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2N4403RLG

Onsemi

2N4403RLG by Onsemi

2N4403RLG by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 200MHz).

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,369 parts In-Stock

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Digiode

USA . 725 parts In-Stock

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725

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AZTECH Wire

Italy . 299 parts In-Stock

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$17.820

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299

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Kulean Microsystems

USA . 8,124 parts In-Stock

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Problanco Electronics

Mexico . 7,465 parts In-Stock

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TANS Electronics

Latvia . 6,834 parts In-Stock

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SupplyDigital Components

Austria . 4,618 parts In-Stock

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Corphita

USA . 1,744 parts In-Stock

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Northwest PG Solutions

USA . 1,236 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 177 parts In-Stock

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Corohmni

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Overview

Looking for a high-quality Small Signal Bipolar Junction Transistor? Look no further than the Onsemi 2N4403RLG. With a reputation for excellence, Onsemi delivers top-of-the-line products like this PNP transistor designed for switching applications. Its efficient performance, reliable operation, and easy installation make it a standout choice for engineers and hobbyists alike. Trust Onsemi to provide you with the best in semiconductor technology - choose the 2N4403RLG for all your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Having a PNP polarity allows for flexibility in circuit design and compatibility with different components.

Configuration: SINGLE

Simplified design and ease of use for straightforward switching applications.

Transistor Application: SWITCHING

Optimized for efficient switching operations, making it a reliable choice for such applications.

Maximum Power Dissipation (Abs): 1.5 W

Capable of handling moderate power levels without overheating, ensuring reliable performance.

Maximum Collector-Emitter Voltage: 40 V

Suitable for low to moderate voltage applications, providing a wide range of potential uses.

Minimum DC Current Gain (hFE): 100

High DC current gain allows for amplification in circuits and ensures signal integrity.

Maximum Operating Temperature: 150 °C

Operates effectively even in high-temperature environments, enhancing reliability.

Maximum Collector Current (IC): 0.6 A

Able to handle moderate current levels, making it suitable for various circuit configurations.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for fast and efficient switching operation, improving overall performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N4403RLG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

255 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

2N4403RLG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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