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2N4124G

Onsemi

2N4124G by Onsemi

2N4124G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 60, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 25V and max. collector current of 0.2A in a cylindrical package shape.

Median Price

$0.238

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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Rochester

USA . 63,521 parts In-Stock

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$0.110

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$0.110

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$0.110

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RS (Exports)

UK . 3,137 parts In-Stock

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$0.366

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$0.287

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3,137

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$0.366

$0.287

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Distributors (In-Stock)

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DF Sales Co.

USA . 274 parts In-Stock

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$0.620

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$0.620

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DF Sales Co.

USA . 274 parts In-Stock

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$0.620

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$0.620

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Forefront Electronics and Design

USA . 3 parts In-Stock

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$3.920

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Chip Stock

USA . 48,000 parts In-Stock

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Vyrian

USA . 10,353 parts In-Stock

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Digiode

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Flip Electronics

USA . 500 parts In-Stock

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Bristol Electronics

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Prism Electronics

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Corohmni

South Africa . 490 parts In-Stock

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$0.620

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490

$0.620

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AZTECH Wire

Italy . 452 parts In-Stock

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$21.170

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Component Stockers USA

USA . 472 parts In-Stock

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$99.990

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$99.990

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Native Components

USA . 876 parts In-Stock

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$891.566

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$873.735

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$864.819

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$855.903

876

$891.566

$873.735

$864.819

$855.903

Northwest PG Solutions

USA . 1,158 parts In-Stock

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$980.722

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RC Electronics

USA . 79,783 parts In-Stock

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$0.130

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Perfect Parts

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Kulean Microsystems

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A-Z Elektronik GmbH

Germany . 6,488 parts In-Stock

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TANS Electronics

Latvia . 5,414 parts In-Stock

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Problanco Electronics

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Glotronic Ltd.

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SupplyDigital Components

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Metaverse IC Inc.

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Kepictronics

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UHIMA Technologies

Türkiye . 528 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 453 parts In-Stock

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Corphita

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Overview

Upgrade your electronic projects with the reliable 2N4124G by Onsemi, a top-tier manufacturer known for superior quality and cutting-edge technology. This NPN small signal bipolar junction transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 25V and a minimum DC current gain of 60. With a compact cylindrical package design and through-hole terminals, this transistor is easy to integrate into your circuits. Trust in Onsemi's expertise and choose the 2N4124G for enhanced performance and efficiency in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching purposes, offering flexibility in circuit design.

Configuration: SINGLE

Simplifies circuit design and enhances reliability by focusing on a single transistor in the package.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient operation in on/off scenarios.

Maximum Power Dissipation (Abs): 0.35 W

Capable of handling power dissipation up to 0.35W, making it suitable for moderate-power applications.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures stable and reliable amplification in various circuit configurations.

Maximum Collector-Emitter Voltage: 25 V

With a maximum voltage rating of 25V, this transistor can be used in a wide range of voltage applications.

Maximum Collector Current (IC): 0.2 A

Capable of handling collector currents up to 0.2A, suitable for low to moderate current applications.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency of 300 MHz enables fast switching speeds, crucial for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N4124G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4124G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-422-3466, 5961004223466

NIIN

004223466

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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