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MSC2712GT1

Onsemi

MSC2712GT1 by Onsemi

The Onsemi MSC2712GT1 is a NPN BJT transistor with 3 terminals, suitable for amplifier applications. It has a max power dissipation of 0.2W, hFE of 200, and operates at up to 150 °C. Ideal for surface mount designs due to its small outline package style.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,190,800 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

1,190,800

-

$0.030

$0.025

$0.023

DigiKey

USA . 1,190,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.030

1,190,800

-

-

-

$0.030

Verical

USA . 1,035,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.038

1,035,000

-

-

-

$0.038

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,035 parts In-Stock

1+ parts

$0.024

100+ parts

-

1k+ parts

-

10k+ parts

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1,035

$0.024

-

-

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Vyrian

USA . 448 parts In-Stock

1+ parts

$0.025

100+ parts

-

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448

$0.025

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Chip Stock

USA . 34,000 parts In-Stock

1+ parts

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34,000

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R&J Components

USA . 6,000 parts In-Stock

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6,000

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Semi Source

USA . 2,990 parts In-Stock

1+ parts

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2,990

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 486 parts In-Stock

1+ parts

$0.022

100+ parts

-

1k+ parts

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486

$0.022

-

-

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Corohmni

South Africa . 496 parts In-Stock

1+ parts

$0.025

100+ parts

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496

$0.025

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Component Stockers USA

USA . 1,028,850 parts In-Stock

1+ parts

$0.030

100+ parts

$0.020

1k+ parts

$0.020

10k+ parts

$0.020

1,028,850

$0.030

$0.020

$0.020

$0.020

Continental Prestige Electronics

USA . 1,190,800 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

$0.020

1,190,800

-

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-

$0.020

Authorized Procurement Solutions

USA . 25,000 parts In-Stock

1+ parts

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25,000

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A-Z Elektronik GmbH

Germany . 7,091 parts In-Stock

1+ parts

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7,091

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TANS Electronics

Latvia . 5,135 parts In-Stock

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5,135

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Kulean Microsystems

USA . 4,110 parts In-Stock

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4,110

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Problanco Electronics

Mexico . 3,092 parts In-Stock

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3,092

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ChipstoGo Electronic ltd

UK . 1,970 parts In-Stock

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1,970

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SupplyDigital Components

Austria . 1,592 parts In-Stock

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1,592

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UHIMA Technologies

Türkiye . 97 parts In-Stock

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97

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Overview

Upgrade your electronic projects with the MSC2712GT1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor perfect for amplifier applications. Manufactured by Onsemi, known for their reliable and efficient components, this NPN transistor offers high DC current gain and a maximum collector-emitter voltage of 50V. With a compact rectangular shape and surface mount capability, the MSC2712GT1 is versatile and easy to integrate into your designs. Trust Onsemi for superior performance and dependability in all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection, making the transistor durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are easy to work with in a variety of applications.

Configuration: SINGLE

Simpler configuration allows for easier integration into circuits and reduces complexity.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, making it efficient and effective in audio or signal processing applications.

Surface Mount: YES

Surface mount technology allows for easy and compact placement on circuit boards, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on circuit boards and easier alignment during assembly.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and are suitable for surface mount applications.

Maximum Power Dissipation (Abs): 0.2 W

With a relatively high power dissipation value, this transistor can handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Compact package style saves space on circuit boards and allows for dense placement of components.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures efficient signal amplification and improved performance in amplification circuits.

Maximum Operating Temperature: 150 °C

Ability to operate at high temperatures makes this transistor suitable for a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage rating, this transistor can handle a wide range of voltage levels in amplification circuits.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and reliability compared to other materials.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels, making it suitable for a variety of amplification applications.

Terminal Finish: TIN LEAD

Tin-lead terminal finish provides good solderability and conductivity for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and easy connections in various configurations.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency enables fast switching speeds and high-frequency operation in amplification circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSC2712GT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MSC2712GT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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