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2N4401RLRMG

Onsemi

2N4401RLRMG by Onsemi

2N4401RLRMG by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 250MHz).

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1k+

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Native Components

USA . 330 parts In-Stock

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AZTECH Wire

Italy . 1,199 parts In-Stock

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Kulean Microsystems

USA . 6,279 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

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Corphita

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TANS Electronics

Latvia . 1,448 parts In-Stock

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UHIMA Technologies

Türkiye . 472 parts In-Stock

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Corohmni

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GreenTree Electronics

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Northwest PG Solutions

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Overview

Discover the power of the 2N4401RLRMG by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that is perfect for various applications such as switching. Manufactured by Onsemi, this NPN transistor offers reliable performance, with a maximum collector-emitter voltage of 40V and a peak reflow temperature of 260 °C. Its single configuration and through-hole terminal form make it easy to use in a wide range of projects. Trust in Onsemi's reputation for excellence and unlock the potential of your next electronics design with the 2N4401RLRMG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier and switching circuits, providing reliable performance.

Configuration: SINGLE

A single configuration simplifies the design and usage of the transistor in various applications.

Transistor Application: SWITCHING

Switching transistors are designed for fast switching applications, ensuring efficient performance.

Package Shape: ROUND

The round shape of the package allows for easy mounting and installation in circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering during assembly.

No. of Terminals: 3

Having 3 terminals allows for versatile connections and configurations in circuit designs.

Maximum Power Dissipation (Abs): 1.5 W

With a high power dissipation capability, this transistor can handle high power loads without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and space-saving, ideal for small electronic devices.

Minimum DC Current Gain (hFE): 40

A high DC current gain ensures amplification and signal control with minimal input power.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 40 V

With a high collector-emitter voltage rating, this transistor can handle higher voltage loads in circuits.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability, low noise, and high performance in electronic circuits.

Maximum Turn On Time (ton): 35 ns

Fast turn-on time allows for quick switching and response in electronic circuits.

Maximum Collector Current (IC): 0.6 A

High collector current rating allows for handling higher current loads in switching applications.

Maximum Turn Off Time (toff): 255 ns

Fast turn-off time ensures efficient switching and control in electronic circuits.

Terminal Finish: TIN SILVER COPPER

Tin, silver, and copper terminal finish provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and soldering on PCBs or other electronic devices.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures secure soldering during assembly and rework processes.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for fast signal processing and switching in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N4401RLRMG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

255 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

2N4401RLRMG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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