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MSC2712YT1G

Onsemi

MSC2712YT1G by Onsemi

MSC2712YT1G by Onsemi is a NPN BJT transistor with 120 min hFE, 50 MHz fT, and 150 °C max operating temp. Ideal for amplifier applications due to its 0.2W power dissipation, 0.1A max IC, and 50V max VCE. It comes in a small outline package with Gull Wing terminals for surface mount assembly.

Median Price

$0.034

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 975,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

975,000

-

$0.030

$0.025

$0.023

Verical

USA . 864,000 parts In-Stock

1+ parts

-

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$0.038

864,000

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-

-

$0.038

Distributors (In-Stock)

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Digiode

USA . 1,532 parts In-Stock

1+ parts

$0.024

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1,532

$0.024

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Chip Stock

USA . 25,000 parts In-Stock

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25,000

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Vyrian

USA . 10,432 parts In-Stock

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10,432

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Distributors (Availability)

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Corphita

USA . 1,471 parts In-Stock

1+ parts

$0.022

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-

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1,471

$0.022

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Corohmni

South Africa . 392 parts In-Stock

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$0.025

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392

$0.025

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AZTECH Wire

Italy . 603 parts In-Stock

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$15.880

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603

$15.880

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Continental Prestige Electronics

USA . 975,000 parts In-Stock

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$0.020

975,000

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$0.020

ChipstoGo Electronic ltd

UK . 159,000 parts In-Stock

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159,000

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Kepictronics

USA . 39,000 parts In-Stock

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39,000

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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22,000

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SupplyDigital Components

Austria . 8,133 parts In-Stock

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Problanco Electronics

Mexico . 7,728 parts In-Stock

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7,728

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TANS Electronics

Latvia . 6,669 parts In-Stock

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6,669

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A-Z Elektronik GmbH

Germany . 6,228 parts In-Stock

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6,228

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Kulean Microsystems

USA . 1,867 parts In-Stock

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1,867

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UHIMA Technologies

Türkiye . 43 parts In-Stock

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43

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Overview

Unleash the power of innovation with the MSC2712YT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors (BJT) that are perfect for applications such as amplifiers. With a focus on performance and reliability, this NPN transistor offers customers unmatched value and benefits. Say goodbye to limitations and hello to endless possibilities with the MSC2712YT1G. Trust Onsemi to provide you with the tools you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material is durable and resistant to damage, making it ideal for long-lasting use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Single configuration makes it easy to use in simple circuits without the need for complex setups.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in such circuits.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards, saving space and simplifying the assembly process.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels without overheating.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle a wide range of voltage levels in various applications.

Minimum DC Current Gain (hFE): 120

A minimum DC current gain of 120 ensures reliable amplification and signal processing.

Maximum Operating Temperature: 150 °C

Can operate at temperatures up to 150 °C, making it suitable for a wide range of environments and applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels in amplifier circuits.

Nominal Transition Frequency (fT): 50 MHz

A high nominal transition frequency of 50MHz ensures reliable signal processing and amplification in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSC2712YT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MSC2712YT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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