Loading...

MPSW01AG

Onsemi

MPSW01AG by Onsemi

MPSW01AG by Onsemi is a NPN BJT transistor with 3 terminals, capable of handling up to 1A collector current and 2.5W power dissipation. With a min DC current gain of 50, it operates at temperatures up to 150 °C. Ideal for applications requiring high-speed switching in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

51,000

-

-

-

-

Vyrian

USA . 6,506 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,506

-

-

-

-

Digiode

USA . 525 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

525

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 384 parts In-Stock

1+ parts

$22.080

100+ parts

-

1k+ parts

-

10k+ parts

-

384

$22.080

-

-

-

Perfect Parts

USA . 19,154 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

19,154

-

-

-

-

Kulean Microsystems

USA . 5,235 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,235

-

-

-

-

Problanco Electronics

Mexico . 2,902 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,902

-

-

-

-

SupplyDigital Components

Austria . 2,117 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,117

-

-

-

-

Corphita

USA . 1,263 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,263

-

-

-

-

UHIMA Technologies

Türkiye . 543 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

543

-

-

-

-

TANS Electronics

Latvia . 327 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

327

-

-

-

-

Corohmni

South Africa . 129 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

129

-

-

-

-

Overview

Discover the Onsemi MPSW01AG, a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted industry leader, this NPN transistor is perfect for a variety of applications. With a maximum power dissipation of 2.5W and a maximum collector-emitter voltage of 40V, the MPSW01AG provides customers with excellent value and benefits. Whether you're designing amplifiers, switches, or other electronic circuits, this transistor's superior quality and performance make it a top choice for your projects. Unlock the potential of your designs with the Onsemi MPSW01AG today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

The NPN polarity type allows for easy compatibility with other NPN components in circuit design, making integration simpler.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, reducing complexity and potential errors.

Package Shape: ROUND

The round package shape is compact and space-efficient, making it suitable for applications where size constraints are a concern.

Maximum Power Dissipation (Abs): 2.5 W

With a maximum power dissipation of 2.5W, this transistor can handle high power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 means that the transistor can amplify current efficiently, providing consistent and accurate signal amplification.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the transistor to withstand extreme heat conditions, making it suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 40 V

With a maximum collector-emitter voltage of 40V, this transistor can handle higher voltage levels, expanding its potential applications.

Transistor Element Material: SILICON

The silicon transistor element material offers high performance, reliability, and compatibility with various circuit configurations.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1A, this transistor can handle high current loads, making it suitable for power amplification applications.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin, silver, and copper provides good conductivity, solderability, and resistance to corrosion, ensuring reliable connections.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C allows for easy soldering and rework processes, making assembly and maintenance convenient.

Nominal Transition Frequency (fT): 50 MHz

With a nominal transition frequency of 50 MHz, this transistor can switch signals at high speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW01AG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-226

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW01AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20