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MSC2712GT1G

Onsemi

MSC2712GT1G by Onsemi

MSC2712GT1G by Onsemi is a NPN BJT transistor with 200 min hFE, 50 MHz fT, and 150°C max operating temp. Ideal for amplifier applications, it features a small outline package with GULL WING terminals for surface mount assembly.

Median Price

$0.108

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 20,758 parts In-Stock

1+ parts

$0.240

100+ parts

$0.092

1k+ parts

$0.060

10k+ parts

$0.044

20,758

$0.240

$0.092

$0.060

$0.044

DigiKey

USA . 2,906 parts In-Stock

1+ parts

$0.240

100+ parts

$0.092

1k+ parts

$0.059

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-

2,906

$0.240

$0.092

$0.059

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Rochester

USA . 693,106 parts In-Stock

1+ parts

-

100+ parts

$0.034

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$0.029

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$0.025

693,106

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$0.034

$0.029

$0.025

Verical

USA . 435,000 parts In-Stock

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Arrow

USA . 12,000 parts In-Stock

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$0.025

12,000

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$0.025

Chip1Stop

Japan . 3,000 parts In-Stock

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$0.033

3,000

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$0.033

RS (Exports)

UK . 2,050 parts In-Stock

1+ parts

-

100+ parts

$0.181

1k+ parts

$0.176

10k+ parts

$0.168

2,050

-

$0.181

$0.176

$0.168

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 931 parts In-Stock

1+ parts

$0.026

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-

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931

$0.026

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Digiode

USA . 192 parts In-Stock

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$0.027

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192

$0.027

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Flip Electronics

USA . 51,000 parts In-Stock

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51,000

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Chip Stock

USA . 31,000 parts In-Stock

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PC Components Company LLC

USA . 7,500 parts In-Stock

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7,500

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Inventory MP

USA . 5,896 parts In-Stock

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5,896

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Bristol Electronics

USA . 5,896 parts In-Stock

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5,896

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Semi Source

USA . 3,150 parts In-Stock

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3,150

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Semtec, LLC

USA . 20 parts In-Stock

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20

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ACDS - Activité Composants Distribution Service

France . 10 parts In-Stock

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10

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Distributors (Availability)

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Corohmni

South Africa . 263 parts In-Stock

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$0.018

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263

$0.018

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Corphita

USA . 1,078 parts In-Stock

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$0.025

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1,078

$0.025

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Continental Prestige Electronics

USA . 718,891 parts In-Stock

1+ parts

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$0.021

718,891

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$0.021

Perfect Parts

USA . 53,573 parts In-Stock

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53,573

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Kepictronics

USA . 50,700 parts In-Stock

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Lixinc

USA . 17,106 parts In-Stock

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TANS Electronics

Latvia . 8,149 parts In-Stock

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SupplyDigital Components

Austria . 3,052 parts In-Stock

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Kulean Microsystems

USA . 2,941 parts In-Stock

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Problanco Electronics

Mexico . 2,808 parts In-Stock

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XScomponents

USA . 2,760 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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2,700

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UHIMA Technologies

Türkiye . 455 parts In-Stock

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455

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ChipstoGo Electronic ltd

UK . 30 parts In-Stock

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Authorized Procurement Solutions

USA . 10 parts In-Stock

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10

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Overview

Enhance your electronic designs with the MSC2712GT1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this NPN transistor offers exceptional performance and reliability for amplifier applications. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 200, this transistor ensures efficient power dissipation and optimal signal amplification. Trust Onsemi's expertise in semiconductor manufacturing to deliver cutting-edge solutions for your projects, providing unparalleled value and benefits to customers seeking high-performance components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical strength and reliability for a small signal BJT.

Polarity or Channel Type: NPN

Ideal for use in low power amplification circuits.

Configuration: SINGLE

Simplifies circuit design and layout.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications.

Surface Mount: YES

Easy to mount on PCBs for automated assembly.

Package Shape: RECTANGULAR

Allows for efficient use of space on the PCB.

Terminal Form: GULL WING

Facilitates easy soldering and electrical connections.

No. of Terminals: 3

Simplifies connection in the circuit.

Maximum Power Dissipation (Abs): 0.2 W

Can handle moderate power dissipation for its size.

Package Style (Meter): SMALL OUTLINE

Compact package size for space-constrained applications.

Minimum DC Current Gain (hFE): 200

High gain allows for greater amplification in circuits.

Maximum Operating Temperature: 150 °C

Can operate efficiently in a wide range of temperatures.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low voltage applications.

Transistor Element Material: SILICON

Highly reliable material for semiconductor devices.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate collector currents.

Terminal Finish: MATTE TIN

Provides good solderability and corrosion resistance.

Terminal Position: DUAL

Allows for flexibility in circuit design and layout.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during assembly.

Peak Reflow Temperature °C: 260

High temperature resistance for soldering processes.

Nominal Transition Frequency (fT): 50 MHz

Suitable for high frequency applications in amplifiers.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSC2712GT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MSC2712GT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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