical package style.
.5 A
300 V
SINGLE
40
TO-92
O-PBCY-T3
e1
1
3
150 Cel
PLASTIC/EPOXY
ROUND
CYLINDRICAL
260
NPN
1.5 W
Not Qualified
Other Transistors
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
AMPLIFIER
SILICON
50 MHz
MPSA44RL1G
MPSA44RL1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. Featuring a min. DC current gain of 40 and max. power dissipation of 0.625W, it operates at up to 150 °C. Its through-hole package style makes it suitable for various electronic circuits.
EUROPEAN PART NUMBER
.3 A
400 V
.625 W
SWITCHING
MPSA56RLRAG
MPSA56RLRAG by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 100, and max. collector-emitter voltage of 80V. It is used in amplifier applications due to its cylindrical package style and silicon element material for high performance amplification at up to 50MHz transition frequency.
80 V
100
PNP
MPSA63RLRAG
MPSA63RLRAG by Onsemi is a PNP Darlington BJT with 1.5W power dissipation, hFE of 10000, and max temp of 150 °C. Ideal for switching applications due to its 30V VCE, 0.5A IC, and high transition frequency of 125MHz in a cylindrical package.
30 V
DARLINGTON
10000
125 MHz
MPSA92G
MPSA92G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 25, and VCE of 300V. Ideal for amplifier applications due to its single configuration and cylindrical package style.
25
MPSW01ARLRAG
MPSW01ARLRAG by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 2.5W, and max collector current of 1A. Ideal for applications requiring a single configuration transistor with a min DC current gain of 50 (hFE), operating up to 150 °C.
1 A
40 V
50
TO-226
2.5 W
MPSW01ARLRPG
MPSW01ARLRPG by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 2.5W, and max collector-emitter voltage of 40V. Ideal for applications requiring a single configuration transistor with a min DC current gain of 50 (hFE), operating up to 150 °C, and featuring a nominal transition frequency of 50MHz.
MPSW06G
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .5 A;
60
1 W
MPSW06RLRAG
MPSW06RLRAG by Onsemi is a NPN BJT transistor with 80V VCEO, 0.5A IC, and 1W Ptot. Ideal for amplifier applications due to its hFE of 60 and fT of 50MHz. Packaged in cylindrical form with through-hole terminals for easy integration.
MPSW56RLRAG
MPSW56RLRAG by Onsemi is a PNP BJT with 80V VCEO, 50MHz fT, and 1W power dissipation. Ideal for amplifier applications due to its single configuration and hFE of 50. Its through-hole terminals and cylindrical package make it suitable for various electronic designs.
MPSA63G
MPSA63G by Onsemi is a PNP BJT transistor with a Darlington configuration. It has a max power dissipation of 1.5W, hFE of 10000, and operates up to 150°C. Ideal for switching applications due to its high collector current of 0.5A and max voltage of 30V.
MPSA64G
The Onsemi MPSA64G is a PNP Darlington transistor with 3 terminals, ideal for switching applications. With a max power dissipation of 1.5W and max collector-emitter voltage of 30V, it operates at up to 150 °C. Featuring a min DC current gain of 20k and nominal transition frequency of 125MHz, it is suitable for high-performance electronic circuits.
20000
Tin/Silver/Copper (Sn/Ag/Cu)
MPSA64RLRAG
MPSA64RLRAG by Onsemi is a PNP BJT with 30V VCEO, 0.5A IC, and 1.5W power dissipation. Ideal for switching applications, it features a high DC current gain of 20k hFE and operates up to 150 °C. Its Darlington configuration makes it suitable for various electronic designs requiring reliable performance in through-hole packages.
MPSA64RLRMG
MPSA64RLRMG by Onsemi is a PNP Darlington BJT with 3 terminals, hFE of 20000, and max. power dissipation of 1.5W. Ideal for switching applications, it operates at up to 150 °C with VCE of 30V. The transistor's SILICON material and cylindrical package make it suitable for high-frequency operations up to 125MHz.
MSD601-ST1G
The Onsemi MSD601-ST1G is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.5V, min hFE of 290, and max IC of 0.1A. With GULL WING terminals and a small outline package style, it operates up to 150 °C making it suitable for various electronic circuits.
.1 A
50 V
290
R-PDSO-G3
e3
RECTANGULAR
SMALL OUTLINE
.2 W
YES
TIN
GULL WING
DUAL
30
.5 V
BC849BLT3G
BC849BLT3G by Onsemi is a NPN BJT with VCEsat of 0.6V, hFE of 200, and fT of 100MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact GULL WING package.
4.5 pF
200
TO-236
-55 Cel
.3 W
Tin (Sn)
100 MHz
.6 V
MMUN2231LT1G
MMUN2231LT1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and power dissipation of 0.4W. This surface-mount device comes in a small outline package suitable for high-temperature environments up to 150 °C.
BUILT-IN BIAS RESISTOR RATIO IS 1
SINGLE WITH BUILT-IN RESISTOR
8
.4 W
BIP General Purpose Small Signal
Matte Tin (Sn) - annealed
MPSA13RLRAG
MPSA13RLRAG by Onsemi is a NPN Darlington transistor with 3 terminals, ideal for amplifier applications. It offers a high DC current gain of 10k and can handle up to 1.5W power dissipation. With a max operating temperature of 150°C and collector-emitter voltage of 30V, it is suitable for various electronic circuits requiring high gain and power handling capabilities.
MPSA13RLRMG
MPSA13RLRMG by Onsemi is a NPN Darlington transistor with a max power dissipation of 1.5W and a min DC current gain of 10,000. It is commonly used as an amplifier in various applications.
MPSA13ZL1G
MPSA13ZL1G by Onsemi is a NPN Darlington transistor with a max power dissipation of 1.5W and a min DC current gain of 10000. It is commonly used as an amplifier in various applications.
MPSA14RLRPG
MPSA14RLRPG by Onsemi is a NPN Darlington BJT with 3 terminals, ideal for amplifier applications. It offers a high DC current gain of 20k and can handle up to 1.5W power dissipation. With a max operating temp of 150 °C and Vce of 30V, it's suitable for various electronic designs requiring high performance in a cylindrical package.
MPSA42RL1G
MPSA42RL1G by Onsemi is a NPN BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for low-power applications, it has a max power dissipation of 1.5W and operates b/w -55°C to 150°C. The through-hole package with tin silver copper finish makes it suitable for various electronic designs.
MPSA42RLRAG
MPSA42RLRAG by Onsemi is a NPN BJT with max. power dissipation of 1.5W, hFE of 40, and VCE of 300V. Ideal for applications requiring high voltage switching in through-hole configurations at up to 150°C operating temperature.
MPSA42RLRFG
MPSA42RLRFG by Onsemi is a NPN BJT with 300V VCEO, 0.5A IC, and 1.5W Ptot. Ideal for low-power applications, it has hFE of 40 and fT of 50MHz. Its through-hole package makes it suitable for various electronic designs.
MPSA42ZL1G
MPSA42ZL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 40, and VCE of 300V. Ideal for applications requiring high collector current (0.5A), it operates up to 150°C and has a transition frequency of 50MHz.
MPSA43G
MPSA43G by Onsemi is a NPN BJT with 200V VCEO, 50MHz fT, and 1.5W Ptot. Ideal for low-power applications, it features hFE of 40 and operates up to 150°C. Commonly used in signal amplification due to its small signal capabilities in through-hole package.
.05 A
200 V
MPSA43RLRAG
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .05 A;
MPSA92RL1G
MPSA92RL1G by Onsemi is a PNP BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for low-power applications requiring high DC current gain and operating temperatures from -55 to 150 °C. Package style: Cylindrical, terminals: Through-hole, suitable for various electronic designs.
MPSA92ZL1G
MPSA92ZL1G by Onsemi is a PNP BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in electronics due to its high DC current gain and low power dissipation of 1.5W. The through-hole package with bottom terminal position makes it easy to integrate into circuit designs.
MPSA93G
MPSA93G by Onsemi is a PNP BJT with 200V VCEO, 0.5A IC, and 1.5W power dissipation. Ideal for low-power applications, it has a min hFE of 25 and operates up to 150 °C. Commonly used in signal amplification circuits due to its high transition frequency of 50MHz.
MPSA93RLRMG
MPSA93RLRMG by Onsemi is a PNP BJT with 200V VCEO, 0.5A IC, and 1.5W power dissipation. Ideal for small signal applications in electronics due to its hFE of 25, fT of 50MHz, and operating temperature up to 150 °C. Package style is cylindrical with through-hole terminals.
MPSW01AG
MPSW01AG by Onsemi is a NPN BJT transistor with 3 terminals, capable of handling up to 1A collector current and 2.5W power dissipation. With a min DC current gain of 50, it operates at temperatures up to 150 °C. Ideal for applications requiring high-speed switching in electronic circuits.
MPSW01G
MPSW01G by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 2.5W, and hFE of 50. Ideal for applications requiring a max collector-emitter voltage of 30V, such as signal amplification in electronic circuits. Package style: cylindrical, terminal finish: Sn/Ag/Cu, and max operating temp: 150°C make it versatile for various projects.
MSC2712YT1G
MSC2712YT1G by Onsemi is a NPN BJT transistor with 120 min hFE, 50 MHz fT, and 150 °C max operating temp. Ideal for amplifier applications due to its 0.2W power dissipation, 0.1A max IC, and 50V max VCE. It comes in a small outline package with Gull Wing terminals for surface mount assembly.
120
MUN2111T3G
MUN2111T3G by Onsemi is a PNP BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This surface mount transistor comes in a small outline package with Gull Wing terminals.
35
.338 W
MUN5134DW1T1G
MUN5134DW1T1G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 80. Ideal for switching applications, it has a max VCE of 50V and IC of 0.1A. The transistor comes in a small outline package with Gull Wing terminals, making it suitable for surface mount designs.
BUILT-IN BIAS RESISTOR RATIO IS 0.47
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
80
R-PDSO-G6
2
6
.15 W
MATTE TIN
2N3904RL1G
2N3904RL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 30, and fT of 300MHz. Ideal for switching applications due to its single configuration and max. collector-emitter voltage of 40V.
.2 A
300 MHz
250 ns
70 ns
2N3904ZL1G
2N3904ZL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 30, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A. Package style: cylindrical, terminal finish: Tin Silver Copper, peak reflow temp: 260°C.
2N3906RL1G
2N3906RL1G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.35W, hFE of 30, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its single configuration and cylindrical package style. Operating temp ranges from -55 °C to 150°C, making it versatile in various environments.
.35 W
250 MHz
300 ns
2N3906ZL1G
2N3906ZL1G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.35W, hFE of 30, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (70ns/300ns) and high transition frequency (250MHz).
2N4124G
2N4124G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 60, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 25V and max. collector current of 0.2A in a cylindrical package shape.
25 V
2N4401RLRMG
2N4401RLRMG by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 250MHz).
.6 A
255 ns
35 ns
2N4403RLG
2N4403RLG by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 200MHz).
200 MHz
2N5087RLRAG
2N5087RLRAG by Onsemi is a PNP BJT with max. power dissipation of 0.35W, hFE of 250, and fT of 40MHz. Ideal for amplifier applications due to its single configuration and max. collector-emitter voltage of 50V.
LOW NOISE
250
40 MHz
2N5088G
2N5088G by Onsemi is a NPN BJT with max. power dissipation of 0.35W, hFE of 350, and max. collector-emitter voltage of 30V. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. operating temp. of 150°C in a cylindrical package with through-hole terminals.
350
2N5088RLRAG
2N5088RLRAG by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 350, and max. collector-emitter voltage of 30V. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. operating temp. of 150 °C in a cylindrical package style.
2N5401RL1G
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .63 W; Maximum Collector Current (IC): .6 A;
150 V
.63 W
2N5401RLRMG
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