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MUN5134DW1T1G

Onsemi

MUN5134DW1T1G by Onsemi

MUN5134DW1T1G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 80. Ideal for switching applications, it has a max VCE of 50V and IC of 0.1A. The transistor comes in a small outline package with Gull Wing terminals, making it suitable for surface mount designs.

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3

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1k+

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Chip Stock

USA . 41,000 parts In-Stock

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Vyrian

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Digiode

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Component Stockers USA

USA . 317,603 parts In-Stock

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$0.280

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AZTECH Wire

Italy . 549 parts In-Stock

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$21.660

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

USA . 7,844 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 4,264 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 1,765 parts In-Stock

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TANS Electronics

Latvia . 947 parts In-Stock

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Overview

Elevate your electronics projects with the MUN5134DW1T1G by Onsemi - a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this PNP transistor offers reliable performance for switching applications. Its compact design and built-in resistor make it ideal for space-constrained projects. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 80, this transistor delivers exceptional power dissipation and efficiency. Upgrade your circuits today with the MUN5134DW1T1G and experience the difference that superior quality and performance can bring to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering versatility in circuit design.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for easier integration into circuits, saves space, and reduces the need for additional external resistors.

Transistor Application: SWITCHING

Designed for switching applications, providing efficient and reliable performance in such scenarios.

Surface Mount: YES

Enables easy mounting on circuit boards, saving time and effort in assembly.

Terminal Form: GULL WING

Facilitates secure soldering on the PCB, ensuring a reliable connection.

Maximum Power Dissipation (Abs): 0.15 W

Indicates the transistor's capability to handle power dissipation, making it suitable for low-power applications.

Minimum DC Current Gain (hFE): 80

Ensures high current gain for efficient amplification in circuits.

Maximum Collector-Emitter Voltage: 50 V

With a high voltage rating, this transistor can handle a range of voltage requirements in circuits.

Maximum Collector Current (IC): 0.1 A

Suitable for applications requiring moderate collector current levels.

Terminal Finish: MATTE TIN

Provides a reliable and corrosion-resistant finish for the terminals, ensuring long-term stability.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures the transistor can withstand the specified reflow soldering process without damage.

Peak Reflow Temperature °C: 260

Indicates the maximum temperature the transistor can withstand during the reflow soldering process, ensuring reliable assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN5134DW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 0.47

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN5134DW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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